• Korean Journal of Materials Research
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• 제10권11호
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• pp.749-764
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• 2000

Amorphous TaSiN thin films of about 90 nm thick were deposited onto poly-Si and $SiO_2/Si$ substrates by rf magnetron sputtering method. TaSiN films exhibited amorphous phase with no crystllization up to $900^{\circ}C$ in oxygen ambient. The penetration depth of oxygen diffusion increased with increasing annealing temperature in oxygen ambient and reached 20 nm deep in a $Ta_{23}Si_{29}N_{48}$ layer at $600^{\circ}C$ for 30min. The resistivity of as-deposited $Ta_{23}Si_{29}N_{48}$ thin films was about $1,300{\mu}{\Omega}-cm$, however those of annealed films markedly increased above $700^{\circ}C$ in oxygen ambient as the annealing temperature increased.

• Journal of the Korean Ceramic Society
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• 제45권5호
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• pp.285-289
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• 2008

Porous self-bonded silicon carbide (SiC) ceramics were fabricated at temperatures ranging from 1750 to $1850^{\circ}C$ using SiC, silicon (Si), and carbon (C) powders as starting materials. The effect of the Si:C ratio on porosity and strength was investigated as a function of sintering temperature. It was possible to produce self-bonded SiC ceramics with porosities ranging from 36% to 43%. The porous ceramics showed a maximal porosity when the Si:C ratio was 2:1 regardless of the sintering temperature. In contrast, the maximum strength was obtained when the ratio was 5:1.

• Korean Journal of Materials Research
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• 제23권12호
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• pp.702-707
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• 2013

High-quality ${\beta}$-silicon carbide (SiC) coatings are expected to prevent the oxidation degradation of carbon fibers in carbon fiber/silicon carbide (C/SiC) composites at high temperature. Uniform and dense ${\beta}$-SiC coatings were deposited on carbon fibers by low-pressure chemical vapor deposition (LP-CVD) using silane ($SiH_4$) and acetylene ($C_2H_2$) as source gases which were carried by hydrogen gas. SiC coating layers with nanometer scale microstructures were obtained by optimization of the processing parameters considering deposition mechanisms. The thickness and morphology of ${\beta}$-SiC coatings can be controlled by adjustment of the amount of source gas flow, the mean velocity of the gas flow, and deposition time. XRD and FE-SEM analyses showed that dense and crack-free ${\beta}$-SiC coating layers are crystallized in ${\beta}$-SiC structure with a thickness of around 2 micrometers depending on the processing parameters. The fine and dense microstructures with micrometer level thickness of the SiC coating layers are anticipated to effectively protect carbon fibers against the oxidation at high-temperatures.

• Journal of the Korean Ceramic Society
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• 제51권5호
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• pp.392-398
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• 2014

$Al_2O_3$-SiC composites reinforced with SiC whisker ($SiC_w$) were fabricated using three different methods. In the first, $Al_2O_3-SiC_w$ starting materials were used. In the second, $Al_2O_3-SiC_w$-SiC particles ($SiC_p$) were used, which was intended to enhance the mechanical properties by $SiC_p$ reinforcement. In the third method, reaction-sintering was used with mullite-Al-C-$SiC_w$ starting materials. After hot-pressing at $1750^{\circ}C$ and 30 MPa for 1 h, the composites fabricated using $Al_2O_3-SiC_w$ and $Al_2O_3-SiC_w-SiC_p$ showed strong mechanical properties, by which the effects of reinforcement by $SiC_w$ and $SiC_p$ were confirmed. On the other hand, the mechanical properties of the composite fabricated by reaction-sintering were found to be inferior to those of the other $Al_2O_3$-SiC composites owing to its relatively lower density and the presence of ${\gamma}-Al_2O_3$ and ${\gamma}-Al_{2.67}O_4$. The greatest hardness and $K_{1C}$ were 20.37 GPa for the composite fabricated using $Al_2O_3-SiC_w$, and $4.9MPa{\cdot}m^{1/2}$ using $Al_2O_3-SiC_w-SiC_p$, respectively, which were much improved over those from the monolithic $Al_2O_3$.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.98-98
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• 1998

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제25권2호
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• pp.91-95
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• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

• Journal of Ocean Engineering and Technology
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• 제22권4호
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• pp.59-64
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• 2008

The mechanical properties of liquid phase sintered (LPS) SiC materials, with the addition of oxide powder, were investigated, in conjunction with a detailed analysis of their microstructures. LPS-SiC materials were fabricated at a temperature of 1820 $^{\circ}C$ under an argon atmosphere, using three different starting sizes of SiC particles. The sintering additive for the fabrication of the LPS-SiC materials was an $Al_2O_3-Y_2O_3$ mixture with a constant composition ratio ($Al_2O_3/Y_2O_3$: 1.5). The particle sizes of the commercial SiC powderswere 30 nm, 0.3 $\mu$m, and 3.0 $\mu$m. The flexural strength of the LPS-SiC materials was also examined at elevated temperatures. A decrease in the starting size of the SiC particles led to an increase in the flexural strength of the LPS-SiC materials, accompanying a highly dense morphology with the creation of a secondary phase. Such a secondary phase was identified as $Y_3Al_2(AlO_4)2$. The flexural strength of the LPS-SiC materials greatly decreased with an increase in the test temperature, due to the creation of a large amount of pores.

• Composites Research
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• 제33권5호
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• pp.247-250
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• 2020

In this study, the possibility of manufacturing a magnesium (Mg) composites reinforced with continuous silicon carbide (SiC) fibers was examined using a liquid pressing process. We fabricated uniformly dispersed SiC fiberAZ91 composites using a liquid phase pressing process. Furthermore, the precipitates were controlled through heat treatment. As a continuous Mg₂Si phase was formed at the interface between the SiC fiber and the AZ91 matrix alloy, the interfacial bonding strength was improved. The tensile strength at room temperature of the prepared composite was 479 MPa, showing excellent mechanical properties.

• Journal of Adhesion and Interface
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• 제14권2호
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• pp.75-81
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• 2013

Epoxy matrix based composites were fabricated by adding SiC nano fillers. The interfacial properties of composites were varied with different shapes of SiC nano fillers. To investigate the shape effects on the interfacial properties, beta and whisker type SiC nano fillers were used for this evaluation. The dispersion states of nano SiC-epoxy nanocomposites were evaluated by capacitance measurements. FE-SEM was used to observe the fracture surface of different structures of SiC-epoxy nanocomposites and to investigate for reinforcement effect. Interfacial properties between carbon fiber and SiC-epoxy nanocomposites were also evaluated by ILSS (interlaminar shear strength) and IFSS (interfacial shear strength) tests. The interfacial adhesion of beta type nanocomposites was better than whisker type.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제24권10호
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• pp.799-802
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• 2011

In this study, SiC single-crystal ingots were prepared on two seed crystals with different doping level by using the physical vapor transport (PVT) technique; then, SiC crystal wafers sliced from the grown SiC ingot were systematically investigated to find the effect of seed doping level on the doping concentration and crystal quality of the SiC. To exclude extra effects induced by adjustment of the process parameters, we simultaneously grew the SiC crystals on two seed crystals with different level, which were fabricated from previous two SiC crystal ingots.