• Title/Summary/Keyword: SiC IGBT

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Prototype Development of 3-Phase 3.3kV/220V 6kVA Modular Semiconductor Transformer (3상 3.3kV/220V 6kVA 모듈형 반도체 변압기의 프로토타입 개발)

  • Kim, Jae-Hyuk;Kim, Do-Hyun;Lee, Byung-Kwon;Han, Byung-Moon;Lee, Jun-Young;Choi, Nam-Sup
    • The Transactions of The Korean Institute of Electrical Engineers
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    • 제62권12호
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    • pp.1678-1687
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    • 2013
  • This paper describes a prototype of 3-phase 3.3kV/220V 6kVA modular semiconductor transformer developed in the lab for feasibility study. The developed prototype is composed of three single-phase units coupled in Y-connection. Each single-phase unit with a rating of 1.9kV/127V 2kVA consists of a high-voltage high-frequency resonant AC-DC converter, a low-voltage hybrid-switching DC-DC converter, and a low-voltage hybrid-switching DC-AC converter. Also each single-phase unit has two DSP controllers to control converter operation and to acquire monitoring data. Monitoring system was developed based on LabView by using CAN communication link between the DSP controller and PC. Through various experimental analyses it was verified that the prototype operates with proper performance under normal and sag condition. The system efficiency can be improved by adopting optimal design and replacing the IGBT switch with the SiC MOSFET switch. The developed prototype confirms a possibility to build a commercial high-voltage high-power semiconductor transformer by increasing the number of series-connected converter modules in high-voltage side and improving the performance of switching element.