• 한국정보전자통신기술학회논문지
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• 제12권5호
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• pp.499-506
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• 2019

본 논문은 SiC Hybrid module를 적용한 7kW 인버터의 동작 안정성에 관한 것으로 손실 방정식과 시뮬레이션 결과를 비교하여 시뮬레이션 결과의 유효성을 검증하였으며, 시뮬레이션을 통해 Si module과 SiC Hybrid module의 스위치 손실과 다이오드 손실을 비교하였다. 손실 방정식 계산을 통하여 SiC Hybrid module의 도통 손실은 168W, 스위칭 손실은 9.3W, 다이오드 손실은 10.5nW의 결과를 나타내었으며, 시뮬레이션 결과와 비교하였을 때 유사한 값을 나타내었다. 이를 바탕으로 Si module과 SiC Hybrid module의 시뮬레이션 결과 값 비교 결과, Si module의 총 소자 손실값은 246.2W, SiC Hybrid module의 총 소자 손실 값은 189.9W를 나타내었으며, 손실 차이 값은 56.3W로써 약 0.8W의 효율 차이를 보였다. 이로 인하여 SiC SBD의 Reverse recovery 특성을 검증하였다. 또한 고온 포화상태에서 SiC Hybrid module 및 Si module의 안정성을 확인하기 위하여 온도 포화 테스트를 진행하였으며, Si module의 경우, 출력전력 4kW에서 동작을 멈추었고, SiC Hybrid module은 7kW까지 동작을 확인하였다. 이를 바탕으로, 효율 그래프와 온도 그래프를 제시하였으며, Si module은 4kW까지, SiC Hybrid module은 7kW까지 그래프로 나타내었다.

• Journal of Power Electronics
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• 제13권4호
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• pp.584-591
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• 2013

In this paper, a hybrid booster power module with Si IGBT and Silicon Carbide (SiC) Schottky Barrier Diode (SBDs) is presented. The switching characteristics of the hybrid booster module are compared with commercial Silicon IGBT/Si PIN diode based modules. We applied the booster power module into a non-isolated on board vehicle charger with a simple buck-booster topology. The performances of the on-vehicle charger are analyzed and measured with different power modules. The test data is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4 % with the SiC SBD based hybrid booster module. The conversion efficiency gain of 1.4 % is realizable by replacing the Si-based booster module with the Si IGBT/SiC SBD hybrid boost module in the 6.6 kW on-vehicle chargers.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2018년도 전력전자학술대회
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• pp.536-538
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• 2018

This paper introduces an enhanced interleaved (IL) PFC (Power Factor Correction) boost converter typed 650V Intelligent Power Module (IPM), which is fully optimized hybrid IGBT converter modules; Silicon (Si) IGBT and Silicon Carbide (SiC) diode, for up to 10kW HVAC (Heating, Ventilation, and Air Conditioning) systems. It utilizes newly developed $4^{th}$ Generation Field Stop (FS) trench IGBTs, $EXTREMEFAST^{TM}$ anti-paralleled diodes, SiC Junction Barrier Schottky (JBS) diodes, Bridge rectifiers, Multi-function LVIC, and Built-in thermistor provide good reliable characteristics for the entire system. This module also takes technical advantage of DBC (Direct Bonded Copper) substrate for the better thermal performance. It is shown that the Si IGBT/SiC diode hybrid IL PFC module can achieve excellent EMI performance and greatly enhance the power handling capability or switching frequency of various applications compared to the Si IGBT/Diode. This paper provides an overall description of the newly developed 650V/50A Hybrid SiC IL PFC IPM product.

• 전력전자학회논문지
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• 제22권4호
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• pp.360-368
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• 2017

This paper proposes the 80-kW high-efficiency bidirectional hybrid SiC boost/buck converter using droop control for DC nano-grid. The proposed converter consists of four 20-kW modules to achieve fault tolerance, ease of thermal management, and reduced component stress. Each module is constructed as a cascaded structure of the two basic bi-directional converters, namely, interleaved boost and buck converters. A six-pack hybrid SiC intelligent power module (IPM) suitable for the proposed cascaded structure is adopted for high-efficiency and compactness. The proposed converter with hybrid switching method reduces the switching loss by minimizing switching of insulated gate bipolar transistor (IGBT). Each module control achieves smooth transfer from buck to boost operation and vice versa, since current controller switchover is not necessary. Furthermore, the proposed parallel control using DC droop with secondary control, enhances the current sharing accuracy while well regulating the DC bus voltage. A 20-kW prototype of the proposed converter has been developed and verified with experiments and indicates a 99.3% maximum efficiency and 98.8% rated efficiency.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2019년도 추계학술대회
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• pp.190-191
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• 2019

최근 신재생 에너지와 ESS와 같은 분산 전원의 사용이 점차 늘어나면서, 이들을 제어하는 전력 변환 장치에 대한 기대치는 점점 상승하고 있다. 특히 DC 1500V에 대한 요구 및 고 효율, 고 전력밀도에 대한 요구는 최근 Wide band gap 소자의 발전과 함께 산업계 전반에 주요한 이슈이다. 본 논문은 이러한 요구를 만족하기 위한 Hybrid ANPC의 설계를 논하도록 한다. 구성의 정합성을 확인하기 위해, 손실 분석이 진행될 것이며, 최근 SiC 모듈의 발전 방향인 Press-fit type의 설계에 맞춰 Power PCB 설계를 위한 모의 실험을 진행한다.

• 마이크로전자및패키징학회지
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• 제21권4호
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• pp.1-13
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• 2014

The paper gives an overview of the concepts, basic requirements, and trends regarding packaging technologies of power modules in hybrid (HEV) and electric vehicles (EV). Power electronics is gaining more and more importance in the automotive sector due to the slow but steady progress of introducing partially or even fully electric powered vehicles. The demands for power electronic devices and systems are manifold, and concerns besides aspects such as energy efficiency, cooling and costs especially robustness and lifetime issues. Higher operation temperatures and the current density increase of new IGBT (Insulated Gate Bipolar Transistor) generations make it more and more complicated to meet the quality requirements for power electronic modules. Especially the increasing heat dissipation inside the silicon (Si) leads to maximum operation temperatures of nearly $200^{\circ}C$. As a result new packaging technologies are needed to face the demands of power modules in the future. Wide-band gap (WBG) semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of power electronic systems in EVs due to their improved electrical and thermal properties in comparison to Si based solutions. In this paper, we will introduce various package materials, advanced packaging technologies, heat dissipation and thermal management of advanced power modules with extended reliability for EV applications. In addition, SiC and GaN based WBG power modules will be introduced.

• Journal of Microbiology and Biotechnology
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• 제18권3호
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• pp.427-433
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• 2008

The cephabacins produced by Lysobacter lactamgenus are ${\beta}$-lactam antibiotics composed of a cephem nucleus, an acetate residue, and an oligopeptide side chain. In order to understand the precise implication of the polyketide synthase (PKS) module in the biosynthesis of cephabacin, the genes for its core domains, ${\beta}$-ketoacyl synthase (KS), acyltransferase (AT), and acyl carrier protein (ACP), were amplified and cloned into the pET-32b(+) expression vector. The sfp gene encoding a protein that can modify apo-ACP to its active holo-form was also amplified. The recombinant KS, AT, apo-ACP, and Sfp overproduced in the form of $His_6$-tagged fusion proteins in E. coli BL21(DE3) were purified by nickel-affinity chromatography. Formation of stable peptidyl-S-KS was observed by in vitro acylation of the KS domain with the substrate [L-Ala-L-Ala-L-Ala-L-$^3H$-Arg] tetrapeptide-S-N-acetylcysteamine, which is the evidence for the selective recognition of tetrapeptide produced by nonribosomal peptide synthetase (NRPS) in the NRPS/PKS hybrid. In order to confirm whether malonyl CoA is the extender unit for acetylation of the peptidyl moiety, the AT domain, ACP domain, and Sfp protein were treated with $^{14}C$-malonyl-CoA. The results clearly show that the AT domain is able to recognize the extender unit and decarboxylatively acetylated for the elongation of the tetrapeptide. However, the transfer of the activated acetyl group to the ACP domain was not observed, probably attributed to the improper capability of Sfp to activate apo-ACP to the holo-ACP form.