• Resources Recycling
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• v.26 no.1
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• pp.16-21
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• 2017

This paper relates to the synthesis of a source powder for SiC crystal growth. ${\beta}-SiC$ powders are synthesized at high temperatures (>$1400^{\circ}C$) by a reaction between silicon powder and carbon powder. The reaction is carried out in a graphite crucible operating in a vacuum ambient (or Ar gas) over a period of time sufficient to cause the Si+C mixture to react and form poly-crystalline SiC powder. End-product characterizations are pursued with X-ray diffraction analysis, SEM/EDS, particle size analyzer and ICP-OES. The purity of the end-product was analyzed with the Korean Standard KS L 1612.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.7
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• pp.988-991
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• 2012

The computer simulation was performed to confirm distribution of current and power density according to inner diameter of graphite mold of SPS(Spark Plasma Sintering). When the inner diameters of a graphite mold are varied $10mm{\Phi}$, $20mm{\Phi}$, $30mm{\Phi}$ and $40mm{\Phi}$, the more the inner diameter of graphite mold is decreased, the more the current density of punch section is increased. Because the electrical resistivity of the SiC-$ZrB_2$ specimen section($7.77{\times}10^{-4}{\Omega}{\cdot}cm$) was lower than the electrical resistivity($6.00{\times}10^{-3}{\Omega}{\cdot}cm$) of graphite section, the current density and power density of specimen section was higher than those of graphite section. It is considered that a SiC-$ZrB_2$ composite is sintered by more Joule heat of specimen section than that of mold and punch section. The current and power density distribution of a SiC-$ZrB_2$ composite can be predicted through computer simulation when SPS is conducted, and an electrical resistivity of the SiC-$ZrB_2$ composite is main element of SPS.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.120-125
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• 2002

Si-wafers for solar cells were cast in a size of $50{\times}46{\times}0.5{\textrm}{mm}^3$ by vacuum casting method. The graphite mold coated by BN powder, which was to prevent the reaction of carbon with the molten silicon, was used. Without coating, the wetting and reaction of Si melt to graphite mold was very severe. In the case of BN coating, SiC was formed in the shape of tiny islands at the surface of Si wafer by the reaction between Si-melt and carbon of the graphite mold on the high temperature. The grain size was about 1 mm. The efficiency of Si solar cell was lower than that of Si solar cell fabricated on commercial single and poly crystalline Si wafer. The reason of low efficiency was discussed.

• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.293-299
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• 2020

The characteristics of the polycarbosilane (PCS)-based composite ceramic layer was studied by controlling the curing temperature. The stress at the interface of the graphite and SiOC composite layer was evaluated v ia finite element analysis. As a result, the tensile stress was released as the carbon ratio of the SiC decreases. In experiment, the SiOC layers were coated on the VDR graphite block by dip-coating process. It was revealed that the composition of Si and C was effectively adjusted depending on the curing temperature. As the solution-based process is employed, the surface roughness was reduced for the appropriate PCS curing temperature. Hence, it is expected that the cured SiOC layer can be utilized to reduce cracking and peeling of SiC ceramic composites on graphite mold by improving the interfacial stress and surface roughness.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.419-428
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• 1995

Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{\circ}C$ and mass-transport controlled over 125$0^{\circ}C$. Apparent activation energy value decreased below 120$0^{\circ}C$ and deposition rate decreased above 125$0^{\circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $\beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.

• Carbon letters
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• v.8 no.2
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• pp.91-94
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• 2007

The application of Carbon and graphite based materials in unprotected environment is limited to a temperature of $450^{\circ}C$ or so because of their susceptibility to oxidation at this temperature and higher. To over come these obstacles a low cost chemical vapour reaction process (CVR) was developed to give crystalline and high purity SiC coating on graphite and isotropic C/C composite. CVR is most effective carbothermal reduction method for conversation of a few micron of carbon layer to SiC. In the CVR method, a sic conversation layer is formed by reaction between carbon and gaseous reagent silicon monoxide at high temperature. Characterization of SiC coating was carried out using SEM. The other properties studied were hardness density and conversion efficiency.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.6
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• pp.215-219
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• 2016

Vanadium-doped SiC crystals have been grown by using a porous graphite inner crucible filled with vanadium carbide (VC) and by using a porous graphite plate and SiC + VC powders, respectively. Semi-insulating SiC crystals were grown onto the 6H-SiC seed crystals by PVT (Physical Vapor Transport) method. The grown crystals were indicated to be 6H-SiC polytype by XRD. As result of SIMS analysis, vanadium-rich precipitates were observed when the vanadium concentration was relatively higher than the maximum solubility of vanadium ($3-5{\times}10^{17}cm^{-3}$) in vanadium-doped SiC crystals, which resulted in degradation of crystal quality.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1103-1110
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• 1995

Silicon carbide (SiC) films have been deposited on the isotropic graphite by chemical vapor deposition. Change of deposition parameters affected significantly the microstructure and preferred orientation of SiC films. Preferred orientation of SiC films was (111) or (220), and microstructure showed the startified structure consisting of small crystallite or faceted columnar structure depending on the deposition parameters. For microhardness, (111) oriented film and stratified structure were superior to (220) oriented film and faceted columnar structure, respectively. Surface of (111) oriented films was less rough than that of (220) oriented films. Adhesion force between graphite substrate and SiC films was above 100N for crystalline films and 49N for amorphous film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.5-12
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• 2000

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single- crystalline 6H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 6H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented ($3.5^{\circ}$tilt) substrates from the (0001) basal plane in the <110> direction with the Si-face side of the wafer. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, transmittance spectra, Raman spectroscopy, XRD, Photoluninescence (PL) and transmission electron microscopy (TEM) were utilized. The best quality of 6H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_3H_8$ 0.2 sccm & $SiH_4$ 0.3 sccm.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1435-1440
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• 2013

To investigate the influence of the carbon matrix on the electrochemical performance of Si/C composites, four types of Si/C composites were prepared using graphite, petroleum coke, pitch and sucrose as carbon precursors. A ball mill was used to prepare Si/C blends from graphite and petroleum coke, whereas a dispersion technique was used to fabricate Si/C composites where Si was embedded in disordered carbon matrix derived from pitch or sucrose. The Si/pitch-based carbon composite showed superior Si utilization (96% in the first cycle) and excellent cycle retention (70% after 40 cycles), which was attributed to the effective encapsulation of Si and the buffering effect of the surrounding carbon matrix on the silicon particles.