• 제목/요약/키워드: Si-Jo

검색결과 1,042건 처리시간 0.138초

Effects of transition layer in SiO2/SiC by the plasma-assisted oxidation

  • 김대경;강유선;강항규;백민;오승훈;조상완;조만호
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.193.2-193.2
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    • 2016

  • We evaluate the change in defects in the oxidized SiO2 grown on 4H-SiC (0001) by plasma assisted oxidation, by comparing with that of conventional thermal oxide. In order to investigate the changes in the electronic structure and electrical characteristics of the interfacial reaction between the thin SiO2 and SiC, x-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), DFT calculation and electrical measurements were carried out. We observed that the direct plasma oxide grown at the room temperature and rapid processing time (300 s) has enhanced electrical characteristics (frequency dispersion, hysteresis and interface trap density) than conventional thermal oxide and suppressed interfacial defect state. The decrease in defect state in conduction band edge and stress-induced leakage current (SILC) clearly indicate that plasma oxidation process improves SiO2 quality due to the reduced transition layer and energetically most stable interfacial state between SiO2/SiC controlled by the interstitial C.

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