• 한국결정성장학회지
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• 제32권5호
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• pp.169-174
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• 2022

본 연구는 재생된 SiC 분말을 이용하여 단결정 성장 가능성을 검증하는 것을 목적으로 한다. 재활용 분말의 입도, 형상, 조성, 불순물 등의 기초적인 물성을 분석하고, 이를 활용하여 반응기 내부에서 일어날 수 있는 승화 거동을 예측하였다. 종합적인 판단 결과, 재생 분말의 물성은 단결정 성장에 적합 하였고, 이를 이용하여 단결정 성장 실험을 진행하였다. 높이 25 mm, 직경 100 mm 4H-SiC 단결정 잉곳을 다른 다형혼입 없이 성장 시켰다. 동공 결함 밀도는 0.02 ea/cm², 비저항은 0.015~0.020 ohm·cm² 측정되어 상용 수준의 품질을 얻었으나, 실제 소자 적용을 위해서는 전위 결함, 적층 결함과 관련된 추가 분석이 필요하다고 판단된다.

• 한국진공학회지
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• 제2권2호
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• pp.236-245
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• 1993

SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, 및 BiSeI : Ni 단결정을 고순도(99.9999%)의 성분원소에 혼합물을 투명석 영관내에 넣고, $1{\times}10^{-6}mmHg$의 진공에서 봉입하여 합성한 ingot를 사용하여, 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며, 광학적 energy band gap 구조는 간접전이형 이었고, energy gap의 온도의존성은 상전이에 관계되는 2개의 변곡점이 나타났으며, 연속된 영역에서는 Varshni 방정식을 만족하였다. 첨가한 3d 불순문(V, Cr, Ni)은 모결정의 $T_d$ 대칭을 갖는 주격자점에 +2가 ion으로 위치하며, 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak가 나타난다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• 한국결정성장학회지
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• 제29권6호
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• pp.383-388
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• 2019

개선된 열탄소환원법으로 합성된 금속불순물함량 1 ppm 이하의 고순도 SiC 미립 분말을 이용하여 2,100℃ 이상고온의 RF 가열 PVT 장치에서 SiC 단결정을 성장시켰으며, In-situ x-ray 이미지 분석을 통해 성장과정 중 분말의 승화거동 및 단결정 성장거동을 관찰하였다. SiC 분말은 단결정 성장의 공급원으로 온도가 높은 외곽 부분부터 소진되고 graphite 잔여물이 남았다. 성장 중 원료의 흐름은 가운데 부분으로 집중되었으며 SiC 단결정의 성장거동에도 영향을 미쳤는데, 이는 미립분말로 인한 도가니 내부 온도분포 차이가 원인으로 예상되었다. 단결정 성장이 완료된 후, 단결정 잉곳을 1 mm 두께의 단결정 기판으로 절단하고 또한, 잉곳에서 얻어진 단결정 기판은 전반적으로 짙은 황색의 4H -SiC가 관찰되었으며, 외곽에 일부 발생한 다결정은 시드결정을 시드홀더에 부착하는 과정에서 혼입된 기포층과 같은 불순물 혼입이 원인으로 사료된다.

• 한국재료학회지
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• 제21권6호
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• pp.334-340
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• 2011

Saw wires have been widely used in industries to slice silicon (Si) ingots into thin wafers for semiconductor fabrication. This study investigated the microstructural and mechanical properties, such as abrasive wear and tensile properties, of a saw wire sample of 0.84 wt.% carbon steel with a 120 ${\mu}M$ diameter. The samples were subjected to heat treatment at different linear velocities of the wire during the patenting process and two different wear tests were performed, 2-body abrasive wear (grinding) and 3-body abrasive wear (rolling wear) tests. With an increasing linear velocity of the wire, the tensile strength and microhardness of the samples increased, whereas the interlamellar spacing in a pearlite structure decreased. The wear properties from the grinding and rolling wear tests exhibited an opposite tendency. The weight loss resulting from grinding was mainly affected by the tensile strength and microhardness, while the diameter loss obtained from rolling wear was affected by elongation or ductility of the samples. This result demonstrates that the wear mechanism in the 3-body wear test is much different from that for the 2-body abrasive wear test. The ultra-high tensile strength of the saw wire produced by the drawing process was attributed to the pearlite microstructure with very small interlamellar spacing as well as the high density of dislocation.

• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.626-630
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• 2022

A 100 mm × 50 mm-sized (100) gallium oxide (Ga₂O₃) single crystal ingot was successfully grown by edge-defined film-fed growth (EFG). The preferred orientation and the quality of grown Ga₂O₃ ingot were compatible with a commercial Ga₂O₃ substrate by showing strong (100) orientation behaviors and 246 arcsec in X-ray rocking curve. Raman characterization was also performed for both samples; thereby providing various Raman-active characteristics of Ga₂O₃ crystals. In particular, we observed A_g(5) and A_g(10) peaks of Raman active mode, directly related to the impurity of the grown Ga₂O₃ crystal. Hence, the comparison of the crystal quality and Raman analysis might be useful for further enhancement of Ga₂O₃ single crystal quality in the future.

• 한국주조공학회지
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• 제14권1호
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• pp.28-34
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• 1994

Metallurgical-grade polycrystalline silicon was directionally solidified at growth rates of $0.2{\sim}1.0mm/min$ by using split type, reusable graphite molds which were coated with $Si_3N_4$ powder. The resultant grain sizes of the silicon ingots and the shapes of the solid/liquid(S/L) interfaces were investigated. X-ray diffraction was used to determine the preferred orientation in each of the silicon ingots. The impurity content of the silicon was analyzed and the resistivities of the ingots were measured. During the growth of an ingot, the shape of the S/L interface was concave to the silicon melt, and the resistivity decreased. The presence of Al which can be acting as a carrier, is thought to be the main factor causing such a decrease in resistivity. When a growth rate of 0.2㎜/min was used, the preferred orientation was found to be (111).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.50-53
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• 1992

The GaP crystals are growth by Synthesis Solute Diffusion(SSD) method and its properties are investigated. Etch pits density along vertical direction of ingot is increased from 3.8${\times}$10$^4$cm$\^$-2/ of first freeze to 2.3${\times}$10$\^$5/cm$\^$-2/ of last freeze part. The carrier concentration and mobilities are measured to 197.49$\textrm{cm}^2$/V. sec and 6.75${\times}$10$\^$15/cm$\^$-3/ at room temperature. The temperature dependence of optical energy gap is empilically fitted to E$\_$g/(T)=2.3383-(6.082${\times}$10$\^$-4/T${\times}$/(373.096+T)[eV]. Photo-luminescence spectra measured at low temperature are consist with sharp line-spectra near band-gap energy and radiative recombination between shallow Si-donor to Zn-acceptor and its phonon reprica, and broad emission. The infrared absorption in GaP is cause to phonon coupling modes of TO, LO, LA, TA$_1$, TA$_2$and vibration modes of Ga$_2$O, Si-donor and Zn-acceptor, respectively.

• 헤리티지:역사와 과학
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• 제50권1호
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• pp.4-17
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• 2017

본 연구에서는 부여 관북리 유적 "나" 지구에서 출토된 9점의 제철 관련 유물에 대한 분석을 실시하여 제철유구의 성격을 확인하고자 하였다. 연구결과, GB1과 GB6은 반환원괴로 확인되며, GB2, GB3, GB4, GB5는 정련 과정에서 생성된 단야재로 확인되었다. 노벽 시편인 GB7의 내측에서는 고온지시광물인 Mullite, Cristobalite가 확인되었고, $FeO-Al_2O_3-SiO_2(FAS)$ 삼원상태도에 대입한 단야재의 정출온도는 $1200{\sim}1300^{\circ}C$로 확인되었다. 덩이쇠인 GB8은 괴련강계 단조철기로 확인되었는데, 이는 철기제작을 위한 중간소재로 사용된 것으로 보이며, GB8의 내부에서 관찰되는 비금속 개재물은 단야재의 조직과 성분이 유사함을 알 수 있다. 따라서 부여 관북리 유적 "나" 지구의 제철유적은 직접제철법으로 생산된 괴련철의 정련을 기본으로 하는 소규모 제철시설이었던 것으로 추정할 수 있다.

• 한국주조공학회지
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• 제15권5호
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• pp.507-513
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• 1995

The effect of forced convention on the solute redistribution of the Al ingot was studied quantitatively in an effort to fabricate high purity aluminum using a segregation method. Based on the experimental results, the solute concentration in the solid phase tended to decrease at the early state of solidification, and then increased gradually as solidification proceeded. Fe and Si concentrations decreased as growth rate decreased and as revolution speed increased. The solute redistribution obtained from the BPS model incorporated with the tangential flow component as well as the axial flow component within the melt, agreed well with the measurements.