• Nuclear Engineering and Technology
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• 제42권4호
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• pp.442-449
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• 2010

Recently, the neutron irradiation for large diameter silicon (Si)-ingots of more than 8" diameter is requested to satisfy the demand for the neutron transmutation doping silicon (NTD-Si). By increasing the Si-ingot diameter, the radial non-uniformity becomes larger due to the neutron attenuation effect, which results in a limit of the feasible diameter of the Si-ingot. The current evaluation method has a certain limit to precisely evaluate the radial uniformity of Si-ingot because the current evaluation method does not consider the effect of the Si-ingot diameter on the radial uniformity. The objective of this study is to propose a new evaluation method of radial uniformity by improving the conventional evaluation approach. To precisely predict the radial uniformity of a Si-ingot with large diameter, numerical verification is conducted through comparison with the measured data and introducing the new evaluation method. A new concept of a gradient is introduced as an alternative approach of radial uniformity evaluation instead of the radial resistivity gradient (RRG) interpretation. Using the new concept of gradient, the normalized reaction rate gradient (NRG) and the surface normalized reaction rate gradient (SNRG) are described. By introducing NRG, the radial uniformity can be evaluated with one certain standard regardless of the ingot diameter and irradiation condition. Furthermore, by introducing SNRG, the uniformity on the Si-ingot surface, which is ignored by RRG and NRG, can be evaluated successfully. Finally, the radial uniformity flattening methods are installed by the stainless steel thermal neutron filter and additional Si-pipe to reduce SNRG.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.216-216
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• 2012

The purpose of this work is to investigate a back surface field (BSF) on variety wafer resistivity for industrial crystalline silicon solar cells. As pointed out in this manuscript, doping a crucible grown Cz Si ingot with Ga offers a sure way of eliminating the light induced degradation (LID) because the LID defect is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation along the Ga doped Cz Si ingot. Because of the resistivity variation the Cz Si wafer from different locations has different performance as know. In the light of B doped wafer, we made wider resistivity in Si ingot; we investigated the how resistivities work on the solar cells performance as a BSF quality.

• Korean Chemical Engineering Research
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• 제58권3호
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• pp.369-380
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• 2020

대부분의 단결정 실리콘 잉곳은 초크랄스키(Czochralski(Cz)) 공정으로 제조된다. 그러나 단결정 실리콘 잉곳을 제품화 및 태양 전지 기판으로 가공하였을 때 산소 불순물이 있는 경우 낮은 효율성을 나타내는 경향이 있다. 단결정 Si-잉곳의 생산을 위해서는 용융 Si를 녹인 다음 단결정 Si의 시드(Seed)로 결정화하는 초크랄스키(Cz) 공정을 도입한다. 용융된 다결정 Si-덩어리를 단결정 Si-잉곳으로 결정성장 될 때, 열 전달은 Cz-공정의 구조에서 중요한 역할을 한다. 본 연구에서 고품질 단결정 실리콘 잉곳을 얻기 위해 Cz-공정의 최적화된 설계를 구성하였다. 결정 성장 시뮬레이션로부터 결정성장을 위한 Pulling rate 및 Rotation speed에 최적의 변수값을 형성하기 위해 사용되었으며, 변형된 Cz-공정에 대한 연구 및 해당 결과가 논의되며 결정 성장 시뮬레이션을 사용하여 Cz-공정의 Pulling rate, Rotation speed 및 Melt charge level의 최적화된 설계로 인한 결정성장시 단결정 실리콘으로 유입되는 산소 농도 최소화를 설계하였다.

• Nuclear Engineering and Technology
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• 제38권7호
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• pp.675-680
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• 2006

The neutron transmutation doping of silicon (NTD), as a method to produce a high quality semiconductor, utilizes the transmutation of a silicon element into phosphorus by neutron absorption in a silicon single crystal. In this paper, we present the design of a neutron screen for a 6' Si ingot irradiation in the NTD2 hole of HANARO. The goal of the design is to achieve an even flat axial distribution of the resistivity, or $Si^{30}(n,{\gamma})Si^{31}$ reaction rate, in the irradiated Si ingot. We used the MCNP4C code to simulate the neutron screen and to calculate the reaction rate distribution in the Si ingot. The fluctuations in the axial distribution were estimated to be within ${\pm}2.0%$ from the average for the final neutron screen design; thus, they satisfy the customers' requirement for uniform irradiation. On the other hand, we determined the optimal insertion depths of the Si ingots by varying the critical control rod position, which greatly affects the axial flux distribution.

• 마이크로전자및패키징학회지
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• 제10권3호
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• pp.67-71
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• 2003

실리콘 주괴(ingot)에서 실리콘 웨이퍼를 제조할 때 사용되는 슬러리는 SiC 연마재와 절삭유를 포함한다. 실리콘 웨이퍼 제조 시 생긴 폐슬러지에서 SiC 연마재와 절삭유는 분리되어 재활용된다. 본 연구는 폐슬러지 Si 분말에 C분말을 혼합하여 SiC를 합성하는 것에 관한 것이다. 다양한 크기의 SiC 분말과 휘스커가 제조되었으며 기존의 휘스커의 크기보다 작은 나노미터 크기의 휘스커도 발생하였다. 일반적으로 휘스커는 금속 불순물을 첨가하여 제조되는데, 본 연구에서 나노미터 크기의 휘스커 발생은 폐슬러지에 첨가되어있는 미세한 크기의 금속불순물의 영향으로 판단된다.

• 한국주조공학회지
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• 제32권6호
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• pp.276-283
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• 2012

This study presents the results on the changes of crucible thermal conductivity and inflow of Ar, and constructed the mathematical model about heat transfer into furnace. As process variables, simulation model was designated thermal conductivity of crucible to $0.5W{\cdot}m^{-1}{\cdot}K^{-1}$, $1W{\cdot}m^{-1}{\cdot}K^{-1}$, $2W{\cdot}m^{-1}{\cdot}K^{-1}$, $4W{\cdot}m^{-1}{\cdot}K^{-1}$, and inflow rate of Ar to 15 L/min, 30 L/min, 60 L/min. Initial condition and boundary condition were set respectively in two terms of process. Each initial conditions were set up by the preceding simulation of heat and fluid flow. The primary goal is the application of unidirectional growth of Si ingot using the result. In the result of the change of heat conductivity of crucible, the higher thermal conductivity of crucible shows the shorter solidification time and the bigger temperature difference. And the flow patterns are changed with the inflow rate of Ar. Finally, we found that the lower crucible's thermal conductivity, the better crucible is at polycrystalline Si ingot growth. But in case of Ar inflow, it is hard to say about good condition. This data will be evaluated as useful reference used in allied study or process variable control of production facilities.

• Korean Chemical Engineering Research
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• 제49권4호
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• pp.432-437
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• 2011

최근 산업에서는 Czochralski(Cz) 공정에서 ingot의 생산성을 높이고 동시에 에너지 소비를 적절하게 할 수 있는 최적 설계가 요구되고 있다. 본 연구에서는 컴퓨터 시뮬레이션을 이용하여 현장에서 적용 가능한 설계 인자인 도가니(crucible) 크기, shield 모양, heater의 위치를 변동하면서 가장 최적의 생산성 및 전력 절감 설계를 찾아내는 연구를 수행하였다. 대상 공정은 직경 8 인치 태양전지용 ingot 생산 공정으로 생산성 증대를 위해 도가니 크기를 22인치에서 24인치로 바꾸어 안정적 생산이 가능한 최적설계를 찾았다. 이때 산업에서 외형변화가 허용되지 않아 단열두께만 줄여 최적설계를 찾았다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2008년도 춘계학술대회 논문집
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• pp.52-56
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• 2008

Inclusions in forged large steel ingots of plan carbon steel and tool steel are investigated using optical microscop observation and WDX analysis. The large nonmetallic inclusions which is over $30\sim300{\mu}m$ in their diameter were observed in the samples that has been no good on a nondestructive test. The most of the inclusions were consist of some kind of oxides, ${Al_2}{O_3}$, $SiO_2$, CaO, MgO in forms of particles and glassy with an iron particles. The experimental large steel ingot was cast with a pouring temperature which is about ten centigrade higher than the field standard. The inclusions were observed in the test ingot are the smaller than that was in a usual forged steel ingot and is spherical shape with a glassy agglomerated ${Al_2}{O_3}-SiO_2-CaO-MgO$ particle. The pouring temperature is affected on removing the nonmetallic inclusions during the solidification by a floating mechanism.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.261-264
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• 2007

In this study, the consolidation and casting processes of fine Si powders, by-products of making high purity Poly-Si rods in the current method, were systematically investigated for use as economical solar-grade feedstock. Morphology, size, and contamination type of the poly-Si fine powders were inspected by combined analysis of SEM, particle size analyzer, and FT-IR. Poly-Si powder compacts were tried to fabricate by a consolidation process without a binding agent and then their density ratio and strength were evaluated. Finally, the electrical resistivity of the specimens prepared by an electromagnetic casting method was examined for purity assessment.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 1997년도 고액공존금속의 성형기술 심포지엄
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• pp.183-195
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• 1997

The micorstructural characteristics, particularly $\alpha$-halo formation, in semi-solid state processed hypereutectic Al-Si alloy was investigated. The microstructural changes during reheating of wedge type mold cast ingot, hot-rolled sheet, and Si particulate reinforced Al composite was compared with those occurred during stirring of semi-solid state hypereutectic alloy. In the case of semi-solid state reheating of wedge type ingot and hot-rolled sheet, fine particles of Si as well as $\alpha$-halo formed after heat treatment. Although there seemed to be no coarsening with variations of holding time, the region of $\alpha$-halo decreased due to homogenization. Nucleation and recrystallization was accelerated with the addition of alloying elements during hot rolling resulting in primary Si particle size decrease and $\alpha$-halo formation. In the case of extruded specimens, very little morphological change of reinforcing Si particles was observed. Almost no $\alpha$-halo formed during reheating because of the oxide film formed on the reinforcing Si particles which acted as a diffusion barrier between the matrix and the primary Si particles.