• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.40 no.7
• /
• pp.417-427
• /
• 2016

This paper is the first investigation of the steady flow characteristics of an SI engine with a semi-wedge combustion chamber as a function of the port shape. For this purpose, the planar velocity profiles were measured at the 1.75B position by particle image velocimetry. The flow patterns were examined with both a straight and a helical port. Two swirls were observed up to 4 mm valve lift with the straight port and up to 2 mm with the helical one; however, only one swirl was present after these lifts. The flow characteristics changed suddenly between 4 and 5 mm lift in the straight port; on the other hand, the change with lift was gradual with the helical port - the transition points between flow regimes were different with the port shapes. In addition, the centers of the swirls were relatively far from the cylinder center so that the effect of eccentricity may not be negligible at 1.75B, regardless the shape. The eccentricity values with the straight port were especially high - over 0.5 for all lifts. Finally, real velocities were found to be much lower than those predicted by the assumption of ISM evaluation, with the profiles differing qualitatively as well.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.1
• /
• pp.14-18
• /
• 2007

The electric property in the $GaAs-Al_{x}Ga_{1-x}$ quantum well with the Si ${\delta}-doping$ layer in a non-central position is studied through the effect of the electric field intensity on the electron distribution. The finite difference method is used for the calculation of the subband energy level and its wavefunction. In order to account for the change of the potential energy due to the charged particles, the self consistent method is employed. As the Si ${\delta}-doping$ layer becomes closer to the heterojunction interface, the electrons less affected by Coulomb scattering are greatly increased under the external electric field. Therefore, the high speed device is suggested due to the fact that the high mobility electrons can be increased by positioning the ${\delta}-doping$ layer in the quantum well and by applying the electric field intensity.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.24 no.11
• /
• pp.1464-1469
• /
• 2000

The effects of SiCl$_4$addition on flame structures have been studied in flame hydrolysis deposition (FHD) processes using Coherent anti-Stokes Raman spectroscopy (CARS) and planar laser induced fluorescence (PLIF) to measure temperatures and OH concentrations, respectively. The results demonstrate that even a small amount of SiCl$_4$ addition can change thermal and chemical structures of H$_2$/O$_2$ diffusion flames. When SiCl$_4$ is added to a flame temperature decreases in non-reacting zone due to the increases in both specific heat and density of the gas mixture, while flame temperature increase in particle formation zone due to the heat release through hydrolysis and oxidation reactions of SiCl$_4$. It is also found that OH concentration decreases dramatically in particle formation zone where temperatures increase. This can be attributed to consumption of oxidative species and generation of HCl during silica formation.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.4
• /
• pp.148-153
• /
• 2001

New piezoelectric $Ca_{3}NbGa_{3}Si_{2}O_{14}$ (CNGS) single crystal was grown using the Czochralski technique. The crystal structure of CNGS was found to be isostructural with $A_{3}BC_{3}D_{2}O_{14}$. The unit cell parameters were a=8.087 and c=4.983 and the space group was P321. The distribution of each cation was found to be ordered in each site. Some piezoelectric properties of CNGS are showed.

• Journal of the Korean Home Economics Association
• /
• v.41 no.8
• /
• pp.55-62
• /
• 2003

Natural dyes generally fan into two categories; organic dyes coming from animals and plants and inorganic dyes obtained from various minerals such as bengala, loess, ultramarine, prussian blue and etc. The main components of volcanic ash is clay mineral such as kaolinite, illite, quartz. Clay minerals Composing volcanic ash are kaolinite［$Al_4Si_4O_{10}{(OH)_{8}}$］, illite［$K_{X}Al_2(Si,\;Al)_4O_{10}{(OH)}_2$］, quartz［$SiO_2$］, homblende［$Na_{0-1}\;Ca_2{(Mg,\;Fe,\;Al)}_5{(Si,\;Al)}_{8}O_{22}{(OH)}_2$］and etc. And the redish color mainly comes from iron oxide. In this paper, two different classes of dyeing process were tested; dyeing with volcanic ash only and cationic agent pre-treatment followed by dyeing with volcanic ash. The compositions of the volcanic ash powder and the volcanic ash deposited on the cotton knitted fabrics identified by energy dispersive spectrometer and XRD analysis. The major chemical components of volcanic ash deposited on the cotton knitted fabrics were confirmed to be the saicon oxide, iron oxide, and aluminum oxide and etc. According to the analysis by XRD and EDS-SEM, kaolinite, illite and quartz were also identified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.77-78
• /
• 2009

We report numerical simulations to investigate of the dependence of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of 10um, but varying the channel width W from 5nm to 5um, and thickness t from 10nm to 30nm. We have shown that $Q_{ON}/Q_{OFF}$ drastically decreases (from ${\sim}2.9{\times}10^4$ to ${\sim}9.8{\times}10^3$) as the channel thickness increases (from 10nm to 30nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed than that in the bottom of control channel.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.291-291
• /
• 2011

플라즈마에 노출된 재료 표면의 온도 증가는 다음과 같은 요인에 의해서 결정된다. 이온의 충돌에 의한 역학적 에너지, 이온의 중성화, 라디칼의 안정화에 의한 에너지 방출(잠열, latent heat), 플라즈마에서 방출된 빛의 흡수. 이중 식각을 위한 기판 바이어스에 의해서 주로 결정되는 이온 충돌 에너지와 잠열의 방출이 300 mm wafer용 유도 결합 플라즈마 식각 장치에서 소스 전력과 바이어스 전력에 따라서 어떻게 변화하는지 전산 유체 역학 모사 프로그램인 CFD-ACE를 이용하여 상용 식각 장비인 AMAT사의 DPS II를 대상으로 온도 분포의 변화를 계산하였다. 실험 결과와 비교를 위하여 다섯 곳에(상, 하, 좌, 우, 중심) 열전대를 부착한 온도 측정 웨이퍼를 기판의 위치에 설치하고 여러 가지 실험 조건에 대해서 온도의 변화를 측정하였다. Ar 10 mTorr에서 2열 병렬 안테나의 전력을 300 W에서 시간에 따른 온도의 변화를 측정하였다. 이때 wafer의 평균 온도는 $28.9^{\circ}C$에서 $150^{\circ}C$까지 12분 내에 상승하였으며 최고 온도에 도달한 다음에는 거의 일정하게 유지 되었다. Si의 식각에서 온도의 영향을 가장 크게 받는 반응은 F 라디칼에 의한 Si의 직접 식각이며 Arrhenius 식의 형태로 표현하면 0.116*exp (-1250/T)의 형태로 된다. 문헌에 보고된 계수를 이용해서 $29^{\circ}C$의 식각 속도와 플라즈마에 의한 가열 최고 온도인 $150^{\circ}C$ 때의 값을 비교해보면 3.3배의 차이가 난다. 따라서 4%내의 식각 균일도를 목표로 하는 폴리 실리콘 게이트 식각 장비의 설계에서는 플라즈마에 의한 가열 불균일을 상쇄 할 수 있는 히터와 냉각 구조의 최적 설계가 필요하다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.9
• /
• pp.728-731
• /
• 2009

We report numerical simulations to investigate of the dependendce of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of $10\;{\mu}m$, but varying the channel width W from 5 nm to $5\;{\mu}m$, and thickness t from 10 nm to 30 nm. We have show that $Q_{ON}/Q_{OFF}$ drastically decreases (from $^{\sim}2.9{\times}10^4$ to $^{\sim}9.8{\times}10^3$) as the channel thickness increases (from 10 nm to 30 nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed then in the bottom of control channel.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.18 no.1
• /
• pp.101-112
• /
• 1994

The measurement of residual stress distribution of $Si_3N_4/SUS304$ joint was performed on 23 specimens with the same joint condition using PSPC type X-ray stress measurement system and the two-dimensional elastoplastic analysis using finite element method was also attempted. As results, residual stress distribution near the interface on the ceramic side of the joint was revealed quantitatively. Residual stress on the ceramic side of the joint was turned out to be tensional near the interface, maximum along the edge, varying in accordance with the condition of the joint and variance to be most conspicuous for the residual stress normal to the interface characterized by the stress singularities. In the vicinity of the interface, the high stress concentration occurs and residual stress distributes three-dimensionally. Therefore, the measured stress distribution differed remarkably from the result of the two-dimensional finite-element analysis. Especially at the center of the specimen near the interface, the residual stress, $\sigma_{x}$ obtained from the finite element analysis was compressive, whereas measurement using X-ray yielded tensile $\sigma_{x}$. Here we discuss two dimensional superposition model the discrepancy between the results from the two dimensional finite element analysis and X-ray measurement.

• YAKHAK HOEJI
• /
• v.45 no.5
• /
• pp.460-467
• /
• 2001

Heavy metals, such as Al, As, Cd, Cr Cu, Fe, Hg, Mn, Mo, Ni, Pb, Se, Si, Sn, V and Zn, were analysed on kidney cortex and medulla of Korean obtained from 154 forensic medical autopsy cadavers. Heavy metals were analysed by inductively coupled plasma atomic emission spectrometry In kidney cortex, the concentrations of Al, Cd, Cu, Mn, Mo, Pb, Se, Si and Zn were significantly higher than in the kidney medulla (Cd, Cu, Mn, Mo, Zn : p<0.01, AA, Pb, Se, Si : p<0.05). No significant local differences were found between kidney cortex and kidney medulla in the concentrations of As, Cr Fe, Hg, Ni, Sn and V. In kidney cortex and kidney medulla, Cd concentrations correlated positively with age, but Mn concentrations correlated negatively with age. A significantly positive correlation between Cd and Zn, Cd and Cu, Zn and Cu, Al and Si, Se and As was found in kidney cortex and kidney medulla. A significantly positive correlation between Hg and Se was only observed in kidney cortex. These results indicate that the distribution of hazardous heavy metals is similar to that of essential elements in the tissues.