• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.200-203
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• 2000

Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.160-160
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• 2010

테라헤르츠 소스로 저온 InGaAs를 대체하기 위해 저온에서 성장한 $In_{0.64}Al_{0.36}Sb$의 성장 온도에 따른 광학적 photoluminescence (PL)과 time-resolved PL (TRPL) 측정을 이용하여 분석하였다. 또한 Be 도핑 농도에 따른 p형 $In_{0.64}Al_{0.36}Sb$의 PL과 TRPL 특성을 undoped $In_{0.64}Al_{0.36}Sb$와 Si-doped $In_{0.64}Al_{0.36}Sb$ 결과와 비교 분석하였다. 본 연구에 사용한 시료는 분자선 엑피탁시 (molecular beam epitaxy)법으로 GaAs 기판 위에 $In_{0.64}Al_{0.36}Sb$을 다양한 성장온도에서 ${\sim}3.7\;{\mu}m$두께 성장하였다. $In_{0.64}Al_{0.36}Sb$의 성장온도는 $400^{\circ}C$ 에서 $460^{\circ}C$까지 변화시키며 성장하였으며, Si과 Be 도핑한 $In_{0.64}Al_{0.36}Sb$ 시료는 약 $420^{\circ}C$에서 성장하였다. 모든 시료의 PL 피크는 ~1450 nm 근처에서 나타나며 단파장 영역에 shoulder 피크가 나타났다. 그러나 가장 낮은 온도 $400^{\circ}C$에서 성장한 시료는 1400 nm에서 1600 nm에 걸쳐 매우 넓은 피크가 측정되었다. PL 세기는 $450^{\circ}C$ 에서 성장한 시료가 가장 강하게 나타났으며, $435^{\circ}C$에서 성장한 시료의 PL 세기가 가장 약하게 나타났다. 방출파장에 따른 PL 소멸곡선을 측정하였으며 double exponential function을 이용하여 운반자 수명시간을 계산하였다. 운반자 수명시간은 빠른 소멸성분 $\tau_1$과 느린 소멸성분 $\tau_2$가 존재하고 빠른 성분 $\tau_1$의 PL 진폭이 약 80%로 느린 성분 $\tau_2$보다 우세하게 나타났다. 각 PL 피크에서의 운반자 수명시간 $\tau_1$은 ~1 ns로 성장온도에 따른 변화는 관찰되지 않았다. 또한 방출파장이 1400 nm에서 1480 nm까지 PL 피크 근처에서 운반자 수명시간은 거의 일정하게 나타났다. Be-doped 시료의 PL 피크는 1236 nm에서 나타나며, Si-doped 시료는 1288 nm, undoped 시료는 1430 nm에서 PL 피크가 측정되었다. PL 피크에서 PL 소멸곡선은 Be-doped 시료가 가장 빨리 감소하였으며, Si-doped 시료가 가장 길게 나타났다. 이러한 결과로부터 $In_{0.64}Al_{0.36}Sb$의 광학적 특성은 성장 온도, dopant type, 도핑 농도에 따라 변화하는 것을 확인하였다.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.180-184
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• 2003

Ce-doped $Y_2$SiO$_{5}$ phosphor particles of spherical morphology, fine size, high crystallinity and high photoluminescence (PL) intensity were prepared by spray pyrolysis. When nitrate precursor solution is adopted, hollow particles were formed by uneven drying rate between surface and inside of droplet. Citric acid and ethylene glycol were introduced as polymeric precursor to control the morphology of particles. When polymeric solution is adopted, polymeric chain is formed by the esterification reaction between carboxyl and hydroxy groups of citric acid and ethylene glycol, and considered as controlling the drying characteristics of droplet. $Y_2$$SiO_{5}$ :Ce phosphor particles prepared from polymeric precursor solution were spherical, filled, fine size and not agglomerate before and after post heat treatment. The optimum doping concentration of cerium was 0.5 mol% of overall solution concentration. The optimum amount of TBOS of high PL intensity and pure crystallinity of X2-type $Y_2$$SiO _{5}$ was 105% of stoichiometric amount. The PL intensity of $Y_2$X$/_{5}$ :Ce phosphor particles prepared using the polymeric precursor solution was 164% of that of the nitrate precursor solution due to homogeneous composition and good morphology.y.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.391-391
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• 2010

The stability enhancement of Znic oxide thin film transistor deposited by PLD-DBD has been reported here using the bias temperature stress test. Znic oxide (ZnO) thin films were deposited on $SiO_2$/Si (100) by pulsed laser deposition method with and without dielectric barrier discharge (DBD) method. The DBD is the efficient method to adopt the nitrogen ions into the thin films. The TFT characteristics of ZnO TFTs with and without Nirogen (N) doping show similar results with $I_{on/off}$ of $10^5{\sim}10^6$. However. the bias temperature stress (BTS) test of N-doped ZnO TFT with DBD shows higher stability than that of ZnO TFT.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.251-251
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• 2011

본 연구에서는 Zr이 도핑 된 ZnSnO (ZZTO) 기반의 물질을 액상공정을 이용하여 합성하고, 박막트랜지스터를 제작하였다. 출발 물질로써 지르코늄 클로라이드 (ZrCl4), 아연 아세테이트 디하이드레이트 ($Zn(CH_3COO)_2{\cdot}2H_3O$), 틴 클로라이드 ($SnCl_2$)를 아연과 주석 프리커서의 비율을 4:7로 고정하고, 지르코늄 프리커서의 몰비를 변형시켜 제작하였다. 제작된 솔루션은 0.25몰의 몰 농도로 고정하였다. 솔벤트로는 2-메톡시에탄올 (2-methoxyethanol)을 사용하였으며, 준비된 솔루션은 $0.2{\mu}m$ 필터를 이용하여 필터링을 실시하였다. Heavily doped p+ Si 기판에 열적 산화법을 이용하여 120 nm 두께의 $SiO_2$를 성장시킨 것을 게이트 및 게이트 절연막으로 이용하였으며, 스핀코팅을 이용하여 ZZTO 박막을 코팅하였다. 코팅 된 기판은 $300^{\circ}C$에서 $500^{\circ}C$ 사이로 2시간 열처리를 실시하였으며, 마지막으로 소오스/드레인을 스퍼터링법으로 Al을 증착하였다. Zr 함량비, 열처리 온도, 제작된 솔루션의 온도에 따른 박막단계를 파악하기 위해 X-ray photoelectron spectroscopy (XPS), thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HR-TEM), Hall-effect measurement, UV-Vis spectroscopy 분석을 실시하였으며, 제작된 소자는 semiconductor analyzer (HP4156C)를 이용하여 측정하였다.

• Environmental Engineering Research
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• v.19 no.3
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• pp.205-214
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• 2014

Petroleum a vital commodity affecting every aspect of 21st century. Toxicity and adverse effects of sulphur as catalyst in petroleum products is of great concern required development of techniques for desulphurization in compliance with the International standards. Installation of desulphurizing units costs over $200 million per unit placing economic burden on developing countries like Pakistan. Present study analysis of commercial fuels (station petrol and jet fuel JP8) on gas chromatography-mass spectrometry (GC-MS) identified sulphur concentration of 19.94 mg/L and 21.75 mg/L, respectively. This scenario urged the researcher to attempt synthesis of material that is likely to offer good adsorption capacity for sulphur. Following protocol of sol-gel method, transition metals (Ni, Cu, Zn) solution is gelated with tetraethoxysilane (TEOS; silica precursor) using glycerol. Fourier transform infrared spectroscopy (FTIR) spectra revealed bonding of Zn-O, Cu-O, and Ni-O by stretching vibrations at $468cm^{-1}$, $617cm^{-1}$, and $468cm^{-1}$, respectively. Thiophene and Benzothiophene mixed in n-heptane and benzene (4:1) for preparation of Model Fuels I and II, respectively. Each of silica based metal was applied as adsorbent in batch mode to assess the removal efficiency. Results demonstrated optimal desulphurization of more than 90% following efficacy order as Si-Ni > Si-Zn > Si-Cu based adsorbents. Proposed multilayered (Freundlich) adsorption mechanism follows ${\pi}$-complexation with pseudo secnd order kinetics.

• Nuclear Engineering and Technology
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• v.28 no.5
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• pp.458-466
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• 1996

The effects of dopants on the modification of microstructure of UO$_2$ and UO$_2$-4wt%CeO$_2$ sintered pellets have been studied in hydrogen and $CO_2$/CO mixture atmospheres by using $Ta_2O_5$, TiO$_2$ and $Nb_2O_5$ as sintering additives. The dopant were added as oxide powders and homogenized by attrition milling. The mixed powders were pressed, and then sintered in hydrogen at 1$700^{\circ}C$ , or in oxidizing atmosphere using Controlled $CO_2$/CO mixtures at 125$0^{\circ}C$. Both density and microstructure of UO$_2$ are modified by the addition of dopants in reducing atmosphere. The sintered density is increased with $Ta_2O_5$ addition up to 0.33wt% and subsequently decreased with higher content of the additive. The effect on the densification and the gain growth are apparent with the addition of 0.24wt% $Nb_2O_5$. With 0.lwt% titania and 0.6wt% $Ta_2O_5$, the sintered density is decreased, but the grain size is increased. In oxidizing atmosphere, the grain sizes for UO$_2$ doped with the above additives are smaller than that for pure UO$_2$. The grain size of Ta or Nb-doped UO$_2$ is decreased with increasing $CO_2$/CO ratio, but that of pure UO$_2$or T-doped UO$_2$ is increased. A large portion of second phases is observed in UO$_2$ doped with 0.lwt% TiO$_2$ sintered in hydrogen atmosphere, while, in $CO_2$/CO atmospheres, the second phases or dopant agglomerates are not observed. For UO$_2$-4wt%CeO$_2$ mixed oxide, the effect of additives on the gain growth is not so much as that for the pure UO$_2$. This is attributed to the formation of clusters by dopant cations and Ce ions, so that the additives contribute to a lesser exent to the grain growth for the mixed oxide.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1440-1441
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• 2011

Apatite-lanthanum silicate has attracted considerable interest in recent years due to its high oxide ion conductivity, In this paper, Bi-doped samples $La_8Bi_2(SiO_4)_6O_3$ were prepared by conventional solid-state method and the influences of Bi-dopant content on calcining temperature were reported. The Samples were characterized by X-ray diffraction (XRD) and scanning electron micrograph (SEM) and impedance analysis.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.130-133
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• 1999

Paraelectric ZrTiO4 thin films were synthesized on a Si(100) substrate using DC magnetron reactive sputtering. Films deposited above-400$^{\circ}C$ exhibited crystalline characteristics. The dielectric constants ($\varepsilon$) and dielectric losses (tan$\delta$) of as-deposited and annealed films were measured in the 1 MHz range using a Pt upper electrode and a phosphorous-doped si bottom electrode. Preliminary data showed that as the deposition temperature increased, the dielectric losses decreased while the dielectric constants did not change significantly. similar trends for dielectric losses were observed when the as-deposited samples were annealed at 800$^{\circ}C$. The reduction of dielectric losses at high-deposition temperatures and post annealing correlated well with the x-ray diffraction peak widths.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1568-1571
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• 2005

We have evaluated thermal stability of a $BaAl_2Si_2O_8:Eu^{2+}$ $(BAS:Eu^{2+})$, which have polymorph property such as hexagonal, monoclinic structure depending upon firing temperature. When both polymorph $BAS:Eu^{2+}$ were baked in air at 500 $^{\circ}C$ for 30 min, the photoluminescence (PL) intensity of $monoclinic-BAS:Eu^{2+}$ was maintained of the initial intensity. However, the PL intensity of $hexagonal-BAS:Eu^{2+}$ decreased significantly, corresponding to about 34 %. From analyses of Rietveld refinement, the difference of thermal stability of both $BAS:Eu^{2+}$ can be ascribed to both crystal structure of host materials and the average interatomic distances between $Eu^{2+}$ ion and oxygen their crystal structure which plays a key role of shield for Eu2+ ions against oxidation atmosphere.