• Nuclear Engineering and Technology
• /
• v.56 no.4
• /
• pp.1532-1537
• /
• 2024

Time-of-flight (TOF) PET detectors with fast-rise-time scintillators and fast-single photon time resolution silicon photomultiplier (SiPM) have been developed to improve the coincidence timing resolution (CTR) to sub-100 ps. The CTR can be further improved with an optimal bandwidth and minimized electronic noise in the readout circuit and this helps reduce the distortion of the fast signals generated from the TOF-PET detector. The purpose of this study was to develop an ultra-high frequency and fully-differential (UF-FD) readout circuit that minimizes distortion in the fast signals produced using TOF-PET detectors, and suppresses the impact of the electronic noise generated from the detector and front-end readout circuits. The proposed UF-FD readout circuit is composed of two differential amplifiers (time) and a current feedback operational amplifier (energy). The ultra-high frequency differential (7 GHz) amplifiers can reduce the common ground noise in the fully-differential mode and minimize the distortion in the fast signal. The CTR and energy resolution were measured to evaluate the performance of the UF-FD readout circuit. These results were compared with those obtained from a high-frequency and single ended readout circuit. The experiment results indicated that the UF-FD readout circuit proposed in this study could substantially improve the best achievable CTR of TOF-PET detectors.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.400-401
• /
• 2012

그래핀(Graphene)은 열 전도도가 높고 전자 이동도(200 000 cm2V-1s-1)가 우수한 전기적 특성을 가지고 있어 전계 효과 트랜지스터(Field effect transistor; FET), 유기 전자 소자(Organic electronic device)와 광전자 소자(Optoelectronic device) 같은 반도체 소자에 응용 가능하다. 그러나 에너지 밴드 갭이 없기 때문에 소자의 전기적 특성이 제한되는 단점이 있다. 최근에는 아크 방출(Arc discharge method), 화학적 기상 증착법(Chemical vapor deposition; CVD), 이온-조사법(Ion-irradiation) 등을 이용한 이종원자(Hetero atom)도핑과 화학적 처리를 이용한 기능화(Functionalization) 등의 방법으로 그래핀을 도핑 후 에너지 밴드 갭을 형성시키는 연구 결과들이 보고된 바 있다. 그러나 이러한 방법들은 표면이 균일하지 않고, 그래핀에 많은 결함들이 발생한다는 단점이 있다. 이러한 단점을 극복하기 위해 자가조립 단층막(Self-assembled monolayers; SAMs)을 이용하여 이산화규소(Silicon oxide; SiO2) 기판을 기능화한 후 그 위에 그래핀을 전사하면 그래핀의 일함수를 쉽게 조절하여 소자의 전기적 특성을 최적화할 수 있다. SAMs는 그래핀과 SiO2 사이에 부착된 매우 얇고 안정적인 층으로 사용된 물질의 특성에 따라 운반자 농도나 도핑 유형, 디락 점(Dirac point)으로부터의 페르미 에너지 준위(Fermi energy level)를 조절할 수 있다[1-3]. 본 연구에서는 SAMs한 기판을 이용하여 그래핀의 도핑 효과를 확인하였다. CVD를 이용하여 균일한 그래핀을 합성하였고, 기판을 3-Aminopropyltriethoxysilane (APTES)와 Borane-Ammonia(Borazane)을 이용하여 각각 아민 기(Amine group; -NH2)와 보론 나이트라이드(Boron Nitride; BN)로 기능화한 후, 그 위에 합성한 그래핀을 전사하였다. 기판 위에 NH2와 BN이 SAMs 형태로 존재하는 것을 접촉각 측정(Contact angle measurement)을 통해 확인하였고, 그 결과 NH2와 BN에 의해 그래핀에 도핑 효과가 나타난 것을 라만 분광법(Raman spectroscopy)과 X-선 광전자 분광법(X-ray photoelectron spectroscopy: XPS)을 이용하여 확인하였다. 본 연구 결과는 안정적이면서 패턴이 가능하기 때문에 그래핀을 기반으로 하는 반도체 소자에 적용 가능할 것이라 예상된다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.30 no.1
• /
• pp.33-39
• /
• 2020

Lightweight geopolymers were fabricated by using fused slag from integrated gasification combined cycle as a law material and Si sludge from silicon wafer process as a bloating material for the purpose of replacing autoclaved lightweight concrete (ALC). Density and compressive strength of geopolymers were measured and compared with the properties of ALC according to the variation of mol concentration of alkaline activator, W/S ratio, addition of fibers, and addition of polystyrene and the possibility of replacing ALC panel was estimated through the comparisons. Although the geopolymer satisfying the standard of ALC panel was not made by controlling mol concentration and W/S ratio, addition of inserts such as fibers and polystyrene insert was tried to overcome the obstacle of enhancing properties. Geopolymers cannot satisfying the standard of ALC panel by adding carbon or glass fibers; however, adding fibers can be suggested as one of the methods enhancing compressive strength because the compressive strength of the specimen containing 0.3 wt.% glass fibers was increased by 3 times. The maximum addition of polystyrene insert was turned out to be 50 vol.% and the properties of geopolymers varied by the method of insertion. When using single polystyrene insert, compressive strength was 17.8 MPa and density was 0.996 g/㎤ which were similar values to the standard of ALC panel. If the difficulties of reproductivity of production and insertion method of inserts were overcome through the future research, the geopolymers containing polystyrene inserts could possibly replace ALC panel.

• 한국신재생에너지학회:학술대회논문집
• /
• 2011.05a
• /
• pp.105.2-105.2
• /
• 2011

화비정질 실리콘의 빛에 의한 노화현상 (light-induced degradation; LID)은 이미 1977년 보고된 Staebler-Wronski 효과에 의해서 확인된 바 있다. 이는 비정질 실리콘이 빛에 노출될 때, 이미 포함되어 있는 수소원자가 빛 에너지에 의해서 이동하게 되고, 이로 인해서 생성 또는 소멸되는 댕글링 본드 때문에 일어난다. 특히, 일상적인 태양광의 노출 하에서 태양전지의 장시간 성능을 예측하는데 물리적인 이해의 부족 및 기술 환경적인 어려움이 있고, 이러한 요인들은 안정된 태양전지를 개발하는데 장해요인으로 나타난다. 그러므로 비정질 실리콘 태양전지가 장시간 태양광에 노출되어 시간이 지남에 따라서 "성능이 어떻게 변하는지?" 그리고 "이에 대한 원인은 무엇인지?" 등은 여전히 과학적으로 풀어야할 숙제로 남아있다. 본 논문에서는 비정질 실리콘으로 구성된 태양전지가 태양광에 노출될 때 시간이 지남에 따라서 (1) 성능이 어떻게 변하는지, (2) LID의 변화는 언제 안정화되는지, 그리고 (3) 성능변화에 대한 원인은 무엇인지에 대해서 논의한다. 본 논문은 장시간 빛에 노출되는 비정질 실리콘 태양전지의 성능예측에 관해서 연구하였다. 결함밀도의 운동학적 모형을 통해서 태양광 노출에 대한 태양전지 성능변화를 예측하는데 초점을 맞추었고, 이를 위해서 태양전지에 조사되는 태양광 세기, 주변온도, 등이 고려되었다. 특히, 전하운반자의 수명이 결함밀도에 의해서 결정되기 때문에 비정질 실리콘 태양전지의 빛에 대한 노화현상 (LID)이 확장지수함수 (stretched-exponential) 완화법칙을 따르는 결함밀도에 의해서 물리적으로 설명된다. 한편 이와 같은 물리적 계산의 유용성을 확인하기 위해서 동일한 태양전지에 대해서 AMPS-1D 컴퓨터 프로그램을 사용하였고, 이를 통해서 비정질 실리콘 태양전지의 빛에 대한 노화현상을 물리적 및 정량적으로 이해하였다. 본 연구에 적용되는 태양전지는 비정질 실리콘으로 구성된 pin 구조 (glass/$SnO_2$/a-SiC:H:B/a-Si:H/a-Si:H:P/ITO)로서 다음과 같은 특성을 갖는다: 에너지 띠간격~1.72 eV, 두께~400 nm, 내부전위~1.05 V, 초기 fill factor~0.71, 초기 단락전류~16.4 mA/$cm^2$, 초기 개방전압 0.90 V, 초기 변환효율 10.6 %. 우리는 이와 같은 연구를 통해서 과학적으로 비정질 실리콘의 빛에 의한 노화현상을 이해하고, 기술적으로 효율 및 경제성이 높은 태양전지의 개발에 도전한다.

• Journal of Energy Engineering
• /
• v.2 no.3
• /
• pp.258-267
• /
• 1993

A mathematical model has been developed to describe heat transfer phenomena in a PCM (phase change material) module for development of an energy recovery system. The PCM module, melting point of which is around 1673 K, consists of silicon(96.8%), aluminium(2.7%) and marginal amounts of impurities such as Ca, Fe and Ti. The module is covered by a capsule that consists of SiC(58%) and graphite(42%). Physical properties that are required for model predictions were cited from the references. The apparent capacity method and the postiterative method wert used in the mathematical model to describe the phase changing mechanism. Temperature and velocity of fluid are the major variables in the model calculation. For the gas temperature of 1773 K that simulates real operating conditions, the prediction shows that PCM is rapidly melted to axial direction. However, for the gas temperature of 3000 K that is higher than the real conditions, PCM is melted rapidly to the radial direction. The gas velocity has no influence on the melting phenomena of the PCM except when the gas velocity is relatively low. At the low gas velocity asymmetry of the temperature profiles in PCM is obtained.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.2
• /
• pp.114-121
• /
• 2001

A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.1
• /
• pp.20-26
• /
• 2001

Titanium boride ($\textrn{TiB}_{x}$) films were deposited on (100) silicon substrates at the substrate temperature of $500^{\circ}C$ by means of the co-evaporation of titanium and boron evaporants during deposition. The co-evaporation method makes it possible to deposit the non-stoichiometric films with different boron-to-titanium ratio($0{\le}B/Ti \le 2.5$). The resistivity increases linearly as the boron-to-titanium ratio in the as-deposited films is increased. The surface roughness of $\textrn{TiB}_{x}$ films is changed as a function of the boron-to-titanium ratio. The XRD spectrum for pure titanium film shows a highly (002) preferred orientation. For B/Ti=0.59 ratio only a single TiB phase that shows a (111) preferred orientation is observed. However, the $\textrn{TiB}_{x}$ phase with the hexagonal structure of the $AlB_2$(C32) type appears as the boron concentration increase, and only a single $\textrn{TiB}_{x}$ phase is observed for $B/Ti \ge 2.0$ ratio. The $\textrn{TiB}_{x}$/Si samples reveal a tensile stress (3~$20{\times}^9$dyn/$\textrm{cm}^2$) in the overall composition of the films, although the magnitude of the residual stresses is depended on the nominal B/Ti ratio.

• Applied Chemistry for Engineering
• /
• v.7 no.1
• /
• pp.91-100
• /
• 1996

Condensed ethyl silicate(CES) solutions were prepared from $SiCl_4$ and ethanol which is different in water content(2.5, 5.0 and 7.0wt.% ). To investigate the sol-gel transition behaviors of CES and PHT(partially hydrolyzed TEOS) solutions, the measurement of volume change, density, $SiO_2$ content, intrinsic viscosity and number average molecular weight were conducted with elapsed time. The polymer shapes of CES were discussed from the relation between the intrinsic viscosity[$\eta$] and the number average molecular weight($\bar{Mn}$). CES-3 prepared from ethanol containing 7.0wt.% $H_2O$ had different sol-gel transition behaviors from CES-1 (2.5wt.% $H_2O$) and CES-2(5.Owt.% $H_2O$), but similar behaviors to those of PHT which is used for controlling the hydrolysis rata of TEOS when composite ceramic materials were manufactured from silicon alkoxides. On the basis of Mark-Hawink relation, $[{\eta}]=K\bar{Mn}^{{\alpha}}$, the polymer shape of CES solutions were determined linear siloxane polymers because all solutions had ${\alpha}$ values in the range from 0.53 to 0.84. Especially, CES-3 showed to be a favorable raw materials for composite ceramics due to its similar properties to those of PHT.

• Journal of Periodontal and Implant Science
• /
• v.39 no.sup2
• /
• pp.223-230
• /
• 2009

Purpose: Synthetic bone products such as biphasic calcium phosphate (BCP) are mixtures of hydroxyapatite (HA) and ${\beta}$-tricalcium phosphate (${\beta}$- TCP). In periodontal therapies and implant treatments, BCP provides to be a good bone reconstructive material since it has a similar chemical composition to biological bone apatites. The purpose of this study was to compare bone regeneration capacity of two commercially available BCP. Methods: Calvarial defects were prepared in sixteen 9-20 months old New Zealand White male rabbits. BCP with HA and ${\beta}$- TCP (70:30) and BCP with Silicon-substituted hydroxyapatite (Si-HA) and ${\beta}$-TCP (60:40) particles were filled in each defect. Control defects were filled with only blood clots. Animals were sacrificed at 4 and 8 week postoperatively. Histomorphometric analysis was performed. Results: BCP with HAand ${\beta}$- TCP 8 weeks group and BCP with Si-HA and ${\beta}$- TCP 4 and 8 weeks groups showed statistically significant in crease (P <0.05) in augmented area than control group. Newly formed bone area after 4 and 8 weeks was similar among all the groups. Residual materials were slightly more evident in BCP with HA and ${\beta}$- TCP 8 weeks group. Conclusions: Based on histological results, BCP with HA and ${\beta}$- TCP and BCP with Si-HA and ${\beta}$- TCP appears to demonstrate acceptable space maintaining capacity and elicit significant new bone formation when compared to natural bone healing in 4 and 8 week periods.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.170-170
• /
• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.