• Title/Summary/Keyword: Shunt current

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Characteristics of Matrix Type SFCL with $2{\times}3$ Array According to the Trigger Coil and Shunt Resistance ($2{\times}3$구조의 매트릭스형 초전도 한류기의 트리거 코일 및 션트 저항에 따른 특성)

  • Jung, Byung-Ik;Choi, Hyo-Sang
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.58 no.1
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    • pp.85-89
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    • 2009
  • We investigated the quench characteristics in accordance with increase of turns number of trigger coil and shunt resistance of matrix-type superconducting fault current limiter (SFCL) with $2{\times}3$ array. The matrix-type SFCL consists of the trigger part to apply magnetic field and the current-limiting part to limit fault current. The fault current limiting characteristics according to the increase of magnetic field and applied voltage were nearly same. This is because the application of magnetic field hasn't an affect on total impedance of the SFCL. When turns number of a reactor increased, the voltage difference between two superconducting units in the current-limiting part according was decreased. The resistance difference generated in two superconducting units was also decreased. Therefore, we confirmed that the differences of the critical behaviors between superconducting units were reduced by application of magnetic field. By this results, we could decide the optimum turns number of reactor to apply magnetic field.

Characterization of EFG Si Solar Cells

  • Park, S.H.
    • Journal of Sensor Science and Technology
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    • v.5 no.5
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    • pp.1-10
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    • 1996
  • Solar cells made of the edge-defined film-fed growth Si are characterized using current-voltage, surface photovoltage, electron beam induced current, electron microprobe, scanning electron microscopy, and electron backscattering. The weak temperature dependence of the I-V curves in the EFG solar cells is due to a voltage variable shunt resistance giving higher diode ideality factors than the ideal one. The voltage variable shunt resistance is modeled by a modified recombination mechanism which includes carrier tunneling to distributed impurity energy states in the band gap within the space-charge region. The junction integrity and the substrate quality are characterized simultaneously by combining I-V and surface photovoltage (SPV) measurements. The diode ideality factors and the surface photovoltages characterize the junction integrity while the SPV diffusion lengths characterizes the substrate quality. Most of the measured samples show the voltage variable shunt resistance although how serious it is depends on the solar cell efficiency. The voltage variable shunt resistance is understood as one of the most important factors of the degradation of EFG solar cells.

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Novel Current Compensation Technique for Harmonic Current Elimination (고조파 전류 제거를 위한 새로운 전류 보상 기법)

  • Jeong Gang-Youl
    • Proceedings of the KIPE Conference
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    • 2004.07b
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    • pp.587-591
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    • 2004
  • This paper proposes a novel current compensation technique that can eliminate the harmonic currents included in line currents without computation of harmonic current components. A current controller with fast dynamics for an active filter is described. Harmonic currents are directly controlled without the need for sensing and computing the harmonic current of the load current, thus simplifying the control system. Current compensation is done in the time domain, allowing a fast time response. The DC voltage control loop keeps the voltage across the DC capacitor constant. High power factor control by an active filter is described. All control functions are implemented in software using a single-chip microcontroller, thus simplifying the control circuit. Any current-controlled synchronous rectifier can be used as a shunt active filter through only the simple modification of the software and the addition of current sensors. It is shown through experimental results that the proposed controller gives good performance for the shunt active filter.

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Power Flow Control of Thyristor Controlled Shunt Compensator (싸이리스터 제어 병렬 보상기에 의한 전력 제어 연구)

  • 정교범
    • Proceedings of the KIPE Conference
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    • 1999.07a
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    • pp.680-683
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    • 1999
  • A thyristor controlled shunt compensator, which is installed in the middle of the transmission line is adopted for controlling real power flow in a simple power transmission system. By means on the Fourier series representation of the thyristor switching action and the system parameters, the thyristor current equations are derived, which transmit the required real power of the simple power transmission system and inform the thyristor firing angle, the thyristor conduction angle, the power flows and the harmonic characteristics EMTP simulations at the various operating points show the dynamic characteristics of the thyristor controlled shunt compensator and correspond to the results calculated with the Fourier series representation.

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Analysis of two current feedback methods using shunt resistor (Shunt Resistor을 이용한 두 가지 전류 피드백 방법 분석)

  • Joo, Dong-Myoung;Jo, Won-Je;Shin, Seung-Min;Lee, Byoung-Kuk
    • Proceedings of the KIPE Conference
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    • 2010.11a
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    • pp.318-319
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    • 2010
  • 동기 전동기 구동에서는 정밀한 토크 제어를 위해 벡터 제어가 필요하다. 이를 위해 전류 피드백이 필요하며, 전류를 검출하는 방법으로 1개 또는 3개의 shunt resistor를 사용하여 각각 dc-link 전류 검출 또는 상 전류를 검출하는 것이 있다. 이 전류 검출 방법들의 문제 발생 구간을 분석한다.

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Analysis of Quench Characteristics according to increment of turn number of a reactor and shunt resistors of the Matrix-type Superconductor Fault Current Limiter (매트릭스형 초전도 전류제한기의 리액터의 턴수 및 션트저항 증가에 따른 퀜치특성 분석)

  • Lee, Ju-Hyoung;Oh, Geun-Gon;Jung, Su-Bok;Park, Hyoung-Min;Cho, Young-Sun;Jung, Byoung-Ik;Choi, Hyo-Sang
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2008.05a
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    • pp.332-334
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    • 2008
  • The matrix-type superconducting fault current limiter (SFCL) using YBCO thin film consists of the trigger and current-limiting parts. We fabricated the matrix-type SFCL with the integrated current limiting modules. we carried out the experiment of matrix-type SFCL with the integrated current limiting modules connected in series or parallel. We saw current characteristics due to ratio of change the shunt resistance and turns. We confirmed that the difference of critical current between superconducting units was decreased by increment of current flowing into the reactor which applied the magnetic field into the superconducting units..

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A Four Leg Shunt Active Power Filter Predictive Fuzzy Logic Controller for Low-Voltage Unbalanced-Load Distribution Networks

  • Fahmy, A.M.;Abdelslam, Ahmed K.;Lotfy, Ahmed A.;Hamad, Mostafa;Kotb, Abdelsamee
    • Journal of Power Electronics
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    • v.18 no.2
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    • pp.573-587
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    • 2018
  • Recently evolved power electronics' based domestic/residential appliances have begun to behave as single phase non-linear loads. Performing as voltage/current harmonic sources, those loads when connected to a three phase distribution network contaminate the line current with harmonics in addition to creating a neutral wire current increase. In this paper, an enhanced performance three phase four leg shunt active power filter (SAPF) controller is presented as a solution for this problem. The presented control strategy incorporates a hybrid predictive fuzzy-logic based technique. The predictive part is responsible for the SAPF compensating current generation while the DC-link voltage control is performed by a fuzzy logic technique. Simulations at various loading conditions are carried out to validate the effectiveness of the proposed technique. In addition, an experimental test rig is implemented for practical validation of the of the enhanced performance of the proposed technique.

Resistive shunt with low phase angle under harmonic effect (고조파 영향에 의한 위상 변화가 적은 분류기)

  • Lee, J.H.;Park, Y.T.;Lee, M.M.;Seo, J.H.;Jang, S.M.
    • Proceedings of the KIEE Conference
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    • 1997.07a
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    • pp.285-287
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    • 1997
  • An AC shunt with low phase angle has been designed for an AC current measurement, such as currents with harmonics. This $0.2\;{\Omega}$ shunt of 5 A rated current is composed of fifty $10\;{\Omega}$ metal film resistors and applicable to the frequency band of DC to 1 kHz.

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A Compact Low-Power Shunt Proximity Touch Sensor and Readout for Haptic Function

  • Lee, Yong-Min;Lee, Kye-Shin;Jeong, Taikyeong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.3
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    • pp.380-386
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    • 2016
  • This paper presents a compact and low-power on-chip touch sensor and readout circuit using shunt proximity touch sensor and its design scheme. In the proposed touch sensor readout circuit, the touch panel condition depending on the proximity of the finger is directly converted into the corresponding voltage level without additional signal conditioning procedures. Furthermore, the additional circuitry including the comparator and the flip-flop does not consume any static current, which leads to a low-power design scheme. A new prototype touch sensor readout integrated circuit was fabricated using complementally metal oxide silicon (CMOS) $0.18{\mu}m$ technology with core area of $0.032mm^2$ and total current of $125{\mu}A$. Our measurement result shows that an actual 10.4 inches capacitive type touch screen panel (TSP) can detect the finger size from 0 to 1.52 mm, sharply.