• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.37-44
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• 2013

In order to investigate an influence of carrier trap by quantum dots (QDs) on the solar parameters, in this study, the $p^+-QD-n/n^+$ solar cells with InAs/GaAs QD active layers are fabricated, and their characteristics are investigated and compared with those of a GaAs matrix solar cell (MSC). Two different types of QD structures, the Stranski-Krastanow (SK) QD and the quasi-monolayer (QML) QD, have been introduced for the QD solar cells, and the parameters (open-circuit voltage ($V_{OC}$), short-cirucuit current ($I_{SC}$), fill factor (FF), conversion efficiency (CE)) are determined from the current-voltage characteristic curves under a standard solar illumination (AM1.5). In SK-QSC, while FF of 80.0% is similar to that of MSC (80.3%), $V_{OC}$ and $J_{SC}$ are reduced by 0.03 V and $2.6mA/cm^2$, respectively. CE is lowered by 2.6% as results of reduced $V_{OC}$ and $J_{SC}$, which is due to a carrier trap into QDs. Though another alternative structure of QML-QD to be expected to relieve the carrier trap have been firstly tried for QSC in this study, it shows negative results contrary to our expectations.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.38-45
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• 2006

The superconducting fault current limiters(SFCLs) provide the effect such as enhancement in power system reliability due to limiting the fault current within a few miliseconds. Among various SFCLs we have developed a flux-lock type SFCL and exploited a special design to effectively reduce the fault current according to properly adjustable magnetic field after the short-circuit test. This SFCL consists of two copper coils wound in parallel on the same iron core and a component using the YBCO thin film connected in series to the secondary copper coil. Meanwhile, operating characteristics can be controlled by adjusting the inductances and the winding directions of the coils. To analyze the operational characteristics, we compared closed-loop with open-loop iron core. When the applied voltage was 200[Vrms] in the additive polarity winding, the peak values of the line current the increased up to 30.71[A] in the closed-loop and 32.01[A] in the open-loop iron core, respectively. On the other hand, in the voltages generated at current limiting elements were 220.14[V] in the closed-loop and 142.73[V] in the opal-loop iron core during first-half cycle after fault instant under the same conditions. We confirmed that the open-loop iron core had lower power burden than in the closed-loop iron core. Consequently, we found that the structure of iron core enabled the flux-lock type SFCL at power system to have the flexibility.

• The Korean Journal of Physiology and Pharmacology
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• v.2 no.4
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• pp.521-527
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• 1998

An important property of the intestine is the ability to secrete fluid. The intestinal secretion is regulated by a number of substances including vasoactive intestinal peptide (VIP), ATP and different inflammatory mediators. One of the most important secretagogues is adenosine during inflammation. However, the controversy concerning the underlying mechanism of adenosine-stimulated $Cl^-$ secretion in intestinal epithelial cells still continues. To investigate the effect of adenosine on $Cl^-$ secretion and its underlying mechanism in the rabbit colon mucosa, we measured short circuit current ($I_{SC}$) under automatic voltage clamp with DVC-1000 in a modified Ussing chamber. Adenosine, when added to the basolateral side of the muocsa, increased $I_{SC}$ in a dose-dependent manner. The adenosine-stimulated $I_{SC}$ response was abolished when $Cl^-$ in the bath solution was replaced completely with gluconate. In addition, the $I_{SC}$ response was inhibited by a basolateral Na-K-Cl cotransporter blocker, bumetanide, and by apical $Cl^-$ channel blockers, dephenylamine-2-carboxylate (DPC), 5-nitro-2-(3-phenyl-propylamino)-benzoate (NPPB), glibenclamide. Amiloride, an epithelial $Na^+$ channel blocker, and 4,4-diisothiocyanato-stilbene-2,2-disulphonate (DIDS), a $Ca^{2+}-activated$ $Cl^-$ channel blocker, had no effect. In the mucosa pre-stimulated with forskolin, adenosine did not show any additive effect, whereas carbachol resulted in a synergistic potentiation of the $I_{SC}$ response. The adenosine response was inhibited by 10 ${\mu}M$ H-89, an inhibitor of protein kinase A. These results suggest that the adenosine-stimulated $I_{SC}$ response is mediated by basolateral to apical $Cl^-$ secretion through a cAMP-dependent $Cl^-$ channel. The rank order of potencies of adenosine receptor agonists was $5'-(N-ethylcarboxamino)adenosine(NECA)＞N^6-(R-phenylisopropyl)adenosine(R-$ PIA)＞2-[p-(2-carbonylethyl)-phenyl-ethylamino]-5'-N-ethylcarboxaminoadenosine(CGS21680). From the above results, it can be concluded that adenosine interacts with the $A_{2b}$ adenosine receptor in the rabbit colon mucosa and a cAMP-dependent signalling mechanism underlies the stimulation of $Cl^-$ secretion.

• Korean Journal of Ecology and Environment
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• v.47 no.3
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• pp.225-231
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• 2014

Discharge measurement during flood season is very difficult. Microwave water surface current meter (MWSCM) can measures river surface velocities easily without contacting water. This study introduces its improved version, MWSCM for general use. The existing version of MWSCM is for floods so that its applicable period in a year is short. It has been improved to extend its applicability in a year. The range of measurable velocity for MWSCM for general use is extended so it can be applied during normal flows as well as high flows. MWSCM for general use can measure the velocity range of $0.03{\sim}20.0ms^{-1}$, whereas MWSCM for floods can measure the velocity range of $0.5{\sim}10.0ms^{-1}$. To make such innovation of MWSCM for general use, the applied microwave frequency of MWSCM was changed from 10 GHz to 24 GHz. Waveguide slot array antenna has been designed with the new development of the circuit of transmitting and receiving part. Improvement requests on the existing MWSCM for floods - weight lightening, measured velocity stabilization, self-test, low power consumption, and waterproof and dampproof - from the users of it have been reflected for the development of the new version of MWSCM.

• Fire Science and Engineering
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• v.25 no.6
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• pp.83-88
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• 2011

This study presented the structure and characteristics of vinyl cords used for wiring electric equipment and appliances and analyzed the photographs of damaged flat-type vinyl cords (VFF, $1.25mm^2$) and the metallic cross-sectional structure of melted conductors. Normal VFFs were made by twisting several strands together and the surface of the conductor was red brown. In addition, from the analysis of the metallic structure of the conductor, it was found that its grains had been elongated. The surface of a VFF damaged by normal flame showed no sheen with carbonized insulation material fused on the conductor surface. In addition, from the analysis of the cross-sectional structure of the melted area, it was found that voids of a certain shape were formed on it but that the cord's own elongation structure could not be checked. The cross-sectional analysis of the melted conductor damaged by the external flame applied to a VFF to which electric current was being applied showed no elongation structure for each cord, and revealed that irregular voids and a columnar structure had grown. The surface of the VFF damaged by overcurrent was uniformly carbonized and the cross-sectional structure analysis of the melted conductor revealed that the dendritic structure had grown. The analysis of the characteristics of the VFF melted by short-circuit showed that even though some part of the surface was contaminated, it showed little sheen and that the area rebounded by melting was round in shape. In addition, the cross-sectional structure analysis using a metallurgical microscope showed the boundary surface and columnar structure and revealed an amorphous structure like normal copper at areas other than the melted conductor.

• Membrane Journal
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• v.30 no.4
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• pp.228-241
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• 2020

Separators, which produces physical layer between a cathode and anode, are getting enormous attention as the quality of the separator determines the performance of lithium ion batteries (LIBs). Porous membranes based on polyethylene (PE) and polypropylene (PP) are generally utilized as the separator of LIBs because of their high electrochemical stability and suitable mechanical strength. However, low thermal resistance and wettability of PE and PP membranes limited the potential of LIBs. Operating at the temperature exceeding the melting point of membranes, the separators change their structures which lead to short circuit of LIBs. Low wettability of the separators corresponds to low ionic conductivity which increases the cell resistance. To overcome these weaknesses of PE and PP separators, different types of separator were prepared by co-electrospinning, applying coating layer, forming core shell around membrane, and papermaking method. The synthesized separator greatly enhanced the heat resistance and wettability of separator and mechanical properties like flexibility and tensile strength. In this review different type of polymer membrane used as separator in lithium ion battery are discussed.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.167-174
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• 2005

Smaller size and higher integration of electronic components make smaller gap between metal conducting layers in electronic package. Under harsh environmental conditions (high temperature/humidity), electronic component respond to applied voltages by electrochemically ionization of metal and metal filament formation, which lead to short failure and this phenomenon is termed electrochemical migration(ECM). In this work, printed circuit board(PCB) is used for determination of ECM characteristics. Copper leads of PCB are soldered by eutectic solder alloys. Insulation breakdown time is measured at $85^{\circ}C,\;85{\%}RH$. CAF is the main mechanism of ECM at PCB. Pb is more susceptible to CAF rather than Sn, which corresponds well to the corrosion resistance of solder materials in aqueous environment. Polarization tests in chloride or chloride-free solutions fur pure metal and eutectic solder alloys are performed to understand ECM characteristics. Lifetime results show well defined log-normal distribution which resulted in biased voltage factor(n=2) by voltage scaling. Details on migration mechanism and lifetime statistics will be presented and discussed.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.12 no.2
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• pp.99-107
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• 1998

This dissertationhas confirmed the non-flam mability of cast mold transformer that is increasingly used lately. As a research progress, the investigation has been performed on the installation status and each line of the subway system which have the most mold transformer accidents, and the impediment status of the transformer for rectifier and the high-voltage distribution transformer per each manufacturer. Then, a high voltage mold of the actual mold transformer has been installed in the horiwntal heating furnace and the heat has been applied by the standard heating temperature curve of KSF 2257(Fireproof testing meth od of the construction structures: 1993). Accordingly, the combustibility of the mold transformer based on the test results has been found that 78 minutes has been required for the complete burning per the KSF 2257 combustion test curve and that, after stopping the heat application of the horizontal furnace after ignition, the flame progress has not been made but shown as the self-extinguishing characteristics when the flame progress has been checked. Thus, the non-flammability and self-extinguishability of the mold transformer have been confirmed. The result of this dissertation has indicated that the accident involving mold transformer has been progressed and expanded by the dielectric breakdown or void due to the crack in the mold rather than a fire accident caused by a short-circuit or an overload.r an overload.

• Journal of the Korean Solar Energy Society
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• v.25 no.4
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.