• Title/Summary/Keyword: Short channel effect

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Drain Induced Barrier Lowering of Asymmetric Double Gate MOSFET for Channel Doping Profile (비대칭 DGMOSFET의 도핑분포함수에 따른 DIBL)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.19 no.11
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    • pp.2643-2648
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    • 2015
  • This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

Analysis of Channel Doping Profile Dependent Threshold Voltage Characteristics for Double Gate MOSFET (이중게이트 MOSFET에서 채널도핑분포의 형태에 따른 문턱전압특성분석)

  • Jung, Hak-Kee;Han, Ji-Hyung;Lee, Jae-Hyung;Jeong, Dong-Soo;Lee, Jong-In;Kwon, Oh-Shin
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.6
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    • pp.1338-1342
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    • 2011
  • In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.

Analysis of short-shannel effect for doping concentration of DGMOSFET - On threshold Voltage (더블게이트MOSFET의 도핑농도에 따른 단채널 효과 분석 - 문턱전압을 중심으로)

  • Ko, Hyo-Geun;Han, Ji-Hyung;Jung, Hak-Kee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.05a
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    • pp.731-733
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    • 2012
  • Because the Double gate MOSFET has two gates, it has more efficient on controling current than the exisiting MOSFET, and it can also decrease short channel effects in the nano-device. In this study, during the manufacturing the Double gate MOSFET, we will analyze the change of threshold voltage according to doping concentration that makes a significant impact on short channel effects. One of the structural factors that affect the threshold voltage on the Double gate MOSFET is the doping concentration, and it is very important device parameter. In this paper, we can find that the threshold voltage became larger when the doping concentration increased from $10^{15}cm^{-3}$ to $10^{19}cm^{-3}$.

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Performance Evaluation of Low Rate Wireless Home Network Embedded DSSS System (저속 무선 홈 네트워크 임베디드 DSSS 시스템의 성능 평가)

  • Roh, Jae-Sung
    • Journal of Digital Contents Society
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    • v.7 no.2
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    • pp.103-108
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    • 2006
  • Short-range wireless communication and networking technologies are becoming increasingly important in enabling useful mobile applications. for example, ZigBee technology is expected to provide low cost and low power connectivity for equipment that needs battery life as long as several months to several years. In addition, ZigBee can be implemented in mesh networks larger than is possible with Bluetooth. The main features of this ZigBee standard are network flexibility, low cost, very low power consumption, and low data rate in an adhoc self-organizing network among fixed, portable and moving devices. Home network/Home automation is one of the key market areas for Zigbee, with an example of a simple network This paper investigates the effect of short range wireless channel on the performance of Zigbee system and DSSS-BPSK signal transmission in AWGN, interference and Rician fading environments. And we investigate performance degradation due to interference and fading effects in short range wireless channel. In particular, the impacts of the fading and interference level on the bit error probability is shown in BER performance figures.

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Modeling of Nano-scale FET(Field Effect Transistor : FinFET) (나노-스케일 전계 효과 트랜지스터 모델링 연구 : FinFET)

  • Kim, Ki-Dong;Kwon, Oh-Seob;Seo, Ji-Hyun;Won, Tae-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.6
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    • pp.1-7
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    • 2004
  • We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

Adjoint-Based Observation Impact of Advanced Microwave Sounding Unit-A (AMSU-A) on the Short-Range Forecast in East Asia (수반 모델에 기반한 관측영향 진단법을 이용하여 동아시아 지역의 단기예보에 AMSU-A 자료 동화가 미치는 영향 분석)

  • Kim, Sung-Min;Kim, Hyun Mee
    • Atmosphere
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    • v.27 no.1
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    • pp.93-104
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    • 2017
  • The effect of Advanced Microwave Sounding Unit-A (AMSU-A) observations on the short-range forecast in East Asia (EA) was investigated for the Northern Hemispheric (NH) summer and winter months, using the Forecast Sensitivity to Observations (FSO) method. For both periods, the contribution of radiosonde (TEMP) to the EA forecast was largest, followed by AIRCRAFT, AMSU-A, Infrared Atmospheric Sounding Interferometer (IASI), and the atmospheric motion vector of Communication, Ocean and Meteorological Satellite (COMS) or Multi-functional Transport Satellite (MTSAT). The contribution of AMSU-A sensor was largely originated from the NOAA 19, NOAA 18, and MetOp-A (NOAA 19 and 18) satellites in the NH summer (winter). The contribution of AMSU-A sensor on the MetOp-A (NOAA 18 and 19) satellites was large at 00 and 12 UTC (06 and 18 UTC) analysis times, which was associated with the scanning track of four satellites. The MetOp-A provided the radiance data over the Korea Peninsula in the morning (08:00~11:30 LST), which was important to the morning forecast. In the NH summer, the channel 5 observations on MetOp-A, NOAA 18, 19 along the seaside (along the ridge of the subtropical high) increased (decreased) the forecast error slightly (largely). In the NH winter, the channel 8 observations on NOAA 18 (NOAA 15 and MetOp-A) over the Eastern China (Tibetan Plateau) decreased (increased) the forecast error. The FSO provides useful information on the effect of each AMSU-A sensor on the EA forecasts, which leads guidance to better use of AMSU-A observations for EA regional numerical weather prediction.

A result of prolonged monitoring underwater sound speed in the center of the Yellow Sea (황해 중앙부에서 수중음속의 장기간 모니터링 결과)

  • Kil, Bum-Jun
    • The Journal of the Acoustical Society of Korea
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    • v.40 no.3
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    • pp.183-191
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    • 2021
  • A time-series variation of temperature, salinity, and underwater sound speed was analyzed using an Array for Real-time Geostrophic Oceanography (ARGO) float which autonomously collects temperature and salinity for about 10month with 2 days cycle among 12 floats in the center of the Yellow Sea. As a result, the underwater sound channel appeared below the thermocline as the surface sound channel, which is dominant in the winter season, reduced in April. Besides, for a certain time in the spring season, the sound ray reflected the sea surface frequently due to the short-term temperature inversion effect. Based on the case of successful observation of ARGO float in the shallow water, using prolonged monitoring unmanned platform may contribute to predicting sound transmission loss if the temperature inversion and sound channel including background environment focusing are investigated in the center of the Yellow Sea.

A Study on the Characteristics of Underwater Sound Transmission by Short-term Variation of Sound Speed Profiles in Shallow-Water Channel with Thermocline (수온약층이 존재하는 천해역에서 단기간 음속구조 변화에 따른 음향 신호 전달 변동에 관한 연구)

  • Jeong, Dong-Yeong;Kim, Sea-Moon;Byun, Sung-Hoon;Lim, Yong-Kon
    • The Journal of the Acoustical Society of Korea
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    • v.34 no.1
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    • pp.20-35
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    • 2015
  • Underwater acoustic channel impulse responses (CIR) are influenced by sound speed profile (SSP), and the variation of CIR has significant effects on the performance of underwater acoustic communication systems. A significant change of SSP can occur within a short period, which must be considered during the design of underwater acoustic modems. This paper statistically analyzes the effect of the variation of SSP on the long-range acoustic signal propagation in shallow-water with thermocline using numerical modeling based on the data acquired from JACE13 experiment near Jeju island. The analysis result shows that CIR changes variously according to the SSP and the depth of the transmitter and receiver. We also found that when the transmitter and receiver are deeper, the variation of sound wave propagation pattern is smaller and signal level becomes higher. All CIR obtained in this study show that a series of bottom reflections due to downward refraction and small bottom loss in the shallow water with thermocline can be very important factor for long-range signal transmission and the performance of underwater acoustic communication system in time varying ocean environment can be very sensitive to the variation of SSP even for a short period of time.

Performance Evaluation of a Wireless Home Network in the Presence of Co-Channel Interference (동일채널간섭이 존재하는 홈 네트워크에서의 성능 평가)

  • Roh, Jae-Sung;Ye, Hui-Jin
    • Journal of Digital Contents Society
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    • v.8 no.4
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    • pp.491-497
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    • 2007
  • RPersonal area networking technology is becoming increasingly important in enabling useful wireless home applications. For example, Bluetooth and IEEE 802.11b standards are the most commonly deployed technologies for wireless home applications. However, because both standards share the same unlicensed ISM (Industrial, Scientific, Medical) radio spectrum, severe interference is inevitable and performance can be impaired significantly when heterogeneous devices using the two technologies come into close proximity. In this paper, we research Gaussian FSK Bluetooth system, which is an open specification technology for short-range wireless connectivity between electronic devices. In this paper, we analyzes the effects of co-channel interference on the performance of a Gaussian FSK Bluetooth system. Performance criteria used in the study are the signal to interference power ratio (SIR), interference index, and the bit error rate (BER) in the wireless channel. The effect of co-channel interference from various sources on the performance of a Gaussian FSK Bluetooth system is analyzed using an IGA(Impulsive Gaussian Approximation) method, and these quantities are plotted against Eb/No, $\rho$ and SIR for various channel conditions in figures.

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Analysis of Center Potential and Subthreshold Swing in Junctionless Cylindrical Surrounding Gate and Doube Gate MOSFET (무접합 원통형 및 이중게이트 MOSFET에서 중심전위와 문턱전압이하 스윙 분석)

  • Jung, Hakkee
    • Journal of IKEEE
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    • v.22 no.1
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    • pp.74-79
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    • 2018
  • We analyzed the relationship between center potential and subthreshold swing (SS) of Junctionless Cylindrical Surrounding Gate (JLCSG) and Junctionless Double Gate (JLDG) MOSFET. The SS was obtained using the analytical potential distribution and the center potential, and SSs were compared and investigated according to the change of channel dimension. As a result, we observed that the change in central potential distribution directly affects the SS. As the channel thickness and oxide thickness increased, the SS increased more sensitively in JLDG. Therefore, it was found that JLCSG structure is more effective to reduce the short channel effect of the nano MOSFET.