• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.147-150
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• 2019

There is a need for the development of transparent conductive materials that are economical and environmentally friendly with exhibit low resistivity and high transmittance in the visible spectrum. In this study, the deposition rate and uniformity of Al-doped ZnO-thin films were improved by changing the Z-motion of the sputtering system. The deposition rate and the uniformity were determined to be 3.44 nm/min and 1.23%, respectively, under the 10 mm Z-motion condition. During $O_2$ plasma treatment, the intrusion-type metal elements in the thin film were reduced, which contributed to an oxygen vacancy reduction in addition to structural stabilization. Moreover, the sheet resistance was more easily saturated.

• New & Renewable Energy
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• v.4 no.2
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• pp.74-80
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• 2008

To improve the blue responses of screen-printed single crystalline silicon solar cells, we investigated an emitter etch-back technique to obtain high emitter sheet resistances, where the defective dead layer on the emitter surface was etched and became thinner as the etch-back time increased, resulting in the monotonous increase of short circuit current and open circuit voltage. We found that an optimal etch-back time should be determined to achieve the maximal performance enhancement because of fill factor decrease due to a series resistance increment mainly affected by contact and lateral resistance in this case. To elucidate the reason for the fill factor decrease, we studied the resistance analysis by potential mapping to determine the contact and the lateral series resistance. As a result, we found that the fill factor decrease was attributed to the relatively fast increase of contact resistance due to the dead layer thinning down with the lowest contact resistivity when the emitter was contacted with screen-printed silver electrode.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.390-393
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• 2008

To improve the blue responses of screen-printed single crystalline silicon solar cells, we investigated an emitter etch-back technique to obtain high emitter sheet resistances, where the defective dead layer on the emitter surface was etched and became thinner as the etch-back time increased, resulting in the monotonous increase of short circuit current and open circuit voltage. We found that an optimal etch-back time should be determined to achieve the maximal performance enhancement because of fill factor decrease due to a series resistance increment mainly affected by contact and lateral resistance in this case. To elucidate the reason for the fill factor decrease, we studied the resistance analysis by potential mapping to determine the contact and the lateral series resistance. As a result, we found that the fill factor decrease was attributed to the relatively fast increase of contact resistance due to the dead layer thinning down with the lowest contact resistivity when the emitter was contacted with screen-printed silver electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.833-839
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• 2005

This work describes the effect of the number of roll pressing and the composition of carbon black on the electric and mechanical properties of carbon-PTFE electrode, in which composition is MSP20 : carbon black : $PTFE\;=\;95-X\;:\;X\;:\;5wt.\%$. It was found that the best electric and mechanical properties were obtained for sheet electrode roll pressed about 15 times and for sheet electrode, in which composition is MSP20 : carton black $PTFE\;=\;80\;:\;15\;:\;5wt.\%$. These behaviors could be explained by the network structure of PTFE fibrils and conducting Paths linked with carbon blacks, respectively. On the other hand, cell capacitor using the sheet electrode with $15wt.\%$ of carbon black attached on aluminum current collector with the electric conductive adhesive, in composition is carbon black $CMC\;=\;70\;:\;30wt.\%$, has exhibited the best rate capability between $0.5\;mA/cm^2\~100\;mA/cm^2$ current density and the lowest ESR.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.355-356
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• 2006

This work describes the effect of the number of roll pressing and the composition of carbon black on the electric and mechanical properties of carbon-PTFE electrode, in which composition is MSP20 : carbon black: PTFE = 95-X : X : 5 wt.%. It was found that the best electric and mechanical properties were obtained for sheet electrode roll pressed about 15 times and for sheet electrode, in which composition is MSP20 carbon black : PTFE = 80 : 15 : 5 wt%. These behaviors could be explained by the network structure of PTFE fibrils and conducting paths linked with carbon blacks, respectively. On the other hand, cell capacitor using the sheet electrode with 15 wt.% of carbon black attached on aluminum current collector with the electric conductive adhesive, in composition is carbon black : CMC = 70 : 30 wt.%, has exhibited the best rate capability between 0.5 $mA/cm^2$ ~ 100 $mA/cm^2$ current density and the lowest ESR.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.233-233
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• 2010

It is important to form the n+ emitter layer for generating electric potential collecting EHP(Electron-Hole Pair). In this paper the formation on the n+ emitter layer of silicon wafer has been made with respect to uniformity of shallow diffusion from a liquid source. The starting material was crystalline silicon wafers of resistivity $0.5{\sim}3\{Omega}{\cdot}cm$, p-type, thickness $200{\mu}m$, direction[100]. The formation of n+ emitter layer from the liquid $POCl_3$ source was carried out for $890^{\circ}C$ in an ambient of $N_2:O_2$::10:1 by volume. And than each conditions are pre-deposition and drive-in time. It has been made uniformity of at least. so, the average of sheet resistance was about 0.12%. In this study, sheet resistance was measured by 4-point prove.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.541-542
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• 2006

This work describes the effect of the number of roll pressing and the composition of carbon black on the electric and mechanical properties of carbon-PTFE electrode, in which composition is MSP 20 : carbon black : PTFE = 95-X : X : 5 wt.%. It was found that the best electric and mechanical properties were obtained for sheet electrode roll pressed about 15 times and for sheet electrode, in which composition is MSP 20 : carbon black : PTFE = 80 : 15 : 5 wt.%. These behaviors could be explained by the network structure of PTFE fibrils and conducting paths linked with carbon blacks, respectively. On the other hand, cell capacitor using the sheet electrode with 15 wt.% of carbon black attached on aluminum current collector with the electric conductive adhesive, in composition is carbon black : CMC = 70 : 30 wt.%, has exhibited the best rate capability between $0.5mA/cm^2{\sim}100mA/cm^2$ current density and the lowest ESR.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.45-50
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• 1998

Platinum-Cobalt alloy thin films were deposited on $Al_{2}O_{3}$ substrate by magnetron cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the $Al_{2}O_{3}$ substrate by lift-off method and investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, annealing temperature and time, and also after annealing these films. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature. At input power of Pt : $4.4\;W/cm^{2}$, Co : $6.91\;W/cm^{2}$, working vacuum of 10 mTorr and annealing conditions of $800^{\circ}C$ and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was $15{\mu}{\Omega}{\cdot}cm$ and $0.5{\Omega}/{\square}$, respectively and the TCR value of Pt-Co alloy thin films with thickness of $3000{\AA}$ were $3740ppm/^{\circ}C$ in the temperature range of $25{\sim}600^{\circ}C$. These results indicate that Pt-Co alloy thin films have potentiality for the RTD temperature sensors.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.43.2-43.2
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• 2011

Single-walled carbon nanotubes (SWCNT) are transparent in the visible and show conductivity comparable to copper, and are environmentally stable. SWCNT films have high flexibility, conductivity and transparency approaching that indium tin oxide (ITO), and can be prepared inexpensively without vacuum equipment. Transparent conducting Films (TCF) of SWCNTs has the potential to replace conventional transparent conducting oxides (TCO, e.g. ITO) in a wide variety of optoelectronic devices, energy conversion and photovoltaic industry. However, the sheet resistance of SWCNT films is still higher than ITO films. A decreased in the resistivity of SWCNT-TCFs would be beneficial for such an application. We fabricated SWCNT sheet with $KAuBr_4$ on PET substrate. Arc-discharge SWCNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWCNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with AuBr4-, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. $HNO_3$ treated SWCNT films with Au nano-particles have the lowest 61 ${\Omega}$/< sheet resistance in the 80% transmittance. Sheet resistance was decreased due to the increase of the hole concentration at the washed SWCNT surface by p-type doping of $AuBr_4{^-}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.292-292
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• 2011

TFT (Thin Film Transistor)에서 공정을 단순화 시키고, 가격을 하락시키기 위해서는 Poly-Si을 대체할 물질이 필요하다. 이 연구에서는 Chalcogenide Material의 하나인 GeTe 박막을 이용하여 TFT Channel으로 사용 가능한 물질인지 알아보기 위하여 Post-Annealing을 한 뒤, 상 변화에 따른 박막의 저항 변화, Carrier Concentration (cm-3)과 Mobility (cm2V-1s-1)의 변화를 알아보았다. Sputtering을 이용하여 증착한 GeTe 100 nm Thin Film 위에 Sputtering을 이용하여 SiO2 5 nm를 Capping Layer로 증착한 후, Post-Annealing을 200$^{\circ}C$, 300$^{\circ}C$, 400$^{\circ}C$, 500$^{\circ}C$로 온도를 변화 시키며 진행하였고, 이로 인하여 GeTe Thin Film에 외부의 영향을 최소화 하였다. 먼저 GeTe Thin Film의 Sheet Resistance를 측정한 결과는 300$^{\circ}C$ 까지 낮은 Sheet Resistance의 거동을 보이며 반면, 400$^{\circ}C$ 이상이 되면 높은 Sheet Resistance의 거동을 보인다. Hall Measurement를 통해, Carrier Concentration과 Mobility를 알아보았다. Carrier Concentration은 온도가 증가하면 1E+19에서 1E+21 까지 증가하며, Mobility는 감소하는 경향을 보인다. 500$^{\circ}C$ Post-Annealed GeTe Thin Film에서는 Resistivity가 상당히 높아 4 Point Probe (Range : 1 mohm/sq~2 Mohm/sq)로 측정이 불가능하다. XRD로 GeTe Thin Film을 분석한 결과 as-grown, 200$^{\circ}C$, 300$^{\circ}C$에서는 Cubic의 결정 구조를 보이며, Sheet Resistance가 급격히 증가한 400$^{\circ}C$, 500$^{\circ}C$에서는 Rhombohedral의 결정구조를 보인다. GeTe Thin Film은 400$^{\circ}C$ 이상의 Post-Annealing 온도에서 cubic 구조에서 Rhombohedral 구조로 상 변화가 일어난다. 위 결과를 통해, 결정 구조의 변화가 GeTe Thin Film의 저항, Carrier Concentration과 Mobility에 밀접한 영향이 미치는 것을 확인하였다.