• Journal of Advanced Marine Engineering and Technology
• /
• v.24 no.6
• /
• pp.61-69
• /
• 2000

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.3
• /
• pp.45-50
• /
• 1999

Copper has been widely used for the electronic parts, and especially spot welded one for the leads of condenser or resistor. However, copper is generally hard to be spot welded because of its low electrical resistivity. For this experiment, Sn-37%Pb solder which has relatively higher resistivity was coated on the Cu-sheet to improve the spot weldability of copper. As the experimental variables welding pressure was varied from 100 to 200kgf, welding time from 20 to 50ms, and welding current from 100 to 2500A. Experimental results showed that the solder coated Cu-sheet can be spot welded under the conditions of 400~2200A welding current, 100~200kgf pressure and 20-50ms welding time. The tensile shear strength of the spot welded joint increased with welding current up to the critical current, and after the critical value decreased with current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.7
• /
• pp.764-769
• /
• 2004

In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.391-394
• /
• 1995

Simultaneous measuring system for permeability and resistivity of magnetic sheets is presented. In this system, the coil impedance is measured when a specimen is inserted between two coils. This system was applied to nickel sheets, iron-nickel alloys and a nickel film.

• Korean Journal of Materials Research
• /
• v.21 no.7
• /
• pp.371-376
• /
• 2011

We report on the effects of $TiO_2$ doping power on the characteristics of multicomponent $TiO_2$-ITO (TITO) electrodes prepared by a multi-target sputtering system with tilted cathode guns. Both as-deposited and annealed TITO electrodes showed linearly increased sheet resistance and resistivity with increasing $TiO_2$ doping power. However, the TITO electrodes exhibited a fairly high optical transmittance regardless of the $TiO_2$ doping power due to the high transparency of the $TiO_2$. Although the annealed TITO showed much lower sheet resistance and resistivity relative to the as-deposited samples, the electrical properties of the annealed samples exhibited similar dependence on the $TiO_2$ power to the as-deposited samples. In addition, it was found that doping of an anatase $TiO_2$ in the ITO electrode prevented the preferred (222) orientation of the TITO electrodes. Although the TITO electrode showed higher sheet resistance and resistivity than that of the pure ITO electrode, it offers a very smooth surface and usage of a low-cost Ti element. It is thus considered a promising multicomponent transparent conducting electrode for cost-efficient flat panel displays and photovoltatics.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.11
• /
• pp.477-482
• /
• 2005

We have investigated volume resistivity and thermal properties showed by changing the content of carbon black which is the component parts of semiconducting shield in underground power transmission cable. Specimens were made of sheet form with the nine of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the preheated oven of both 25$\pm$1[$^{\circ}C$] and 90$\pm$1[$^{\circ}C$]. And specific heat (Cp) and thermal conductivity were measured by Nano Flash Diffusivity and DSC (Differential Scanning Calorimetry). The measurement temperature ranges of specific heat using the BSC was from 20[$^{\circ}C$] to 60[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/min]. And the measurement temperatures of thermal conductivity using Nano Flash Diffusivity were both 25[$^{\circ}C$] and 55[$^{\circ}C$]. Volume resistivity was high according to an increment of the content of carbon black from these experimental results. And specific heat was decreased, while thermal conductivity was increased by an increment of the content of carbon black. And both specific heat and thermal conductivity were increased by heating rate because volume of materials was expanded according to rise in temperature.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.5C no.3
• /
• pp.89-96
• /
• 2005

To improve the mean-life and reliability of power cables, we have investigated the volume resistivity and thermal properties demonstrated by changing the content of carbon black, an additive of the semiconductive shield for underground power transmission. Nine specimens were made of sheet form for measurement. Volume resistivity of the specimens was measured by a volume resistivity meter after 10 minutes in a preheated oven at temperatures of both 25$\pm$1[$^{\circ}C$] and 90$\pm$ 1[$^{\circ}C$]. As well, specific heat (Cp) and thermal conductivity were measured by Nano Flash Diffusivity and DSC (Differential Scanning Calorimetry). The ranges of measurement temperature were from 0[$^{\circ}C$] to 200[$^{\circ}C$], and heating temperature was 4[$^{\circ}C$/min]. From these experimental results, volume resistivity was high according to an increase of the content of carbon black. Specific heat was decreased, while thermal conductivity was increased according to a rise in the content of carbon black. Furthermore, both specific heat and thermal conductivity were increased by heating temperature because the volume of materials was expanded according to a rise in temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.236-237
• /
• 2006

We have investigated volume resistivity showed by changing the content of Carbon nanotube and carbon black which is the component parts of semiconducting shield in underground power transmission cable. Specimens were made of sheet form with the six of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the preheated oven of both $23{\pm}1[^{\circ}C]$ and $90{\pm}1[^{\circ}C]$. The volume resistivity decreased by adding Carbon nanotube and carbon black. Also the volume resistivity had different properties because of PTC/NTC tendencies at between $23[^{\circ}C]$ and $90[^{\circ}C]$. We experimented with electric properties of semiconducting components with fewer Carbon nanotube than carbon black.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.8
• /
• pp.381-386
• /
• 2006

In this study, we have investigated electrical and mechanical properties of semiconducting materials for power cable caused by CNT. Specimens were made of sheet form with the four of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the pre-heated oven of both $23{\pm}\;1\;[^{\circ}C]\;and\;90{\pm}\;1\;[^{\circ}C]$. And stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400[Kgf/Cm2] and 600[%]. From this experimental results, the volume resistivity had different properties because of PTC/NTC tendency at between $23[^{\circ}C]\;and\;90[^{\circ}C]$. Also volume resistivity was low by increasing the content of CNT. It means that a small amount of CNT has a excellent electrical properties. And stress was increased, while strain was decreased by increasing the content of CNT. Thus, we could know that a small amount of CNT has a excellent electrical and mechanical oroperties.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.2
• /
• pp.45-50
• /
• 2005

To improve mean-life and reliability of power cable, in this study, we have investigated electrical properties and stress-strain showing by changing the content of carbon black that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the nine of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the pre-heated oven of both 25±1 [℃] and 90±1 [℃]. And stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400[Kgf/㎠] and 600[%]. In addition tests of stress-strain were progressed by aging specimens in air oven. From this experimental results, volume resistivity was high according to increasing the content of carbon black. And yield stress was increased, while strain was decreased according to increasing the content of carbon black. And stress-strain were decreased some after aging because of oxidation reaction of chemical defect. We could know EEA was excellent more than other specimens from above experimental results.