• Title/Summary/Keyword: Sheet Metal

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Self-Sensing Actuator Using an Ion-Polymer Metal Composite Based on a Neural Network Model (뉴럴네트워크 모델 기반의 IPMC 셀프 센싱 액추에이터)

  • Yoon, Jong-Il;Truong, Dinh Quang;Ahn, Kyoung-Kwan
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.12
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    • pp.1865-1870
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    • 2010
  • We develop an IPMC actuator with self-sensing behavior based on an accurate neural network model (NNM). The supplied voltage and voltage signals measured at two determined points on both sides of the IPMC sheet are used as inputs to the NNM. A CCD laser displacement sensor is installed in the rig for accurate measurement of the IPMC tip displacement that is used as the training output of the proposed NNM. Consequently, the NNM model is used to estimate the IPMC tip displacement; the NNM parameters are optimized by the collected input/output training data. The effectiveness of the model for the IPMC actuator is then verified by modeling results.

A Study on the Development of a Work Operation Process Chart for Smart Distribution Board Fabrication (스마트 분전반 제작을 위한 작업 공정도 개발에 관한 연구)

  • Lee, Byung-Seol;Choi, Chung-Seog
    • Journal of the Korean Society of Safety
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    • v.32 no.3
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    • pp.15-20
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    • 2017
  • This study presented the strength of the materials and parts for smart distribution board fabrication, and developed a work operation process chart for smart distribution board fabrication. This work operation process chart for smart distribution board fabrication complied with SPS-KEMC regulations, and the applicable range and object are less than 1,000 V and 1,000 Hz for the AC distribution board and less than 1,500 V for the DC distribution board. The power supply is 3 phase 4 wires ($3{\Phi}$ 4W), divided into a single phase circuit and a 3 phase circuit. In addition, the circuit was configured so that the leakage current flowing through the distribution line of the load could be monitored in real time by using the sensor module installed at the rear end of the circuit breaker. Therefore, the administrator can easily find the risk factor of the load since engineer can check the leakage current of each distribution line. In addition, if a leakage current greater than standard value flows, it is possible to generate an alarm against a short circuit and cut off the leakage current. The work operation process chart for the smart distribution board fabrication consists of the following steps: raw and subsidiary materials, sheet metal work, tube making, welding, painting, busbar fabrication, assembly and wiring, product inspection, shipment, etc. Moreover, symbols, ${\Delta}$, ${\nabla}$, ${\bigcirc}$, ${\Rightarrow}$, etc. were used according to the type of work and work progress so that workers can easily understand the progress of the work.

Photoreduction of Carbon Dioxide using Graphene Oxide-Titanium Oxide Composite (그래핀 옥사이드와 이산화티타늄 조합을 이용한 이산화탄소의 광환원)

  • Lee, Myung-Kyu;Jang, Jun-Won;Park, Sung-Jik;Park, Jae-Woo
    • Journal of Korean Society on Water Environment
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    • v.32 no.1
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    • pp.46-51
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    • 2016
  • In this study, we synthesized a combination of graphene oxide (GO) and titanium dioxide (TiO2) and confirm that GO can be used for CO2 photoreduction. TiO2 exhibited highly efficient combination with other conventional electric charges generated by these paration phenomenon for suppression of hole-electron recombination. This improved the efficiency of CO2 photoreduction. The synthetic form of GO-TiO2 used in this study was agraphene sheet surrounded by TiO2 powder. Efficiency and stability were enhanced by combination of GO and TiO2. In a CO2 photoreduction experiment, the highest CO conversion rate was 0.652 μmol/g·h in GO10-TiO2 (2.3-fold that of pure TiO2) and the highest CH4 production rate was 0.037 μmol/g·h in GO0.1-TiO2 (2.4-fold that of pure TiO2). GO enhances photocatalytic efficiency by functioning as a support and absorbent, and enabling charge separation. With increasing GO concentration, the CH4 level decreases to~45% due to decreased transfer of electrons. In this study, TiO2 together with GO yielded a different result than the normal doping effect and selective CO2 photoreduction.

A Case of Non-cardiogenic Pulmonary Edema caused by Nitrogen Dioxide Poisoning after Cutting Copper Pipe with an Oxyethylene Torch (산소 에틸렌 토치로 동파이프 절단작업 후 발생한 이산화질소 중독에 의한 비심인성 폐부종 1례)

  • JeGal, Yang-Jin;Ahn, Jong-Joon;Seo, Kwang-Won;Cha, Hee-Jeong;Kwon, Woon-Jung;Kim, Yang-Ho
    • Journal of The Korean Society of Clinical Toxicology
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    • v.4 no.2
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    • pp.175-179
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    • 2006
  • Welders are exposed to a number of hazards including metal fumes, toxic gases, electricity, heat, noise, and radiation such as ultraviolet and infrared light. We encountered a patient who developed non-cardiogenic pulmonary edema within a day after cutting copper pipe with an oxyethylene torch. The patient was a 26-year-old welder. He complained of dyspnea, generalized myalgia, and febrile sensation the following morning. The patient's chest X-ray and chest CT scan showed extensively distributed and ill-defined centrilobular nodules. Both his symptoms and chest X-ray abnormalities improved spontaneously. We attributed the patient's symptoms to non-cardiogenic pulmonary edema due to nitrogen dioxide, reasoning that: 1) the pipe consisted only of copper, according to material safety data sheet (MSDS); 2) a previous report in the literature demonstrated increased nitrogen dioxide levels under similar conditions; 3) the patient's clinical course and radiologic findings were very reminiscent of non-cardiogenic pulmonary edema following accidental exposure to nitrogen dioxide.

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Gas Permeation Characteristics of Silica Membrane Prepared by Ultrasonic Spray Pyrolysis (초음파 분무 열분해법에 의해 합성한 실리카 막의 기체 투과 특성)

  • Lee Kew-Ho;Youn Min-Young;Park Sang-Jin;Lee Dong-Wook;Sea Bongkuk
    • Membrane Journal
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    • v.15 no.2
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    • pp.105-113
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    • 2005
  • Silica membranes were prepared on a porous metal sheet by ultrasonic spray pyrolysis method for gas separation at high temperatures. In order to improve the permselectivity, silica was deposited in the sol-gel derived $silica/\gamma-alumina$ intermediate layer by pyrolysis of tetraethyl orthosilicate (TEOS) at 873 K. The pyrolysis with forced cross flow through the porous wall of the support was very effective in plugging mesopores, Knudsen diffusion regime, that were left unplugged in the membranes. At permeation temperature of 523 K, the silica/alumina composite membrane showed $H_2/N_2$ and water/methanol selectivity as high as 17 and 16, respectively, by molecular sieve effect.

Influence of Blankholding Force and Blank Diameter on the Drawability and Quality of Very Small Cylindrical Cups (극소형 원통컵의 드로잉성과 품질에 미치는 블랭크 홀딩력과 블랭크 직경의 영향)

  • Lee, K.S.;Kim, J.B.;Jung, W.J.;Kim, J.H.
    • Transactions of Materials Processing
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    • v.23 no.8
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    • pp.489-494
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    • 2014
  • Micro forming is an appropriate process to manufacture very small metal parts which can be employed in the field of electronic devices or electrically controlled mechanical systems. The purpose of the current study was to investigate the influences of both blankholding force and blank diameter for the deep drawing of very small cups. It is essential to control the blankholding force because improper force can result in defects such as wrinkles in the flange or cracks in the corner of the drawn cups. In the current study blankholding force was controlled by springs connected to the blankholder of a press die. Exchangeable bushing dies with various die-corner radii were also used. To obtain the limit drawing ratio for each working condition several sizes of circular specimens were prepared using blanking tools. Beryllium copper(C1720) alloy sheet of $50{\mu}m$ thickness was chosen for the experiments. The maximum limit drawing ratio of 2.1 was achieved experimentally for the conditions of the blankholder force(BHF)=5.3kgf and Rd=0.3mm. Both thickness and hardness along the central section of drawn cups were measured and compared for different drawing conditions. It was found that the deviation of measured data in the thickness and hardness distribution increases with increasing blankholder force and blank diameter.

Solar Cell Efficiency Improvement using a Pre-deposition Temperature Optimization in The Solar Cell Doping Process (도핑 공정에서의 Pre-deposition 온도 최적화를 이용한 Solar Cell 효율 개선)

  • Choi, Sung-Jin;Yoo, Jin-Su;Yoo, Kwon-Jong;Han, Kyu-Min;Kwon, Jun-Young;Lee, Hi-Deok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.244-244
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    • 2010
  • Doping process of crystalline silicon solar cell process is very important which is as influential on efficiency of solar. Doping process consists of pre -deposition and diffusion. Each of these processes is important in the process temperature and process time. Through these process conditions variable, p-n junction depth can be controled to low and high. In this paper, we studied a optimized doping pre-deposition temperature for high solar cell efficiency. Using a $200{\mu}m$ thickness multi-crystalline silicon wafer, fixed conditions are texture condition, sheet resistance($50\;{\Omega}/sq$), ARC thickness(80nm), metal formation condition and edge isolation condition. The three variable conditions of pre-deposition temperature are $790^{\circ}C$, $805^{\circ}C$ and $820^{\circ}C$. In the $790^{\circ}C$ pre-deposition temperature, we achieved a best solar cell efficiency of 16.2%. Through this experiment result, we find a high efficiency condition in a low pre-deposition temperature than the high pre-deposition temperature. We optimized a pre-deposition temperature for high solar cell efficiency.

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DC/RF Magnetron Sputtering deposition법에 의한 $TiSi_2$ 박막의 특성연구

  • Lee, Se-Jun;Kim, Du-Soo;Sung, Gyu-Seok;Jung, Woong;Kim, Deuk-Young;Hong, Jong-Sung
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.163-163
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    • 1999
  • MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.

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Investigation of a Novel Rubber-Forming Process Inducing Uniform Surface Pressure for the Fabrication of a Thin Bent Plate with Corrugated Structure (균일압력 유도에 의한 꺾임 구조를 가진 미세주름 박판구조물 성형을 위한 고무성형 공정연구)

  • Kim, Min-Hoon;Park, Sang-Hu;Jeong, Ho-Seung;Cho, Jong-Rae;Ha, Man-Yeung
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.35 no.8
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    • pp.933-940
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    • 2011
  • Thin sheets with a corrugated structure are generally used for the fabrication of heat exchangers for electronics, airplanes, and vehicles. However, it is difficult to fabricate corrugated structures, especially those with a bent angle, using the conventional stamping process because of its intrinsic formation mechanism. We propose a novel rubber-forming process for the effective pressing of the both tilted sides of a plate under the same pressure to form exact corrugated shapes. We use finite element analysis and experiments to study the rubber-forming process parameters, and we evaluate the maximum allowable bent angle for high-quality formation. We show that the proposed method is effective for the fabrication of bent plates with low cost.

Characteristics of ITO/Ag-Pd-Cu/ITO Multilayer Electrodes for High Efficiency Organic Solar Cells

  • Kim, Hyo-Jung;Kang, Sin-Bi;Na, Seok-In;Kim, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.257.1-257.1
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    • 2014
  • We investigated characteristics of ITO/Ag-Pd-Cu (APC)/ITO multilayer electrodes prepared by direct current magnetron sputtering for use as an anode in organic solar cells (OSCs). To optimize electrical properties of ITO/APC/ITO multilayer, we fabricated the ITO/APC/ITO multilayer at a fixed ITO thickness of 30 nm as a function of APC thickness. Compare to the surface of Ag layer on ITO, the APC had a smooth surface morphology. At optimized APC thickness of 12 nm, the ITO/APC/ITO multilayer exhibited a sheet resistance of $6{\Omega}/square$ and optical transmittance of 84.15% at a wavelength of 550 nm which is comparable to conventional ITO/Ag/ITO multilayer. However, the APC-based ITO multilayer showed a higher average transmittance in a visible region than the Ag-based ITO multilayer. The higher average transmittance of ITO/APC/ITO multilayer indicated the multilayer is suitable anode for organic solar cells with P3HT:PCBM active layer. OSCs fabricated on the optimized ITO/ACP/ITO multilayer exhibited a better performance with a fill factor of 64.815%, a short circuit current of $8.107mA/cm^2$, an open circuit voltage of 0.59 V, and power conversion efficiency (3.101%) than OSC with ITO/Ag/ITO multilayer (2.8%).

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