• 제목/요약/키워드: Series switch

검색결과 196건 처리시간 0.026초

단일 보조 스위치를 이용한 ZC-ZVS PWM DC-DC 컨버터 (ZC-ZVS PWM DC-DC Converter using One Auxiliary Switch)

  • 박진민;박영조;서기영;문상필;김영문
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2003년도 학술대회 논문집 전문대학교육위원
    • /
    • pp.158-161
    • /
    • 2003
  • A new soft switching technique that improves performance of the high power factor boost rectifier by reducing switching losses is introduced. The losses are reduced by air active snubber which consists of an inductor, a capacitor a rectifier, and an auxiliary switch. Since the boost switch turns off with zero current, this technique is well suited for implementations with insulated gate bipolar transistors. The reverse recovery related losses of the rectifier are also reduced by the snubber inductor which is connected in series with the boost switch and the boost rectifier. In addition, the auxiliary switch operates with zero voltage switching. A complete design procedure and extensive performance evaluation of the proposed active snubber using a 1.2[kW] high power factor boost rectifier operating from a $90[V_{rms}]$ input are also presented.

  • PDF

반도체 소자기반 펄스 전원용 게이트 구동 및 시험회로 설계 (Design of gate driver and test circuits for solid-state pulsed power modulator)

  • 공지웅;옥승복;안석호;장성록;류홍제
    • 전력전자학회:학술대회논문집
    • /
    • 전력전자학회 2012년도 전력전자학술대회 논문집
    • /
    • pp.230-231
    • /
    • 2012
  • This paper describes a gate driver that operates numerous semiconductor switch in the solide-state pulsed power modulator. the proposed gate driver is designed to receive both the isolated drive-power and the on/off pulse signals through the transformer. Moreover, the IGBT-switch can be quickly turned off by adding protection circuit. Therefore it protects the IGBT-switch from the arc condition that frequently occurs in high-voltage pulse application. To comprehend operating characteristic of each IGBT-switch in pulse output condition, the device consisting of a high efficiency soft-switching capacitor charger and two series stacking IGBT-switch is developed. Finally, the relability of the proposed gate driver and the device for its test are proved through PSpice simulation and experiments.

  • PDF

자동 Error counter를 이용한 RSFQ switch 소자의 Bit Error Rate 측정 (Bit Error Rate measurement of an RSFQ switch by using an automatic error counter)

  • 김세훈;김진영;백승헌;정구락;한택상;강준희
    • 한국초전도ㆍ저온공학회논문지
    • /
    • 제7권1호
    • /
    • pp.21-24
    • /
    • 2005
  • The problem of fluctuation-induced digital errors in a rapid single flux quantum (RSFQ) circuit has been very important issue. So in this experiment, we calculated error rate of RSFQ switch in superconductiyity ALU, The RSFQ switch should have a very low error rate in the optimal bias. We prepared two circuits Placed in parallel. One was a 10 Josephson transmission lines (JTLs) connected in series, and the other was the same circuit but with an RSFQ switch placed in the middle of the 10 JTLs. We used a splitter to feed the same input signal to the both circuits. The outputs of the two circuits were compared with an RSFQ XOR to measure the error rate of the RSFQ switch. By using a computerized bit error rate test setup, we measured the bit error rate of 2.18$\times$$10^{12}$ when the bias to the RSFQ switch was 0.398mh that was quite off from the optimum bias of 0.6mA.

지령충전을 위한 고전압 반도체 스위치 개발 (Development of High-voltage Semiconductor Switch for Command Charging)

  • 박성수;이경태;김상희;박상욱;남상훈
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1999년도 하계학술대회 논문집 E
    • /
    • pp.2189-2191
    • /
    • 1999
  • To improve the reliability of the klystron-modulator systems, the stable operations of the thyratron an important factor of the system are required. The thyratron always has a possibility of self-fire according to the conditions of the applied high voltage and this induces the system fault. Therefore a command charging method was introduced to reduce the applied tim8 of the high voltage into the thyratron. The high voltage switch used in the command charging method is the SCR (1.6 kV, 50A) and consists of 10 SCRs in series to discharge 10 kV. A pulse transformer was used to apply the trigger pulse. The objectives of this research are the fabrication of the semiconductor switch and the study of the experimental result of the operation characteristics of the high voltage semiconductor switch.

  • PDF

Switched Reluctance Motor의 스위칭각 조정에 의한 가변속 구동특성 (Variable speed drive of a Switched Reluctance Motor by adjusting switching angles)

  • 황종규;공관식;황영문
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1993년도 하계학술대회 논문집 B
    • /
    • pp.1026-1029
    • /
    • 1993
  • Inherent speed-torque performance of Switched Reluctance Motor is similar to that of series wound DC motor. Thus, the speed of the motor is extremely regulated according to load torque. For the purpose of controlling the speed and torque of SRM it is necessary to change the applied DC link voltage or the switch-ON and switch-OFF angles which control the phase current of the motor. This paper describes speed-torque characteristics of an integral horse power Switched Reluctance Motor by adjusting the switch-ON and switch-OFF angles. Speed at rated load torque can be regulated by adjusting the switching angles and the control scheme is applied to 2kW, 3 phase, 6/4 SRM.

  • PDF

120kV/70A MOSFETs Switch의 구동회로 개발 (Development of the 120kV/70A High Voltage Switching Circuit with MOSFETs Operated by Simple Gate Drive Unit)

  • 송인호;신현석;최창호
    • 전력전자학회:학술대회논문집
    • /
    • 전력전자학회 2002년도 전력전자학술대회 논문집
    • /
    • pp.707-710
    • /
    • 2002
  • A 120kV/70A high voltage switch has been installed at Korea Atomic Energy Research Institute in Taejon to supply power with Korea Superconducting Tokamak Advanced Research (KSTAR) Neutral Beam Injection (NBI) system. NBI system requires fast cutoff of the power supply voltage for protection of the grid when arc detected and fast turn-on the voltage for sustaining the beam current. Therefore the high voltage switch and arc current detection circuit are important part of the NBI power supply and there are much need for high voltage solid state switches in NBI system and a broad area of applications. This switch consisted of 100 series connected MOSFETs and adopted the proposed simple and reliable gate drive circuit without bias supply, Various results taken during the commissioning phase with a 100kW resistive load and NBI source are shown. This paper presents the detailed design of 120kV/70A high voltage MOSFETs switch and simple gate drive circuit. Problems with the high voltage switch and gate driver and solutions are also presented.

  • PDF

pHEMT 공정을 이용한 저손실, 고전력 4중 대역용 SP6T 스위치 칩의 설계 및 제작 (Design and Fabrication of Low Loss, High Power SP6T Switch Chips for Quad-Band Applications Using pHEMT Process)

  • 권태민;박용민;김동욱
    • 한국전자파학회논문지
    • /
    • 제22권6호
    • /
    • pp.584-597
    • /
    • 2011
  • 본 논문에서는 WIN Semiconductors사의 0.5 ${\mu}m$ PHEMT 공정을 이용하여 GSM/EGSM/DCS/PCS 4중 대역을 위한 저손실, 고전력의 RF SP6T 스위치 칩을 설계, 제작 및 측정하였다. 스위치 특성을 개선시킬 수 있는 최적의 구조를 위해서 series와 series-shunt 구조를 혼용하였고, 칩 크기를 줄이기 위해서 수신단에 공통 트랜지스터 구조를 사용하였다. 또한, 시스템에 사용되는 ON, OFF 상태의 입력 전력을 고려하여 트랜지스터의 게이트 크기와 스택(stack) 수를 결정하였다. 마지막으로 피드 포워드(feed forward) 캐패시터, shunt 캐패시터 그리고 shunt 트랜지스터의 기생 인덕턴스 공진 기법을 적용하여 격리도 및 전력 특성을 개선하였다. 제작된 스위치 칩의 크기는 $1.2{\times}1.5\;mm^2$이며, S 파라미터 측정 결과 삽입 손실은 0.5~1.2 dB, 격리도는 28~36 dB를 보였다. 전력 특성으로는 4 W의 입력 전력에 대해서도 삽입 손실 및 격리도의 특성 변화가 없었으며, 75 dBc 이상의 2차 및 3차 고조파 억제 특성이 확보되었다.

Low Cost and High Performance UPQC with Four-Switch Three-Phase Inverters

  • Trinh, Quoc-Nam;Lee, Hong-Hee
    • Journal of Electrical Engineering and Technology
    • /
    • 제10권3호
    • /
    • pp.1015-1024
    • /
    • 2015
  • This paper introduces a low cost, high efficiency, high performance three-phase unified power quality conditioner (UPQC) by using four-switch three-phase inverters (FSTPIs) and an extra capacitor in the shunt active power filter (APF) side of the UPQC. In the proposed UPQC, both shunt and series APFs are developed by using FSTPIs so that the number of switching devices is reduced from twelve to eight devices. In addition, by inserting an additional capacitor in series with the shunt APF, the DC-link voltage in the proposed UPQC can also be greatly reduced. As a result, the system cost and power loss of the proposed UPQC is significantly minimized thanks to the use of a smaller number of power switches with a lower rating voltage without degrading the compensation performance of the UPQC. Design of passive components for the proposed UPQC to achieve a good performance is presented in detail. In addition, comparisons on power loss, overall system efficiency, compensation performance between the proposed UPQC and the traditional one are also determined in this paper. Simulation and experimental studies are performed to verify the validity of the proposed topology.

간단한 보조회로를 이용한 새로운 IGBT 직렬 구동 기법에 관한 연구 (The study on novel method of IGBTs series connection using simple auxiliary circuit)

  • 백주원;류명효;김성철;이영식;유동욱;김흥근
    • 전력전자학회:학술대회논문집
    • /
    • 전력전자학회 1999년도 전력전자학술대회 논문집
    • /
    • pp.206-209
    • /
    • 1999
  • There exists an acute need for high voltage solid-state-switches in a broad area of applications. With the proposed method using simple voltage balancing circuit with series connected IGBTs, it is realized high voltage semiconductor switches with working voltages of several order kilo-volts. The operation principle of the proposed circuit is explained and analyzed. Transient and static voltage-balancing is tested on a experimenta 3kV/45A switch with four series-connected IGBTs.

  • PDF

대전류화를 위한 새로운 소프트 스위칭 고주파 인버터의 회로 해석 (Analysis of a new Soft-Switching High-Frequency Inverter for High Current)

  • 이은영;라병훈;서기영;권순걸;이현우;곽동걸
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2002년도 하계학술대회 논문집 B
    • /
    • pp.1187-1189
    • /
    • 2002
  • In the case of an existing high frequency inverter is became forced extinction by quick load change, due to be connected with series inductor on switch, it is destroyed or is generated conduction loss by resistance component in reactor. And, In the operation of high current with a soft switching, conduction loss can not neglect. In this paper, for the high current power source, we make sure of soft swtching operation and reducing surge when the forced extinction by using a connected switch with series inductor. Also, we poropos a topology of the half bridge type high frequency inverter that can be realized high amplitude operation of the load current. And, analyze the circuit to decide an opmtial circuit parameter.

  • PDF