• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.1-5
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• 2018

Two-dimensional (2D) niobate-based nanosheets have attracted attention as high-k dielectric materials. We synthesized strontiumsubstituted calcium niobate ($Ca_{0.8}Sr_{1.2}Nb_3O_{10}$) nanosheets by a two-step cation exchange process from $KCa_{0.8}Sr_{1.2}Nb_3O_{10}$ ceramic. The $K^+$ ions were exchanged with $H^+$ ions, and then H+ ions were exchanged with tetrabutylammonium ($TBA^+$) cations. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ nanosheets were then exfoliated, decreasing the electrostatic interaction between each niobate layer. Furthermore, $Ca_2Nb_3O_{10}$ nanosheets were synthesized in same process for comparison. Each exfoliated nanosheet shows a single-crystal phase and has a lateral size of over 100 nm. The nanosheets were deposited on a $Pt/Ti/SiO_2/Si$ substrate by the electrophoretic deposition (EPD) method at 40 V, followed by ultraviolet irradiation of the films in order to remove the remaining $TBA^+$ ions. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ thin film exhibited twice the dielectric permittivity (~60) and lower dielectric loss than $Ca_2Nb_3O_{10}$ thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.486-486
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• 2013

Silicon nanowire devices fabricated by bottom-up methods are attracted due to their electrical, mechanical, and optical properties. Especially, to functionalize the surface of silicon nanowires by molecules has received interests. The changes in the characteristics of the molecules is delivered directly to the surface of the silicon nanowires so that the silicon nanowire can be utilized as an efficient read-out device by using the electronic state change of molecules. The surface treatment of the silicon nanowire with light-sensitive molecules can change its optical characteristics greatly. In this paper, we present the optical response of a SiNW field-effect-transistor (FET) conjugated with porphyrin molecules. We fabricated a SiNW FET and performed porphyrin conjugation on its surface. The characteristic and the optical response of the device shows a large difference after conjugation while there is not much change of the surface in the SEM observation. It attributed to the existence of few layer porphyrin molecules on the SiNW surface and efficient variation of the surface potential of the SiNW due to light irradiation.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.789-792
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• 2003

pMOSFET having 10 ${\mu}um$ thickness Gd layer has been tested to be used as a slow neutron sensor. The total thermal neutron cross section for the Gd is 47,000 barns and the cross section value drops rapidly with increasing neutron energy. When slow neutrons are incident to the Gd layer, the conversion electrons are emitted by the neutron absorption process. The conversion electrons generate electron-hole pairs in the $SiO_2$ layer of the pMOSFET. The holes are easily trapped in Oxide and act as positive charge centers in the $SiO_2$ layer. Due to the induced positive charges, the threshold turn-on voltage of the pMOSFET is changed. We have found that the voltage change is proportional to the accumulated slow neutron dose, therefore the pMOSFET having a Gd nuclear reaction layer can be used for a slow neutron dosimeter. The Gd-pMOSFET were tested at HANARO neutron beam port and $^{60}CO$ irradiation facility to investigate slow neutron response and gamma response respectively. Also the pMOSFET without Gd layer were tested at same conditions to compare the characteristics to the Gd-pMOSFET. From the result, we have concluded that the Gd-pMOSFET is very sensitive to the slow neutron and can be used as a slow neutron dosimeter. It can also be used in a mixed radiation field by subtracting the voltage change value of a pMOSFET without Gd from the value of the Gd-pMOSFET.

• Journal of the Korean Society of Radiology
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• v.10 no.8
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• pp.565-569
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• 2016

Recently, a use of linear accelerator with a multi-leaf collimator(MLC) for radiation therapy is increasing. The importance of quality assurance (QA) for the linear accelerator is emphasized as the side effects of the inaccurate delivery of the radiation beam has been increased according to the high dose irradiation technique. In this study, The $HgI_2$ and $PbI_2$ photoconductor layer samples of $400{\mu}m$ thickness were fabricated using sedimentation method among particle-in-binder technology. From the fabricated samples, the electrical properties(dark current, output current, response properties and linearity) were investigated. From the experimental results, $HgI_2$ has good charge signal generation and linearity. Finally, from the signal response results about various thickness of $HgI_2$ sensor, the signal creation efficiency of $400{\mu}m$ thickness of $HgI_2$ sensor has the highest value and the excellent reproducibility below ${\pm}2.5%$.

• Journal of the Korean Society of Radiology
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• v.16 no.3
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• pp.273-279
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• 2022

In order to reduce the absorbed dose given to the patient during dental radiography, a sensor that inserts a shield into the intraoralsensor was designed. Using the designed sensor, the change in absorbed dose depending on whether or not a shield was used was evaluated. The system used to evaluate the absorbed dose is VEX-S300C from Vatech, and the energy spectrum of X-rays was obtained through SPEKTR simulation based on the irradiation conditions of 65 kV, 3 mA, and 0.15 sec, and the number of photons for each energy was derived. After designing the system through Genat4 Application for Tomographic Emission(GATE) simulation, the energy spectrum obtained was used as a radiation source to calculate the absorbed dose. Lead was used for the shield, and simulations were performed at 0.1 mm thickness intervals from 0.1 mm to 0.5 mm was evaluated. In the case of using an X-ray field with a diameter of 60 mm, the decrease in absorbed dose according to the presence or absence of a shield decreased exponentially as the thickness of the shield increased. In addition, when a 20 mm × 30 mm field was used, the absorbed dose was significantly reduced even when no shield was used, and it was confirmed that the absorbed dose was further reduced when a shield was used.

• Journal of Radiation Protection and Research
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• v.32 no.4
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• pp.158-167
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• 2007

It is required that the neutron dosimetry be present to monitor the reactor vessel throughout its plant life. The Ex-vessel Neutron Dosimetry Systems which consist of sensor sets, radiometric monitors, gradient chains, and support hardware have been installed for 3-Loop plants after a complete withdrawal of all six in-vessel surveillance capsules. The systems have been installed in the reactor cavity annulus in order to characterize the neutron energy spectrum over the beltline region of the reactor vessel. The installed dosimetry were withdrawn and evaluated after a irradiation during one cycle and then compared to the cycle specific neutron transport calculations. The reaction rates from the measurement and calculation were compared and the results show good agreements each other.

• Journal of Biosystems Engineering
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• v.41 no.2
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• pp.138-144
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• 2016

Purpose: Phosphorus is an essential element for water quality control. Excessive amounts of phosphorus causes algal bloom in water, which leads to eutrophication and a decline in water quality. It is necessary to maintain the optimum amount of phosphorus present. During the last decades, various studies have been conducted to determine phosphorus content in water. In this study, we present a comprehensive overview of colorimetric, electrochemical, fluorescence, microfluidic, and remote sensing technologies for the measurement of phosphorus in water, along with their working principles and limitations. Results: The colorimetric techniques determine the concentration of phosphorus through the use of color-generating reagents. This is specific to a single chemical species and inexpensive to use. The electrochemical techniques operate by using a reaction of the analyte of interest to generate an electrical signal that is proportional to the sample analyte concentration. They show a good linear output, good repeatability, and a high detection capacity. The fluorescence technique is a kind of spectroscopic analysis method. The particles in the sample are excited by irradiation at a specific wavelength, emitting radiation of a different wavelength. It is possible to use this for quantitative and qualitative analysis of the target analyte. The microfluidic techniques incorporate several features to control chemical reactions in a micro device of low sample volume and reagent consumption. They are cheap and rapid methods for the detection of phosphorus in water. The remote sensing technique analyzes the sample for the target analyte using an optical technique, but without direct contact. It can cover a wider area than the other techniques mentioned in this review. Conclusion: It is concluded that the sensing technologies reviewed in this study are promising for rapid detection of phosphorus in water. The measurement range and sensitivity of the sensors have been greatly improved recently.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.636-639
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• 2010

ZnO thin films were prepared on a glass substrate by radio frequency (RF) magnetron sputtering without intentional substrate heating and then surfaces of the ZnO films were irradiated with intense electrons in vacuum condition to investigate the effect of electron bombardment on crystallization, surface roughness, morphology and hydrogen gas sensitivity. In XRD pattern, as deposited ZnO films show a higher ZnO (002) peak intensity. However, the peak intensity for ZnO (002) is decreased with increase of electron bombarding energy. Atomic force microscope images show that surface morphology is also dependent on electron bombarding energy. The surface roughness increases due to intense electron bombardment as high as 2.7 nm. The observed optical transmittance means that the films irradiated with intense electron beams at 900 eV show lower transmittance than the others due to their rough surfaces. In addition, ZnO films irradiated by the electron beam at 900 eV show higher hydrogen gas sensitivity than the films that were electron beam irradiated at 450 eV. From XRD pattern and atomic force microscope observations, it is supposed that intense electron bombardment promotes a rough surface due to the intense bombardments and increased gas sensitivity of ZnO films for hydrogen gas. These results suggest that ZnO films irradiated with intense electron beams are promising for practical high performance hydrogen gas sensors.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.1023-1026
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• 2013

The electronic equipment which was exposed to high level pulsed radiation is damaged as Upset, Latchup, and Burnout. Those damages has come from the instantaneous photocurrent from electron-hole pairs generated in itself. Such damages appeared as losses of power in military weapon system or of blackout in aerospace equipment and eventually caused in gross loss of national. In this paper, we have implemented a RDC(Radiation detection and control module) as part of the radiation protection technology of the electronic equipment or devices from the pulsed gamma radiation. The RDC which is composed of pulsed gamma-ray detection sensor, signal processors, and pulse generator is designed to protect the important electronic circuits from the pulse radiation. To verify the functionality of the RDC, LM118s which had damaged by the pulse radiation were tested. The test results showed that the test sample applied with a RDC was worked well in spite of the irradiation of the same pulse radiation. Through the experiments we could confirm that the radiation protection technology implemented with RDC had the functionality of radiation protection to the electronic devices.

• Journal of Sensor Science and Technology
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• v.9 no.4
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• pp.274-280
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• 2000

This paper deals with an experimental study to apply commercial semiconductors to measure radiation dose rate for gamma ray. Since the low cost, small size, high efficiency and ruggedness of silicon photodiodes make them attractive photodetectors, they coulde be effectively used in measuring any radiation such as gamma ray. Most PN photodiodes show that the reverse current increases when the light is increased. Therefore the depletion region of them have influence on the reverse current, so we choose silicon PIN photodiodes with large depletion region. In order to detect radiation dose rate and then, to apply in developing any gamma ray dosimeter, some examinations and experiments were performed to PIN photodiodes in this work. Two kinds of PIN photodiodes, such as NEC's PH302 and SIEMENS's BPW34, were tested in a Co-60 gamma irradiation facility with a semiconductor parameter analyzer. As a result, we found that such PIN photodiodes present good linearity in diode current characteristics with dose rate. Therefore silicon PIN photodiodes could be suitably used in designing gamma ray dosimeters.