• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.533-533
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• 2007

The stress effect of SiGe p-type metal oxide semiconductors field effect transistors(MOSFETs) has been investigated to compare device properties using Si bulk and partially depleted silicon on insulator(PD SOI). The electrical properties in SiGe PD SOI presented enhancements in subthreshold slope and drain induced barrier lowering in comparison to SiGe bulk. The reliability of gate oxides on bulk Si and PD SOI has been evaluated using constant voltage stressing to investigate their breakdown (~ 8.5 V) characteristics. Gate leakage was monitored as a function of voltage stressing time to understand the breakdown phenomena for both structures. Stress induced leakage currents are obtained from I-V measurements at specified stress intervals. The 1/f noise was observed to follow the typical $1/f^{\gamma}$ (${\gamma}\;=\;1$) in SiGe bulk devices, but the abnormal behavior ${\gamma}\;=\;2$ in SiGe PD SOI. The difference of noise frequency exponent is mainly attributed to traps at silicon oxide interfaces. We will discuss stress induced instability in conjunction with the 1/f noise characteristics in detail.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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• pp.21-40
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• 2006

[ ${\Box}$ ] Opportunities for PRAM Nearly ideal memory characteristics Potential for high density & low cost memory ${\Box}$ Technical Challenges Writing current reduction is the most urgent issue. ${\to}$ chalcogenide, programming volume, current density, heat loss control Improvement of writing speed, reliability ${\Box}$ Prospects (PRAM as a Mainstream Memory) Evenn, We have demonstrated 256Mb PRAM Realization of high density and low cost PRAM with good reliability will be key succss factor. We need to develop PRAM specific applications.

• 반도체디스플레이기술학회지
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• 제1권1호
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• pp.29-33
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• 2002

In the flip-chip process, the problem like electric defect or fatigue crack caused by the difference of CTE, between chip and substrate board had occurred. Underfill of flip chip to overcome this defects is noticed as important work developing in whole reliability of chip by protecting the chip against the external shock. In this paper, we introduce the underfill methods using mold and plunge and improvement of process and reliability, and the advantage which can be taken from embodiment of device.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2013년도 전력전자학술대회 논문집
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• pp.397-398
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• 2013

Fairchild Green Mode off line buck switch for low standby power consumption and high reliability is presented. By reducing operating current and optimizing switching frequency, 20mW power consumption is achieved. High performance trans-conductance amplifier and green mode function improve the ripple and regulation in the output voltage. The conventional $FPS^{TM}$ buck and novel Fairchild buck switch are compared to show the improvement of performance. Experimental results are showed using 2W evaluation board.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2007년도 SMT/PCB 기술세미나
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• pp.67-79
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• 2007

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 추계학술대회 논문집
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• pp.401-402
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• 2008

• 한국항행학회논문지
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• 제27권2호
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• pp.235-246
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• 2023

4차 산업혁명 기반에서 인공지능(AI), 전기자동차 및 로봇 등의 급속한 기술발전에 있어 반도체가 핵심성능을 좌우하면서, 반도체 경쟁력이 국가 경쟁력과 직결되는 상황을 맞이하였다. 하지만, 한국 반도체 산업은 메모리 반도체를 제외한 시스템 반도체 분야에서 지속적으로 경쟁력이 약화되어, 본 연구에서 침체기에 빠진 한국 팹리스 시스템 반도체 기업의 성장에서 가장 시급한 세계시장 개척을 위해 새로운 스마트계약 기반 블록체인 거래모델인 F-SBM (Fabless-Smart contract based Blockchain Model)을 제안한다. 본 연구는 새로운 F-SBM 모델을 통해 반도체의 Technology, Economy, Reliability 항목의 스마트 계약 기반 컨소시엄 블록체인을 통해 팹리스 업체의 신규고객 확보방안을 검증하였다. 이는 한국 팹리스 시스템 반도체 산업의 숙원인 세계 시장 개척을 위한 신규고객 확보의 높은 진입장벽이 개선됨과 새로운 성장방안을 도출하였다는 측면에서 큰 의의를 가진다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 B
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• pp.1330-1332
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• 2000

In general, the expected life of power semiconductor elements is known for semi-permanent, but actual characteristics are changed according to the such environment conditions obviously because of using time or operating condition. Specially, in case of using at the power plant it is very important to sustain reliability for power semiconductor which it affect to stop operating condition as deterioration or break. Therefore, we need to apply maintenance technics to got the reliability which is a prediction method of life cycle. This paper shows the result of the analyzed data for element characteristic and effects used practically and we had developed the effective equipment which for diagnostic the semiconductor performance.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권3호
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• pp.107-113
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• 2003

Microelectronics device performance and its reliability are directly related to and controlled by its constituent materials and their microstructure. Specific processes used to form and shape the materials microstructure need to be controlled in order to achieve the ultimate device performance. Examples of front-end and back-end ULSI processes, packaging process, and novel optical storage materials are given to illustrate such process-structure-property-reliability relationship. As more novel materials are introduced to meet the new requirements for device shrinkage, such under-standing is indispensable for future generation process development and reliability assessment.

• 센서학회지
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• 제33권1호
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• pp.56-61
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• 2024

The quality of the display can be managed by effectively managing the temperature generated by the panel during use. Conventional display panels rely on an external reference resistor for temperature monitoring. However, this approach is easily affected by external factors such as temperature variations from the driving circuit and chips. These variations reduce reliability, causing complicated mounting owing to the external chip, and cannot monitor the individual pixel temperatures. However, this issue can be simply and efficiently addressed by integrating temperature sensors during the display panel manufacturing process. In this study, we fabricated and analyzed a temperature sensor integrated into an a-IGZO (amorphous indium-gallium-zinc-oxide) TFT array that was to precisely monitor temperature and prevent the deterioration of OLED display pixels. The temperature sensor was positioned on top of the oxide TFT. Simultaneously, it worked as a light shield layer, contributing to the reliability of the oxide. The characteristics of the array with integrated temperature sensors were measured and analyzed while adjusting the temperature in real-time. By integrating a temperature sensor into the TFT array, monitoring the temperature of the display became easier and more accurate. This study could contribute to managing the lifetime of the display.