• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.96.1-96
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• 1998

• 반도체디스플레이기술학회지
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• 제11권1호
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• pp.41-47
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• 2012

In DSSC, fundamental process conditions of upper electrode were established and low cost-oriented method for TCO layer was proposed. Especially, prominent properties, that is, open-circuit voltage of 500mV or more and short-circuit current of $25mA/cm^2$ were yielded by 2-step sintering of semiconductive powder layer. High efficiency-DSSC was able to fabricate without high cost-semiconductor apparatus in common laboratory conditions.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1047-1050
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• 2009

The two approaches to improve the stability of oxide TFTs are described. First approach is the optimization of device architecture including MIS structure and passivation layer using conventional InGaZnO semiconductor channel layer. Second approach is to develop the new kinds of oxide semiconductor materials, which is very robust and stable against the gate bias stress and thermal stress.

• 반도체디스플레이기술학회지
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• 제12권2호
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• pp.93-98
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• 2013

Nanoimprint lithography (NIL) is a next generation technology for fabrication of micrometer and nanometer scale patterns. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. To successfully imprint a nanosized pattern with the thermal NIL, the process conditions such as temperature and pressure should be appropriately selected. This starts with a clear understanding of polymer material behavior during the thermal NIL process. In this paper, a filling process of the polymer resist into nanometer scale cavities during the thermal NIL at the temperature range, where the polymer resist shows the viscoelastic behaviors with consideration of stress relaxation effect of the polymer. In the simulation, the filling process and the residual layer formation are numerically investigated. And the effects of pressure and temperature on NIL process, specially the residual layer formation are discussed.

• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.57-63
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• 2011

Photovoltaic effect is confirmed in DSSC fabricated under the common conditions. In upper electrodes, validity of ZnO as new TCO material was investigated and an improvement of characteristics in DSSC was tried by control of process conditions at semiconductive powder layer. ZnO thin film showed very high resistivity, therefore efficiency of solar cell was lower than that of conventional ITO-related material. DSSC characteristics was able to improve by thin blocking layer doposited between the TCO and semiconductor layer.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.68-74
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• 2017

Nanoimprint lithography (NIL) is a next generation technology for fabrication of micrometer and nanometer scale patterns. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. Up to now there have been a lot of researches on thermal NIL, but most of them have been focused on polymer deformation in the molding process and there are very few studies on the cooling and demolding process. In this paper a cooling process of the polymer resist in thermal NIL is analyzed with finite element method. The modeling of cooling process for mold, polymer resist and substrate is developed. And the cooling process is numerically investigated with the effects of imprinting temperature and residual layer thickness of polymer resist on stress distribution of the polymer resist. The results show that the lower imprinting temperature, the higher the maximum von Mises stress and that the thicker the residual layer, the greater maximum von Mises stress.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.33-36
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• 2012

In this study, the thickness effects of $Al_2O_3$ layer on the sensing properties of $SiO_2/Al_2O_3$ (OA) stacked membrane were investigated using electrolyte-insulator-semiconductor (EIS) structure for high quality pH sensor. The $Al_2O_3$ layers with a respective thickness of 5 nm, 15 nm, 23 nm, 50 nm, and 100 nm were deposited on the 5-nm-thick $SiO_2$ layers. The electrical characteristics and sensing properties of each OA membranes were investigated using metal-insulator-semiconductor (MIS) and EIS devices, respectively. As a result, the OA stacked membrane with 23-nm-thick $Al_2O_3$ layer shows the excellent characteristics as a sensing membrane of EIS sensor, which can enhance the signal to noise ratio.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.179.1-179.1
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• 2007

• Journal of Information Display
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• 제6권2호
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• pp.16-18
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• 2005

Hybrid insulator pentacene thin film transistors (TFTs) are fabricated with thermally grown oxide and cross-linked polyvinylalcohol (PVA) including surface treatment by dilute ploymethylmethacrylate (PMMA) layer on $n^+$ doped silicon wafer. Through the optimization of $SiO_2$ layer thickness in hybrid insulator structure, carrier mobility is increased to more than 35 times than that of the TFT which has only a gate insulator of $SiO_2$ at the same electric field. The carrier mobility of $1.80cm^2$/V-s, subthreshold swing of 1.81 V/decade, and $I_{on}/I_{off}$ current ratio> $1.10{\times}10^5$ are obtained less than -30 V bias condition. The result is one of the best reported performances of pentacene TFTs with hybrid insulator including cross-linked PVA layer as a gate insulator at relatively low voltage operation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1310-1312
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• 2005

Passivation of organic thin-film transistors (OTFTs) using organic and metal thin-film was presented. Parylene-C and titanium were used as an organic and metal layer, respectively. With the proposed passivation method the degradation of electric parameters of OTFTs was relieved compared with non-passivated devices. Several electric parameters such as on/off current, field-effect mobility, and threshold voltage were shown.