• Proceedings of the Korean Society of Laser Processing Conference
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• 2002.11a
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• pp.65-67
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• 2002

• Korean Journal of Optics and Photonics
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• v.11 no.4
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• pp.265-270
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• 2000

We investigate the effects of the power and wavelength of externally injection seeded light on timing jitter and pulse width in a gain-switched $1.55\mu\textrm{m}$ DFB semiconductor laser by numerical simulation based on the transmission line laser model. As external seeding power increases, the timing jitter decreases and the pulse width increases. The lowest timing jitter is observed when the seed wavelength is aligned with the chirped spectrum center. By external seeding, we can decrease the timing jitter up to 1/2.7 without noticeable increase in pulse width. Our simulation results reasonably well agree with our sampled experiment and the other published papers. This proves the validity of our model to analyze a system based on a semiconductor laser. laser.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.647-650
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• 2006

Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.11-11
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• 1987

• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.11-15
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• 2007

Low-k wafer engraving process has been investigated by using UV pico-second laser with high repetition rate. Wavelength and repetition rate of laser used in this study are 355 nm and 80 MHz, respectively. Main parameters of low-k wafer engraving processes are laser power, work speed, assist gas flow, and protective coating to eliminate debris. Results show that engraving qualities of low-k layer by using a laser with UV pico-second pulse width and high repetition rate had better kerf edge and higher work speed, compared to one by conventional laser with nano-second pulse width and low repletion rate in the range of kHz. Assist gas and protective coating to eliminate debris gave effects on the quality of engraving edge. Total engraving width and depth are obtained less than $20\;{\mu}m$ and $10\;{\mu}m$ at more than 500 mm/sec work speed, respectively. We believe that engraving method by using UV pico-second laser with high repetition rate is useful one to give high work speed in laser material process.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.605-610
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• 2004

Solid propellants allow thrusters to be light-weight, com-pact and robust because they require neither tank nor valve, Moreover, the solid propellant will not leak, spill or slosh. Consequently, the solid propellant thruster is one of the potential candidates for the microthruster. On the other hand, the control of the solid propellant combustion is difficult, since the conventional solid propellant continues to bum until all the stored propellant is consumed. Although particular devices like thrust reverser were designed to control the combustion, these devices were rarely used in the practical rocket motors. These devices rise thruster weight as well as complicate the thruster operation. In this study, a solid propellant microthruster using laser sustained combustion was designed in order to develop a high-efficiency microthruster overcoming the previously-mentioned difficulty. This designed thruster has semiconductor lasers and non-self-combustible solid propellants in addition to the conventional solid propellant thruster. In this designed thruster, the semiconductor laser controls the combustion of the non-self-combustible solid propellant. In order to demonstrate that the solid propellant combustion is controllable with laser, some non-self-combustible solid propellants were irradiated with the laser at a back-pressure of about 1㎪. A 40-W class Neodymium Yttrium Aluminum Garnet (ND:YAG) laser was used as a tentative alternate to the semiconductor laser. This experiment has shown that the solid propellant combustion was controllable with 10- W class laser irradiation.

• Korean Journal of Optics and Photonics
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• v.34 no.6
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• pp.241-247
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• 2023

We examine the spectral characteristics of laser-induced periodic surface structures (LIPSSs) formed on an amorphous silicon film irradiated by a 355-nm nanosecond laser. A Gaussian beam with a diameter of 196 ㎛ is used to perform a two-dimensional raster scan. The laser's pulse number is varied from 190 to 280, and its intensity is adjusted within 100-130 mJ/cm². LIPSSs with a periodicity of approximately 330 nm form on the surface of the Si film, aligned perpendicular to the laser's polarization. Transmission spectra of the samples show dips around 700 nm for transverse electric polarization and around 500 nm for transverse magnetic polarization. The features are investigated with a one-dimensional-grating model using a rigorous coupled-wave analysis. Simulations confirm that the observed dips are due to the resonant modes, depending on the polarization.

• Korean Journal of Optics and Photonics
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• v.10 no.1
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• pp.58-63
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• 1999

A 10 GHz harmonically mode-locked semiconductor-fiber ring laser was implemented using a semiconductor optical amplifier at $1.5\mu\textrm{m}$ The laser pulse has 13~18 ps pulse duration, 0.4~0.6 nm spectral width and was positively chirped. The output pulse with an average power of 4 dBm was compressed to 6.8 ps using 2 km long standard single mode optical fiber.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.219-223
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• 2005

Nowadays laser cutting is the most promising method of cutting FPD(Flat Panel Display) glass in mass-production line. And this method can also be used to cut other brittle materials such as quartz, sapphire, ceramic and semiconductor The concept of this method is shown in picture 1. Laser beam heats glass up to strain point, not to melting point and cooling system chills glass to induce maximun thermal stress in glass surface and then the thermal stress generates micro thermal crack, in other words blind depth of crack, along laser beam and cooling line.

• 제어로봇시스템학회:학술대회논문집
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• 1995.10a
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• pp.299-302
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• 1995

Recently, we proposed a 3-D range-image measuring system for a slowly moving object by mechanically scanning a laser light beam emitted from a self mixing laser diode. In this paper, we introduced that every object moves along a straight line course, which is set diagonally against the semiconductor laser beam so that we can recognize each shape and size parameters of objects separately from the acquired 3-D range-image. We measured a square mesa on a square plane as an object. The measured velocity was 4.44mm/s and 4.63mm/s with an error of 0.56mm/s to 0.37mm/s. And thickness error of the mesa was 0.5mm to 0.6mm, which was obtained from the 3-D range-image of the standstill or moving object with thickness of 17.Omm.