• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 춘계학술대회 발표 논문집
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• pp.80-87
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• 2003

On this study, an End-Effector for the 300mm wafer transfer robot System is newly suggested. It is a mechanical type with $180^{\circ}$ rotating ranges and is composed of 3-point arms, two plate springs and single-axis DC motor. It is controlled by microchip for the DC motor control. To design, relationships on the gripping force and the wafer deformation is analyzed by FEM analysis. Criterion on gripping force of a suggested End-Effector is confirmed as $255 ~ 274g_f$ from experimental results. From experimented results on repeatable position accuracy, gripping force and gripping cycle times in a wafer cleaning system, we confirmed that the suggested End-Effector is well satisfied on the required performance for 300mm wafer transfer robot system.

• 반도체디스플레이기술학회지
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• 제8권2호
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• pp.15-21
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• 2009

Atmospheric pressure plasma equipment was successfully applied to the flip chip BGA manufacturing process to improve the uniformity of flux printing process. The problem was characterized as shrinkage of the printed flux layer due to insufficient surface energy of the flip chip BGA substrate. To improve the hydrophilic characteristics of the flip chip BGA substrate, remote DBD type atmospheric pressure plasma equipment was developed and adapted to the flux print process. The equipment enhanced the surface energy of the substrate to reasonable level and made the flux be distributed over the entire flip chip BGA substrate uniformly. This research was the first adaptation of the atmospheric pressure plasma equipment to the flip chip BGA manufacturing process and a lot of possible applications are supposed to be extended to other PCB manufacturing processes such as organic cleaning, etc.

• 반도체디스플레이기술학회지
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• 제9권2호
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• pp.67-72
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• 2010

Recently increasing application of flash memory in mobile and ubiquitous related devices is due to its non-volatility, fast response time, shock resistance and low power consumption. Following this trend, SSD(Solid State Disk) using multiple flash chips, instead of hard-drive based storage system, started to widely used for its advantageous features. However, flash memory based storage subsystem should resolve the performance bottleneck for writing in perspective of speed and lifetime according to its disadvantageous physical property. In order to provide tangible performance, solutions are studied in aspect of reclaiming of invalid regions by decreasing the number of erasures and distributing the erasures uniformly over the whole memory space as much as possible. In this paper, we study flash memory recycling algorithms with multiple management units and demonstrate that the proposed algorithm provides feasible performance. The proposed method utilizes the partitions of the memory space by utilizing threshold values and reconfigures the management units if necessary. The performance of the proposed policies is evaluated through a number of simulation based experiments.

• 반도체디스플레이기술학회지
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• 제21권4호
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• pp.71-76
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• 2022

We evaluated and developed a 6th generation large-size polisher in the type of face-up and Oscar. We removed the hillocks of the low temperature poly-silicon (LTPS) thin film with this polisher. The surface roughness of LTPS was lowered from 7.9 nm to 0.6 nm after CMP(chemical mechanical polishing). The thickness of the LTPS is measured through reflectance in real time during polishing, and the polishing process is completed according to this thickness. The within glass non-uniformity (WIGNU) was 6.2% and the glass-to-glass non-uniformity (GTGNU) was 2.5%, targeting the LTPS thickness of 400Å. In addition, the residual slurry after the CMP process was removed through the Core Flow PVA Brush and alkaline chemical.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2001년도 춘계학술대회 발표논문집
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• pp.79-81
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• 2001

저압 기상 영역에서 Anhydrous HF 가스와 Methanol vapor를 사용하는 산화막 식각공정을 수행하기 위하여 (1) 반응기 부피의 최소화, (B) 공정압력의 최소화, (3) 고순도 알루미나 Reactor 적용, (4) Cluster화의 개념을 적용한 VPC 장치를 제작하였다. Wafer의 온도, HF의 분압 및 Working Pressure 등의 공정변수에 따른 Oxide Wafer의 식각특성의 변화를 확인하였다. 또한 Etch Uniformity를 향상시키기 위하여 Shower Head 구조를 변경시켜서 실험하였으며, CFD Simulation을 이용하여 Reactor내에서의 HF gas 및 Methanol vapor의 분율을 예측하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.34.2-34.2
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• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.

• 한국재료학회지
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• 제8권5호
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• pp.464-469
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• 1998

HF 세정후 자연 산화막의 존재가 급속 열처리 장비를 이용, 아르곤 분위기에서 열처리할 때 티타늄 실리사이드 형성을 관찰하였다. 고분해능 단면 투과 전자 현미경 관찰 결과 기판 온도가 상온일 때 자연산화막(native oxide)이 존재함을 확인하였으며 기판 온도가 40$0^{\circ}C$일 때는 실리콘 기판과 티타늄 박막의 계면 부위에서 자연산화막, 티타늄 및 실리콘이 혼합된 비정질층이 존재함을 확인하였다. 티타늄을 증착하는 동안 기판 온도를 40$0^{\circ}C$로 유지했을 때는 C54~$TiSi_2$상이 형성되는데 요구되는 급속 열처리(Rapid Thermal Annealing : RTA)온도가 기판 온도를 상오느로 유지 했을 때보다 $100^{\circ}C$정도 감소함을 확인하였다. 이 같은 결과는 산소불순물을 함유한 비정질 층이 핵생성 자리를 제공하여 이 상의 형성이 촉진된다는 사실을 말한다. 기판온도 $400^{\circ}C$에서 형성된 티타늄 실리사이드막의 경우 비저항 $\mu$$\Omega$cm임을 확인하였다.

• 산업경영시스템학회지
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• 제41권1호
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• pp.59-69
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• 2018

The up-to-date business environment for Korean manufacturers is very complex and rapidly changing. Especially, the companies have faced with various changes derived from small quantity batch production, diversification of customer demands, and short life cycles of products. Consequently, the Korean manufacturing companies are in need of more efficient production planning and scheduling techniques. In this paper, the research trend of scheduling techniques is investigated to provide relevant information to researchers in this field. Furthermore, some implications for future researches are presented regarding literatures published in Korea over the last 10 years. This paper presents an entire investigation into Korean research works on scheduling (2,569 papers) that are published from 2007 to 2016. Especially, detailed analysis was carried out in the following three industry : 1) semiconductor, 2) shipbuilding and 3) automobile. In this paper, approaches to scheduling presented in the literature are categorized into the following three categories : 1) application, 2) algorithm, and 3) simulation modeling. First, in the semiconductor industry, scheduling techniques related to semiconductor cleaning processes, photolithography processes, chemical processes, transport and transport equipment have been found to be dominant. Second, the shipbuilding industry is focused on assembly processes, transporter, crane and various existing production management system. On the other hand, the scheduling research of the automobile industry is mainly focused on the vehicle movement routing and procurement supply-chain planning algorithm in terms of logistics. The conclusion of this study are expected to provide many implications for various types of academic and practical follow-up studies related to scheduling in consideration of main characteristics of semiconductor, shipbuilding and automobile industries.

• 청정기술
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• 제4권1호
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• pp.6-23
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• 1998

반도체 산업은 각종 전자지기의 발달로 급격히 성장하였으며 현재는 우리 나라에서도 반도체 산업이 경제에서 큰 비중을 차지하고 있다. 국내외의 환경규제와 환경에 대한 대중의 관심이 높아지면서, 반도체 공정의 안전한 관리와 환경유해성 물질의 배출억제를 위하여 반도체 산업에서의 청정기술의 개발이 시급한 과제가 되고 있다. 청정기술이란 근본적으로 환경유해성 오염물질을 배출하지 않는 기술을 의미하나 이는 지금까지 개발된 기술로는 거의 불가능하다. 따라서 공정 내에서부터 환경유해물질의 배출을 최소화하는 기술도 청정기술의 범위에 포함시킨다. 반도체 공정은 연속적인 화학공정들로 구성되어 있으며 그 과정에서 많은 종류의 환경유해성 오염물질이 배출될 수 있다. 반도체 공정에서 발생하는 오염물질들은 기상 형태의 배가스, 액상 형태의 폐수, 폐기물의 세 가지 형태로 나누어 볼 수 있다. 기상의 오염물질을 억제하기 위한 기술로는 오염물질만을 선택적으로 파괴하거나 오염물질만을 농축하여 공정 내에서 재활용하는 방법, 또는 오염을 유발하는 물질 대신 이를 대체할 수 있는 환경에 안전한 물질을 개발하는 방법 등이 있다. 액상의 오염물질을 저감시키는 기술로는 공정의 최적화를 통하여 오염물질의 양을 최소화하는 방법과 유독한 물질로 구성된 원료를 대체하는 방법 등이 있다. 또한 근본적인 오염원을 제거하기 위하여 화학물질의 사용량 자체를 줄이거나 기상을 이용한 세정 시스템 등의 방법을 사용하는 것도 연구중이다.

• 한국산학기술학회논문지
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• 제6권1호
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• pp.78-82
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• 2005

디스플레이 세정의 개념은 기존의 반도체 세정인 RCA 세정을 근간으로 하고 있으며, 대면적화와 환경친화적인 관점으로 발전하여 왔다. 본 연구에서는 프베이 도표에 근거하여 전리수를 이용하여 입자를 제거할 수 있음을 예측하고 이를 확인하였다. 이 때 연구 대상으로 MgO 분말을 사용하였다. 사용된 전리수는 산화전위가 800 mV 이상이고 pH가 3.1으로 산화상이 강하였다 전리수에 용해되는 MgO 분말의 무게를 pH에 조사하였으며, 250 ml 전리수에 100-500 microgram 범위로 용해됨을 알 수 있었다. 이는 $1E18 ea/cm^3$정도의 용해 물질을 내포하고 있음을 의미하며, 따라서 $1E15 ea/cm^3$ 정도 수준의 불순물을 다루는 디스플레이 세정에 적용할 수 있음을 알 수 있었다. 특기할 것은 전리수는 반도체의 기판인 실리콘 웨이퍼의 자연산화막을 식각하여 표면거칠기를 증가시킴을 처음으로 관찰하였다.