• 제목/요약/키워드: Semiconductor Laser

검색결과 526건 처리시간 0.031초

이득 스위칭 DFB 반도체 레이저에서 외부 광 주입 효과의 수치적 분석 (Numerical analysis on the effects of external light injection seeding in a gain-switched DFB semiconductor laser)

  • 이명우
    • 한국광학회지
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    • 제11권4호
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    • pp.265-270
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    • 2000
  • 이득 스위칭 $1.55\mu\textrm{m}$ UFB 반도체 레이저에서 외부 주입광의 전력과 파장이 시간 지터와 펄스 폭에 미치는 영향을 전송선로 레이저 모델에 기초한 모의 실험을 통하여 분석하였다. 주입 광 전력이 증가함에 따라 시간지터는 감소하고 펄스폭은 증가했으며, 최소 시간 지터는 주입 광의 파장이 첩된 스펙트럼의 중시과 일치할 때에 나타났다. 이에 따라, 외부 광 주입에 의해 펄스 폭의 증가 없이도 시간 지터를 대략 1/2.7배로 감소시킬 수 있었다. 모의 실험 결과는 본 실험결과와는 물론이고 이미 발표된 실험결과와 비교적 잘 일치함을 확인하였으며, 이는 본 모델이 반도체 레이저에 기초한 시스템 분석에 유용함을 입증한다.

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Laser Thermal Processing System for Creation of Low Temperature Polycrystalline Silicon using High Power DPSS Laser and Excimer Laser

  • Kim, Doh-Hoon;Kim, Dae-Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.647-650
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    • 2006
  • Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

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자외선 피코초 레이저를 이용한 Low-k 웨이퍼 인그레이빙 특성에 관한 연구 (A Study of Low-k Wafer Engraving Processes by Using Laser with Pico-second Pulse Width)

  • 문성욱;배한성;홍윤석;남기중;곽노흥
    • 반도체디스플레이기술학회지
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    • 제6권1호
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    • pp.11-15
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    • 2007
  • Low-k wafer engraving process has been investigated by using UV pico-second laser with high repetition rate. Wavelength and repetition rate of laser used in this study are 355 nm and 80 MHz, respectively. Main parameters of low-k wafer engraving processes are laser power, work speed, assist gas flow, and protective coating to eliminate debris. Results show that engraving qualities of low-k layer by using a laser with UV pico-second pulse width and high repetition rate had better kerf edge and higher work speed, compared to one by conventional laser with nano-second pulse width and low repletion rate in the range of kHz. Assist gas and protective coating to eliminate debris gave effects on the quality of engraving edge. Total engraving width and depth are obtained less than $20\;{\mu}m$ and $10\;{\mu}m$ at more than 500 mm/sec work speed, respectively. We believe that engraving method by using UV pico-second laser with high repetition rate is useful one to give high work speed in laser material process.

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Design of a Microthruster using Laser-Sustained Solid Propellant Combustion

  • Kakami, Akira;Masaki, Shinichiro;Horisawa, Hideyuki;Tachibana, Takeshi
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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    • pp.605-610
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    • 2004
  • Solid propellants allow thrusters to be light-weight, com-pact and robust because they require neither tank nor valve, Moreover, the solid propellant will not leak, spill or slosh. Consequently, the solid propellant thruster is one of the potential candidates for the microthruster. On the other hand, the control of the solid propellant combustion is difficult, since the conventional solid propellant continues to bum until all the stored propellant is consumed. Although particular devices like thrust reverser were designed to control the combustion, these devices were rarely used in the practical rocket motors. These devices rise thruster weight as well as complicate the thruster operation. In this study, a solid propellant microthruster using laser sustained combustion was designed in order to develop a high-efficiency microthruster overcoming the previously-mentioned difficulty. This designed thruster has semiconductor lasers and non-self-combustible solid propellants in addition to the conventional solid propellant thruster. In this designed thruster, the semiconductor laser controls the combustion of the non-self-combustible solid propellant. In order to demonstrate that the solid propellant combustion is controllable with laser, some non-self-combustible solid propellants were irradiated with the laser at a back-pressure of about 1㎪. A 40-W class Neodymium Yttrium Aluminum Garnet (ND:YAG) laser was used as a tentative alternate to the semiconductor laser. This experiment has shown that the solid propellant combustion was controllable with 10- W class laser irradiation.

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레이저에 의해 생성된 Si 박막의 주기적 표면 구조에서의 도파모드 공진 연구 (Guided-mode Resonances in Periodic Surface Structures Induced on Si Thin Film by a Laser)

  • 이지혁;이윤주;홍현;조은솔;박지영;김주현;강민진;황의선;정병호
    • 한국광학회지
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    • 제34권6호
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    • pp.241-247
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    • 2023
  • 본 연구에서는 355 nm 파장의 나노초 레이저를 비정질 실리콘 박막에 조사하여 형성된 주기적 laser-induced periodic surface structure (LIPSS) 구조의 분광학적 특성을 연구하였다. 지름 196 ㎛의 가우시안 빔을 단위면적당 레이저 펄스 190-280회, 레이저 빔의 세기는 100-130 mJ/cm2 범위에서 'ㄹ' 자 형태로 2차원 스캔하였다. 그 결과 Si 박막 표면에 ~300 nm 주기의 LIPSS 구조가 레이저 편광에 수직 방향으로 정렬되었다. 시료의 투과율 스펙트럼을 측정하여 transverse-electric 편광과 transverse-magnetic 편광에 대해서 각각 700 nm, 500 nm 근방에서 dip이 관측되었다. 이 현상을 설명하기 위해 1차원 격자구조 모델을 이용하여 rigorous coupled-wave analysis를 이용한 시뮬레이션을 하여 편광에 따른 도파모드 공진에 의한 특성임을 규명하였다.

고차 조화 모드록킹된 반도체-광섬유 레이저 구성과 출력 광펄스의 압축 (Harmonically mode-locked semiconductor-fiber ring laser and the output pulse compression)

  • 김동환
    • 한국광학회지
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    • 제10권1호
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    • pp.58-63
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    • 1999
  • 광반도체 증폭기를 이용하여 $1.5\mu\textrm{m}$파장 영역에서 발전하는 조화 모드 록킹된 10GHz 고리형 반도체-광섬유 레이저를 구현하였다. 레이저 펄스폭은 13~18ps이고, 파장 선폭은 0.4~0.6nm이며, 양으로 주파수 처핑되었다. 2km 길이의 표준단일 모드 광섬우를 이용하여 4dBm의 평균 출력을 갖는 레이저 펄스를 광섬유의 군분산 보상에 의해 펄스폭을 최대 6.8ps까지 압축시켰다.

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레이저를 이용한 LCD 유리 절단 기술

  • 정재용;오대현;유기룡;이천;이우영
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
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    • pp.219-223
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    • 2005
  • Nowadays laser cutting is the most promising method of cutting FPD(Flat Panel Display) glass in mass-production line. And this method can also be used to cut other brittle materials such as quartz, sapphire, ceramic and semiconductor The concept of this method is shown in picture 1. Laser beam heats glass up to strain point, not to melting point and cooling system chills glass to induce maximun thermal stress in glass surface and then the thermal stress generates micro thermal crack, in other words blind depth of crack, along laser beam and cooling line.

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Measurement of 3-D range-image of object diagnolly moving against semiconductor laser light beam

  • Shinohara, Shigenobu;Ichioka, Yoshiyuki;Ikeda, Hiroaki;Yoshida, Hirofumi;Sumi, Masao
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1995년도 Proceedings of the Korea Automation Control Conference, 10th (KACC); Seoul, Korea; 23-25 Oct. 1995
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    • pp.299-302
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    • 1995
  • Recently, we proposed a 3-D range-image measuring system for a slowly moving object by mechanically scanning a laser light beam emitted from a self mixing laser diode. In this paper, we introduced that every object moves along a straight line course, which is set diagonally against the semiconductor laser beam so that we can recognize each shape and size parameters of objects separately from the acquired 3-D range-image. We measured a square mesa on a square plane as an object. The measured velocity was 4.44mm/s and 4.63mm/s with an error of 0.56mm/s to 0.37mm/s. And thickness error of the mesa was 0.5mm to 0.6mm, which was obtained from the 3-D range-image of the standstill or moving object with thickness of 17.Omm.

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