• Title/Summary/Keyword: Semiconductor Cleaning

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Wafer 반송용 End-Effector의 설계 및 파지력 제어에 관한 연구

  • 권오진;최성주;이우영;이강원
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2003.05a
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    • pp.80-87
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    • 2003
  • On this study, an End-Effector for the 300mm wafer transfer robot System is newly suggested. It is a mechanical type with $180^{\circ}$ rotating ranges and is composed of 3-point arms, two plate springs and single-axis DC motor. It is controlled by microchip for the DC motor control. To design, relationships on the gripping force and the wafer deformation is analyzed by FEM analysis. Criterion on gripping force of a suggested End-Effector is confirmed as $255 ~ 274g_f$ from experimental results. From experimented results on repeatable position accuracy, gripping force and gripping cycle times in a wafer cleaning system, we confirmed that the suggested End-Effector is well satisfied on the required performance for 300mm wafer transfer robot system.

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Development of Atmospheric Pressure Plasma Equipment and It's Application to Flip Chip BGA Manufacturing Process (대기압 플라즈마 설비 개발 및 Flip Chip BGA 제조공정 적용)

  • Lee, Ki-Seok;Ryu, Sun-Joong
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.2
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    • pp.15-21
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    • 2009
  • Atmospheric pressure plasma equipment was successfully applied to the flip chip BGA manufacturing process to improve the uniformity of flux printing process. The problem was characterized as shrinkage of the printed flux layer due to insufficient surface energy of the flip chip BGA substrate. To improve the hydrophilic characteristics of the flip chip BGA substrate, remote DBD type atmospheric pressure plasma equipment was developed and adapted to the flux print process. The equipment enhanced the surface energy of the substrate to reasonable level and made the flux be distributed over the entire flip chip BGA substrate uniformly. This research was the first adaptation of the atmospheric pressure plasma equipment to the flip chip BGA manufacturing process and a lot of possible applications are supposed to be extended to other PCB manufacturing processes such as organic cleaning, etc.

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An Optimized File System for SSD (SSD를 위한 최적화 파일시스템)

  • Park, Je-Ho
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.2
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    • pp.67-72
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    • 2010
  • Recently increasing application of flash memory in mobile and ubiquitous related devices is due to its non-volatility, fast response time, shock resistance and low power consumption. Following this trend, SSD(Solid State Disk) using multiple flash chips, instead of hard-drive based storage system, started to widely used for its advantageous features. However, flash memory based storage subsystem should resolve the performance bottleneck for writing in perspective of speed and lifetime according to its disadvantageous physical property. In order to provide tangible performance, solutions are studied in aspect of reclaiming of invalid regions by decreasing the number of erasures and distributing the erasures uniformly over the whole memory space as much as possible. In this paper, we study flash memory recycling algorithms with multiple management units and demonstrate that the proposed algorithm provides feasible performance. The proposed method utilizes the partitions of the memory space by utilizing threshold values and reconfigures the management units if necessary. The performance of the proposed policies is evaluated through a number of simulation based experiments.

Improvement of CMP and Cleaning Process of Large Size OLED LTPS Thin Film Using Oscar Type Polisher (Oscar형 연마기를 이용한 대면적 OLED용 LTPS 박막의 CMP 처리 및 세정 공정 개선)

  • Shim, Gowoon;Lee, Hyuntaek;Song, Jongkook
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.4
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    • pp.71-76
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    • 2022
  • We evaluated and developed a 6th generation large-size polisher in the type of face-up and Oscar. We removed the hillocks of the low temperature poly-silicon (LTPS) thin film with this polisher. The surface roughness of LTPS was lowered from 7.9 nm to 0.6 nm after CMP(chemical mechanical polishing). The thickness of the LTPS is measured through reflectance in real time during polishing, and the polishing process is completed according to this thickness. The within glass non-uniformity (WIGNU) was 6.2% and the glass-to-glass non-uniformity (GTGNU) was 2.5%, targeting the LTPS thickness of 400Å. In addition, the residual slurry after the CMP process was removed through the Core Flow PVA Brush and alkaline chemical.

A Study on the Development of Vapor Phase Cleaning Equipment for Semiconductor Processing (반도체 공정에서의 기상 세정장비 개발에 관한 연구)

  • 박헌휘;이춘수;최승우;함승주
    • Proceedings of the KAIS Fall Conference
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    • 2001.05a
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    • pp.79-81
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    • 2001
  • 저압 기상 영역에서 Anhydrous HF 가스와 Methanol vapor를 사용하는 산화막 식각공정을 수행하기 위하여 (1) 반응기 부피의 최소화, (B) 공정압력의 최소화, (3) 고순도 알루미나 Reactor 적용, (4) Cluster화의 개념을 적용한 VPC 장치를 제작하였다. Wafer의 온도, HF의 분압 및 Working Pressure 등의 공정변수에 따른 Oxide Wafer의 식각특성의 변화를 확인하였다. 또한 Etch Uniformity를 향상시키기 위하여 Shower Head 구조를 변경시켜서 실험하였으며, CFD Simulation을 이용하여 Reactor내에서의 HF gas 및 Methanol vapor의 분율을 예측하였다.

Post Ru CMP Cleaning for Alumina Particle Removal

  • Prasad, Y. Nagendra;Kwon, Tae-Young;Kim, In-Kwon;Park, Jin-Goo
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.34.2-34.2
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    • 2011
  • The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.

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The Effect of Native Oxide on the $TiSi_{2}$ Transformation after HF Cleaning (HF 세정후 자연 산화막의 존재가 티타늄 실리사이드 형성에 미치는 영향)

  • Bae, Jong-Uk;Hyeon, Yeong-Cheol;Yu, Hyun-Kyu;Lee, Jeong-Yong;Nam, Kee-Soo
    • Korean Journal of Materials Research
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    • v.8 no.5
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    • pp.464-469
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    • 1998
  • HF 세정후 자연 산화막의 존재가 급속 열처리 장비를 이용, 아르곤 분위기에서 열처리할 때 티타늄 실리사이드 형성을 관찰하였다. 고분해능 단면 투과 전자 현미경 관찰 결과 기판 온도가 상온일 때 자연산화막(native oxide)이 존재함을 확인하였으며 기판 온도가 40$0^{\circ}C$일 때는 실리콘 기판과 티타늄 박막의 계면 부위에서 자연산화막, 티타늄 및 실리콘이 혼합된 비정질층이 존재함을 확인하였다. 티타늄을 증착하는 동안 기판 온도를 40$0^{\circ}C$로 유지했을 때는 C54~$TiSi_2$상이 형성되는데 요구되는 급속 열처리(Rapid Thermal Annealing : RTA)온도가 기판 온도를 상오느로 유지 했을 때보다 $100^{\circ}C$정도 감소함을 확인하였다. 이 같은 결과는 산소불순물을 함유한 비정질 층이 핵생성 자리를 제공하여 이 상의 형성이 촉진된다는 사실을 말한다. 기판온도 $400^{\circ}C$에서 형성된 티타늄 실리사이드막의 경우 비저항 $\mu$$\Omega$cm임을 확인하였다.

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Research Trends of Scheduling Techniques for Domestic Major Industries (국내 주요 산업별 스케줄링 기법의 연구동향)

  • Lee, Jae-yong;Shin, Moonsoo
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.41 no.1
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    • pp.59-69
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    • 2018
  • The up-to-date business environment for Korean manufacturers is very complex and rapidly changing. Especially, the companies have faced with various changes derived from small quantity batch production, diversification of customer demands, and short life cycles of products. Consequently, the Korean manufacturing companies are in need of more efficient production planning and scheduling techniques. In this paper, the research trend of scheduling techniques is investigated to provide relevant information to researchers in this field. Furthermore, some implications for future researches are presented regarding literatures published in Korea over the last 10 years. This paper presents an entire investigation into Korean research works on scheduling (2,569 papers) that are published from 2007 to 2016. Especially, detailed analysis was carried out in the following three industry : 1) semiconductor, 2) shipbuilding and 3) automobile. In this paper, approaches to scheduling presented in the literature are categorized into the following three categories : 1) application, 2) algorithm, and 3) simulation modeling. First, in the semiconductor industry, scheduling techniques related to semiconductor cleaning processes, photolithography processes, chemical processes, transport and transport equipment have been found to be dominant. Second, the shipbuilding industry is focused on assembly processes, transporter, crane and various existing production management system. On the other hand, the scheduling research of the automobile industry is mainly focused on the vehicle movement routing and procurement supply-chain planning algorithm in terms of logistics. The conclusion of this study are expected to provide many implications for various types of academic and practical follow-up studies related to scheduling in consideration of main characteristics of semiconductor, shipbuilding and automobile industries.

Waste Minimization Technology Trends in Semiconductor Industries (반도체 제조 공정에서의 환경 유해성 배출물 절감 기술 동향)

  • Lee, Hyunjoo;Yi, Jongheop
    • Clean Technology
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    • v.4 no.1
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    • pp.6-23
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    • 1998
  • Recently, semiconductor industry has grown rapidly because of the large demand for electronic devices and equipment. The semiconductor industries have also played an important role on the economic growth in Korea. As the environmental regulations become strict, the proper environmental management and the well-developed waste minimization technologies in semiconductor industries are two of urgent problems to be solved. The semiconductor manufacturing process consists of a series of continuous chemical processes, such as cleaning, oxidation, diffusion, photolithography, etching and film deposition. During the processes, various environmentally hazardous wastes are produced. The wastes may be classified as wastewater, gaseous pollutants, and solid wastes. For waste minimization, the substitution of raw materials and process optimization techniques are used, while the selective destruction technologies of toxic chemicals contained in the wastes have been reported. Also, new technologies have been developed for source reduction and waste reduction, such as reduction of toxic chemical use and substitution of hazardous liquids with gaseous reactants or solvent.

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A New Cleaning Concept for Display Manufacturing Process with Electrolyzed Anode Water (전해 양극수를 이용한 새로운 디스플레이 세정)

  • Ryoo Kunkul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.6 no.1
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    • pp.78-82
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    • 2005
  • Display manufacturing process has adopted RCA cleaning, applying to larger area and coping with environmental issue for last ten years. However, the approaching concept of ozonized, hydrogenised, or electrolyzed water cleaning technologies is within RCA clean paradigm. In this work, only electrolyzed anode water was applied to clean particles and organics as well as metals based on Pourbaix concept, and as a test vehicle, MgO particles were introduced to prove the new concept. The electrolyzed anode water is very oxidative with high oxidation reduction potential (ORP) and low in pH of more than 900 mV and 3.1, respectively. MgO particles were immersed in the anode water and its weight losses due to dissolution were measured with time. Weight losses were in the ranges of 100 to 500 micrograms in 250 ml anode water depending on their ORP and pH. Therefore it was concluded that the cleaning radicals in the anode water was at least in the range of 1 to $5{\times}10^{20}$ ea per 250 ml anode water equivalent to $1{\times}10^{18} ea/cm^2$. Hence it can be assumed that the anode water applied to display cleaning from now on $1{\times}10^{10}$ to $1{\times}10^{15} ea/cm^2$ ranges of contaminants are being treated. In addition, it was observed that anode water did not develop micro-roughness on hydrophobic surface while it did on the native silicon oxide.

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