• Title/Summary/Keyword: Semi-conductivity

Search Result 82, Processing Time 0.02 seconds

Growth and optical conductivity properties for BaIn2S4 single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)법에 의한 BaIn2S4 단결정 박막 성장과 광전도 특성)

  • Jeong, Kyunga;Hong, Kwangjoon
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.25 no.5
    • /
    • pp.173-181
    • /
    • 2015
  • A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

An Optimization Study on a Low-temperature De-NOx Catalyst Coated on Metallic Monolith for Steel Plant Applications (제철소 적용을 위한 저온형 금속지지체 탈질 코팅촉매 최적화 연구)

  • Lee, Chul-Ho;Choi, Jae Hyung;Kim, Myeong Soo;Seo, Byeong Han;Kang, Cheul Hui;Lim, Dong-Ha
    • Clean Technology
    • /
    • v.27 no.4
    • /
    • pp.332-340
    • /
    • 2021
  • With the recent reinforcement of emission standards, it is necessary to make efforts to reduce NOx from air pollutant-emitting workplaces. The NOx reduction method mainly used in industrial facilities is selective catalytic reduction (SCR), and the most commercial SCR catalyst is the ceramic honeycomb catalyst. This study was carried out to reduce the NOx emitted from steel plants by applying De-NOx catalyst coated on metallic monolith. The De-NOx catalyst was synthesized through the optimized coating technique, and the coated catalyst was uniformly and strongly adhered onto the surface of the metallic monolith according to the air jet erosion and bending test. Due to the good thermal conductivity of metallic monolith, the De-NOx catalyst coated on metallic monolith showed good De-NOx efficiency at low temperatures (200 ~ 250 ℃). In addition, the optimal amount of catalyst coating on the metallic monolith surface was confirmed for the design of an economical catalyst. Based on these results, the De-NOx catalyst of commercial grade size was tested in a semi-pilot De-NOx performance facility under a simulated gas similar to the exhaust gas emitted from a steel plant. Even at a low temperature (200 ℃), it showed excellent performance satisfying the emission standard (less than 60 ppm). Therefore, the De-NOx catalyst coated metallic monolith has good physical and chemical properties and showed a good De-NOx efficiency even with the minimum amount of catalyst. Additionally, it was possible to compact and downsize the SCR reactor through the application of a high-density cell. Therefore, we suggest that the proposed De-NOx catalyst coated metallic monolith may be a good alternative De-NOx catalyst for industrial uses such as steel plants, thermal power plants, incineration plants ships, and construction machinery.