• Investigative Magnetic Resonance Imaging
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• 제13권1호
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• pp.31-39
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• 2009

목적 : 본 연구는 PRF(Proton Resonance Frequency)를 이용한 MR 온도감시 영상에서 시간 해상도를 keyhole방법 적용으로 향상시키고자하였다. 제시된 keyhole방법과 기존 온도영상 방법 사이의 비교를 위해 온도 값에 대한 RMS(Root Mean Square) 오차와 SNR(Signal to Noise Ratio)을 비교하였다. 대상 및 방법 : PRF 방법과 GRE(Gradient Recalled Echo)를 이용하여 MR 온도영상을 구현하였으며 장비로는 임상용 1.5T MRI 장치를 이용하였다. 인체모사 조직인 2% 한천 젤 팬텀과 돼지 근육조직으로 실험을 수행하였다. 2.45GHz대역의 마이크로파 발생장치로 MR호환 동축 슬롯 안테나를 구동하여 MRI장치 내에서 대상 조직과 팬텀을 5분간 가열하였다. 가열 직후 10분 동안에 순차적으로 MR 원 데이터를 획득하였다. 획득된 원 데이터는 PC로 전송되어 전체 위상을 부호화하여 얻은 원 데이터의 바깥영역과 K-space의 중앙 영역을 각각 128, 64, 32, 16으로 위상부호화된 데이터로 keyhole영상을 재구성하였다. 256개로 전체 부호화된 자체-참조 온도영상과 RMS 오차를 비교하였으며, zero-filling 영상과 SNR비교를 하였다. 결과 : keyhole 온도 영상에서 위상부호화 수가 128, 64, 32, 16으로 줄어들수록 RMS 오차로 산출한 온도의 차이가 0.538, 0.712, 0.786, 0.845$^{\circ}C$ 만큼 증가하였으나 SNR 값은 keyhole의 위상부호화 수가 줄어도 유지되었다. 결론 : 본 연구는 고정된 매트릭스 크기에 keyhole 방법 적용을 이용하여 온도 감시에서의 시간해상도 증가와 SNR 값을 유지하는 결과를 도출하여 성공적인 적용을 보여 주었다. 본 연구를 기반으로 한 다음 연구에서는 최적화된 변수를 이용한 keyhole 방법 적용으로 최소 온도 오차의 실시간 MR 온도 감시가 가능할 것이라 예상된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.