• ETRI Journal
• /
• v.28 no.4
• /
• pp.533-536
• /
• 2006

A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non-return to zero operation with 12 dB extinction ratio is obtained. A four-channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2006.05a
• /
• pp.473-474
• /
• 2006

Aligned carbon nanotubes(CNTs) array were synthesized using direct current plasma-enhanced chemical vapor deposition. The nickel microgrids catalyzed the growth of carbon nanotubes which take on the area of the nickel microgrids. Selective growth of areas of nanotubes was achieved by patterning the nickel film. CNTs were grown on the pretreated substrates at 30% $C_2H_2:NH_3$ flow ratios for 10min. Carbon nanotubes with diameters about 20 nanometers and lengths approximately 720 nanometers were obtained. Morphologies of carbon nanotubes were observed by FE-SEM and TEM.

• Journal of Environmental Science International
• /
• v.23 no.6
• /
• pp.1075-1083
• /
• 2014

The objective of this study was to evaluate the effect of cutting types on microclimate and growth characteristics of afforested tree in Quercus acutissima stand after different types of cutting. The difference in temperature reaching $5.2^{\circ}C$ was shown in between clear cutting and selective cutting treatments. On July and August days with temperatures more than $35^{\circ}C$ often appeared in clear cutting stand. The values of VPD in July and August were higher than those in other months. Maximum VPD of 3.99 kPa was shown in clear cutting stand on May 23 as a prolonged rainless days appeared. However, VPD in selective cutting stand always stayed under 3.0 kPa throughout growing season. A higher intensity was shown in clear cutting and strip clear cutting stands, reaching to more than $1,600{\mu}mol\;m^{-2}s^{-1}$ at midday on early August, while that in selective cutting stand stayed about 1,500. In relative growth rate selective cutting stand showed a significantly higher relative growth rate in plant height than those in other cutting stands (p<0.05). The number of leaf in current-year branches significantly increased in selective cutting stand, whereas no increase was shown in clear cutting and strip clear cutting stands (p<0.05). In addition, relative elongation rate of current year branch also showed higher values in selective cutting stand compared with that in strip clear cutting stand (p<0.05). However, leaf mass per unit area (LMA) was higher in order of strip clear cutting, clear cutting, and selective cutting stands. From these results it is concluded that environmental conditions in clear cutting and strip clear cutting stands during growing season are more stressful to afforested tree species, resulting in lower relative growth in plant height, elongation of current-year branches, and leaf number per branch compared with those in selective cutting stand. Consequently, more data must be accumulated in the field to find out best cutting type in plantation considering the adaptational characteristic of each tree species varies with species and life span of tree is long.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.614-614
• /
• 2013

The effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. A synthetic method to produce such large area graphene films with precise thickness from mono- to few-layer would be ideal for chemists and physicists to explore the promising electronic applications of these materials. Here, large-area uniform mono-, bi-, and few-layer graphene films were successfully synthesized on copper surface in selective growth windows, with a finely tuned total pressure and $CH_4$/$H_{2gas}$ ratio. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.

• Journal of Ceramic Processing Research
• /
• v.13 no.spc1
• /
• pp.93-95
• /
• 2012

We report on the growth and characterization of the nano- and micro scale GaN structures selectively grown on the vertex of GaN stripes using the metal organic vapor phase epitaxy method and conventional photolithography technique. The triangular shaped nano- and micro GaN structures which have semi-polar {11-22} facets were formed only on the vertex of the lower GaN stripes. Crystalline defects reduction was observed by transmission electron microscopy for upper GaN stripes. We also have grown the InGaN/GaN multi-quantum well structures on the semi-polar facets of the upper GaN stripes. Cathodoluminescence images were taken at 366, 412 and 555 nm related to GaN band edge, InGaN/GaN layer and defects, respectively.

• Applied Science and Convergence Technology
• /
• v.26 no.4
• /
• pp.79-85
• /
• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

• Journal of the Korean Vacuum Society
• /
• v.12 no.2
• /
• pp.118-122
• /
• 2003

Using low pressure metalorganic chemical vapor deposition (MOCVD), we have developed selectively area epitaxy (SAE). Using the developed SAE technology, we have grown AlGaAs/GaAs multi layers and InGaAs/GaAs quantum wire structures on the selectively $SiO_2$ masked GaAs substrates. We have obtained triangular shaped AlGaAs/GaAs and InGaAs/GaAs structures with sharp tips and smooth sidewalls. To rod the optimum conditions, several growth parameters such as growth rate, V/III ratio, growth temperature, and direction of the opening stripes were investigated. The emission peak from quantum wires was observed at 975 nm. With increasing of temperature the emission intensity from side wall quantum wells decreased abruptly. But the intensity from Quantum wires decreased slowly compared to that of side wall quantum wells and it became even stronger from above 50 K.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1993.05a
• /
• pp.72-73
• /
• 1993

• Journal of Ceramic Processing Research
• /
• v.13 no.spc1
• /
• pp.128-131
• /
• 2012

The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multi-sliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and p-type metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.3
• /
• pp.134-140
• /
• 2002

Deep submicron NMOSFETs with elevated source/drain can be fabricated using self-aligned selective epitaxial growth(SEG) of silicon for enhanced device characteristics with shallow junction compared to conventional MOSFETs. Shallow junctions, especially with the heartily-doped S/D residing in the elevated layer, give hotter immunity to Yt roll off, drain-induced-barrier-lowering (DIBL), subthreshold swing (SS), punch-through, and hot carrier effects. In this paper, the characteristics of both deep submicron elevated source/drain NMOSFETs and conventional NMOSFETs were investigated by using TSUPREM-4 and MEDICI simulators, and then the results were compared. It was observed from the simulation results that deep submicron elevated S/D NMOSFETs having shallower junction depth resulted in reduced short channel effects, such as DIBL, SS, and hot carrier effects than conventional NMOSFETs. The saturation current, Idsat, of the elevated S/D NMOSFETs was higher than conventional NMOSFETs with identical device dimensions due to smaller sheet resistance in source/drain regions. However, the gate-to-drain capacitance increased in the elevated S/D MOSFETs compared with the conventional NMOSFETs because of increasing overlap area. Therefore, it is concluded that elevated S/D MOSFETs may result in better device characteristics including current drivability than conventional NMOSFETs, but there exists trade-off between device characteristics and fate-to-drain capacitance.