• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.1010-1017
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• 2011

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.393-393
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• 2011

오늘 날 태양전지 산업에서 가장 많은 생산을 하고 있는 분야는 결정질 태양전지분야이다. 현재는 이러한 시대적 요구에 따라 많은 연구가 진행되고 있는데 특히 junction을 이루는 n layer의 doping profile을 선택적으로 형성하여 개방전압 및 단락전류를 향상시키는 연구가 활발히 진행되고 있다. 본 연구는 이러한 n type layer의 doping profile을 선택적으로 형성하는 selective emitter solar cell에 관한 연구로써 SILVACO simulation을 이용하여 low Rs 영역은 고정하고 high Rs 영역의 doping depth를 가변 함으로써 high Rs 영역을 달리 형성하는 방법으로 selective emitter solar cell의 high Rs영역의 최적화에 관한 전산모사를 실시하였다. 각각의 가변조건에 따라 quantum efficiency를 통한 광학적 분석과 I-V를 통한 전기적 분석을 하여 high Rs영역을 최적화 하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.575-579
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• 2010

The technologies of Ni/Cu plating contact is attributed to the reduced series resistance caused by a better contact conductivity of Ni with Si and the subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading was combined with the lower resistance of a metal silicide contact and an improved conductivity of the plated deposit. This improves the FF (fill factor) as the series resistance is reduced. This is very much requried in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A Selective emitter structure with highly dopeds regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing In this paper the formation of a selective emitter, and the nickel silicide seed layer at the front side metallization of silicon cells is considered. After generating the nickel seed layer the contacts were thickened by Cu LIP (light induced plating) and by the formation of a plated Ni/Cu two step metallization on front contacts. In fabricating a Ni/Cu plating metallization cell with a selective emitter structure it has been shown that the cell efficiency can be increased by at least 0.2%.

• Current Photovoltaic Research
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• v.4 no.2
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• pp.54-58
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• 2016

Laser-doped selective emitter process requires dopant source deposition, spin-on-glass, and is able to form selective emitter through SiNx layer by laser irradiation on desired locations. However, after laser doping process, the remaining dopant layer needs to be washed out. Laser-induced melting of pre-deposited impurity doping is a precise selective doping method minimizing addition of process steps. In this study, we introduce a novel scheme for fabricating highly efficient selective emitter solar cell by laser doping. During this process, laser induced damage induces front contact destabilization due to the hindrance of silver nucleation even though laser doping has a potential of commercialization with simple process concept. When the laser induced damage is effectively removed using solution etch back process, the disadvantage of laser doping was effectively removed. The devices fabricated using laser doping scheme power conversion efficiency was significantly improved about 1% abs. after removal the laser damages.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.130-134
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• 2014

We have fabricated the selective emitter solar cell using double textured nanowires structure. The $40{\times}40mm2$-sized silicon substrates were textured to form the pyramid-shaped surface and the nanowires were fabricated by metal assisted chemical etching process using Ag nanoparticles, subsequently. The heavily doped and shallow emitters for selectiv eemitter solar cells were prepared through the thermal $POCl_3$ diffusion and chemical etch-back process, respectively. The front and rear electrodes were prepared following conventional screen printing method and the widths of fingers have been optimized. The selective emitter solar cell using double textured nanowires structure achieved a conversion efficiency of 17.9% with improved absorption and short circuit current density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.116-117
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• 2006

We investigated selective emitter effect of Porous Silicon (PSI) as antireflection coatings (ARC). The thin PSi layer, less than 100nm, was electrochemically formed by electrochemical method in about $3{\mu}m$ thick $n^+$ emitter on single crystalline silicon wafer (sc-Si). The appropriate PSi formations for selective emitter effect were carried out a two steps. A first set of samples allowed to be etched after metal-contact processing and a second one to evaporate Ag front-side metallization on PSi layer, by evaluating the I-V features The PSi has reflectance less than 20% in wavelength for 450-1000nm and porosity is about 60%. The cell made after front-contact has improved cell efficiency of about in comparison with the one made after PSi. The observed increase of efficiency for samples with PSi coating could be explained not only by the reduction of the reflection loss and surface recombination but also by the increased short-circuit current (Isc) within selective emitter. The assumption was confirmed by numerical modeling. The obtained results point out that it would be possible to prepare a solar cell over 15% efficiency by the proposed simple technology.

• Korean Journal of Metals and Materials
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• v.49 no.11
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• pp.905-909
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• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surfaces. One of the available front metal contacts is Ni/Cu plating, which can be mass produced via asimple and inexpensive process. A selective emitter, meanwhile, involves two different doping levels, with higher doping (${\leq}30{\Omega}/sq$) underneath the grid to achieve good ohmic contact and low doping between the grid in order to minimize the heavy doping effect in the emitter. This study describes the formation of a selective emitter and a nickel silicide seed layer for the front metallization of silicon cells. The contacts were thickened by a plated Ni/Cu two-step metallization process on front contacts. The experimental results showed that the Ni layer via SEM (Scanning Electron Microscopy) and EDX (Energy dispersive X-ray spectroscopy) analyses. Finally, a plated Ni/Cu contact solar cell displayed efficiency of 18.10% on a $2{\times}2cm^2$, Cz wafer.

• Laser Solutions
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• v.14 no.3
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• pp.1-6
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• 2011

Globally, the interest of renewable energy has become an upsurge. Especially, the solar industry is the one which is getting rapid growth rate. Many of researchers have been undertaking to improve the efficiency of solar cell to accomplish grid parity. The most of research has been concentrated on two methods, one on the selective emitter and the other is on LBSF (Local Back Surface Field) formation. Laser patterning will be needed to eliminate the thin film to form selective emitter and LBSF of solar cell. This paper reports some experimental results in laser patterning process for high-efficiency crystalline solar cell manufacturing. The experimental results indicate that the patterning quality depends on the average power and repetition rate of laser. The experimental results prove that the laser patterning process is an advantageous method to improve the efficiency of solar cell.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• Journal of the Semiconductor & Display Technology
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• v.10 no.1
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• pp.23-26
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• 2011

New organic light-emitting diodes with structure of ITO/DNTPD/TAPC/$Bebq_2/Bebq_2$:RP-411/ET-137/LiF/Al using the selective doping of 5% RP-411 in a single $Bebq_2$ host in the two wavelength(green, red) emitter formation were proposed and characterized. In the experiments, with a 300${\AA}$-thick undoped emitter of $Bebq_2$, three kinds of devices with different thicknesses of 30${\AA}$, 40${\AA}$ and 50${\AA}$ in the doped emitter of $Bebq_2$:RP-411 were fabricated. The electroluminescent spectra showed two peak emissions at the same wavelengths of 511 nm and 622 nm for the fabricated devices. When the device with a 30${\AA}$-thick doped emitter is referred as "D-1", the device with a 40${\AA}$-thick doped emitter is referred as "D-2" and the device with a 50${\AA}$-thick doped emitter is referred as "D-3", the relative intensity of 622 nm to 511 nm at two wavelength peaks was higher in the D-2 and the D-3 than in the D-1. The devices of D-1, D-2 and D-3 showed the color coordinates of (0.43, 0.46), (0.46, 0.44) and (0.48, 0.43) on the CIE chart, respectively.