• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.358-358
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• 2012

The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 추계학술발표회 초록집
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.202-202
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• 2000

AC-PDP(Plasma Display Paner)는 기체 방전을 이용한 디스플레이로서 기체에 직접 노출되는 MgO 보호막의 2차전자 방출계수(${\gamma}$는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류, 결정 방향성과 표면오염상태 등에 영향을 받는다. 본 연구에서는 유리 기판위에 Al 전극을 증착, 에칭후 screen printing으로 유전체를 도포, 소성 한 21inch 규격의 test panel에 MgO 보호막을 E-Beam으로 5000$\AA$ 증착한 후 MgO 보호막을 대기에 노출되는 시간간격을 변수로 하여 대기 열처리 한 MgO보호막의 2차 전자방출계수를 ${\gamma}$-FIB(Focused Ion Beam) 장치를 이용하여 측정하였다. 그리고 대기 노출 간격은 1분, 5분, 20분으로 하여 2차 전자방출계수를 측정하였고, 2차전자방출계수 측정 시 가속전압은 50V에서 200V까지 변화를 주었으며, Ne+을 사용하여 1.2$\times$10-4Torr의 진공도를 유지하며 측정하였다. 또한 각각의 MgO막의 에너지 갭을 광학적 방법을 이용하여 구하였다.

• 한국식품저장유통학회:학술대회논문집
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• 한국식품저장유통학회 2003년도 제23차 추계총회 및 국제학술심포지움
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• pp.135.1-135
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• 2003

To elucidate the effect of gamma-irradiation on the molecular properties of hemoglobin, the secondary, tertiary structure, and the molecular weight size of the protein were examined after irradiation at 0.5, 1, 5, and 10 kGy. Gamma-irradiation of hemoglobin solutions caused the disruption of the ordered structure of the protein molecules, as well as degradation, cross-linking, and aggregation of the polypeptide chains. A SDS-PAGE study indicated that irradiation caused initial fragmentation of the proteins and subsequent aggregation due to cross-linking of the protein molecules. The effect of irradiation on the protein was more significant at lower protein concentrations. Ascorbic acid decreased the degradation and aggregation of proteins by scavenging oxygen radicals that were produced by irradiation. A circular dichroism study showed that irradiation decreased the helical content of hemoglobin with a concurrent increase of the aperiodic structure content. Fluorescence spectroscopy indicated that irradiation decreased the emission intensity that was excited at 280 nm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제26회 학술발표회 초록집
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• pp.138-138
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• 2004

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제26회 학술발표회 초록집
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• pp.137-137
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• 2004

• 대한전자공학회논문지SD
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• 제44권12호
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• pp.12-17
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• 2007

본 연구에서는 전자빔 증착의 증착률이 MgO 보호막의 특성과 제작된 PDP의 방전 특성에 주는 영향에 대하여 연구, 분석 하였다. MgO 박막을 여러 조건의 증착률로 증착하였고, 이 후 결정 구조, 표면 거칠기, 박막 구조와 같은 특성을 XRD, AFM 등을 사용하여 측정, 평가하였다. 실험 결과와 Paschen law을 통해서 $5\AA/sec$의 증착률에서 이차전자방출이 최대가 되는 것을 확인할 수 있었으며, 동일 조건에서 방전 전압이 가장 작고, 발광 효율은 가장 큰 값을 갖는 것이 확인되었다. 또한 $5\AA/sec$의 (200) 결정 방향과 $F^+$ center 측정값도 가장 높게 측정되었다. XRD와 CL 스펙트럼의 결과를 통하여 이차전자방출계수가 MgO 박막의 분자 결정상의 $F/F^+$ centers구조와 관련 있음을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제13회 학술발표회 논문개요집
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• pp.169-172
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• 1997

MgO dielectric pprotection layer is ppreppared by R.F. reactive magnetron spputtering with Mg target under various conditions of spputtering ppressure, time and substrate tempperature. Discharge characteristics of ppDpp is also studied as a pparameter of MgO pprepparation conditions. As the working ppressure and substrate tempperature was increase, the discharge voltage was decreased. Two kinds of MgO ppreppared both spputtering and E-beam methods were stable after annealing at 35$0^{\circ}C$ for 120min. discharge voltage under 3 mixed gas(He+Xe0.2%+Ne30%) was V=130V, V=102V and ${\gamma}$ coefficient was twiced as much as that of dielectric layer.

• BMB Reports
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• 제35권6호
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• pp.590-594
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• 2002

To elucidate the effect of gamma-irradiation on the molecular properties of myoglobin, the secondary and tertiary structures, as well as the molecular weight size of the protein, were examined after irradiation at various irradiation doses. Gamma-irradiation of myoglobin solutions caused the disruption of the ordered structure of the protein molecules, as well as degradation, cross-linking, and aggregation of the polypeptide chains. A SDS-PAGE study indicated that irradiation caused initial fragmentation of the proteins and subsequent aggregation, due to cross-linking of the protein molecules. The effect of irradiation on the protein was more significant at lower protein concentrations. Ascorbic acid protected against the degradation and aggregation of proteins by scavenging oxygen radicals that are produced by irradiation. A circular dichroism study showed that an increase of the irradiation decreased the a-helical content of myoglobin with a concurrent increase of the aperiodic structure content. Fluorescence spectroscopy indicated that irradiation increased the emission intensity that was excited at 280 nm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.236-236
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• 1999

AC-PDP(Plasma display Panel)는 기체 방전을 이용한 디스플레이로서 기체에 직접 노출되는 MgO 보호막의 이차전자 방출계수(${\gamma}$)는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류, 결정 방향성과 표면오염상태등에 영향을 받는다. 본 연구에서는 MgO 보호막을 열처리한 상태와 열처리 하지 않은 상태를 ${\gamma}$-FIB 장치를 이용하여 2차전자방출 계수를 측정하여 비교하였다. 또한 24시간 MgO 보호막을 대기중에 방치하여 두었을 때 MgO 보호막의 표면오염상태에 대한 2차전자방출계수값을 측정하여 MgO 보호막의 표면오염에 대한 방전 전압특성저하가 어느정도인지를 알아보았다. 실험에 사용한 혼합기체는 Ne+Xe, He+Ne+Xe 혼합기체를 사용하였고, MgO 보호막은 21inch 규격의 실제 PDP Panel의 MgO 보호막을 사용하였다.