• 한국정보통신설비학회:학술대회논문집
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• 2009.08a
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• pp.293-297
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• 2009

In this thesis, design of a VCO(Voltage controlled Oscillator) with a novel tuning mechanism is presented for the Radar system. This circuit, the 9.5 GHz oscillator is designed and implemented by restructuring microstrip resonator to raise Q value and to require a wide frequency tuning range. This product is fabricated on 2.6 Teflon substrate and device is NE722S01. In this paper, The new microstrip resonator VCO is proposed to achieve the characteristic of a wide frequency tuning range. This microstrip resonator VCO shows the phase noise characteristic of -108.3 dBc/Hz at 1 MHz offset from the fundamental frequency, the output power of 5.7 dBm and the second harmonic suppression of -38 dBc for the VCO are obtained. The manufacture VCO shows a frequency tuning range of 193.8 MHz. The proposed micro trip resonator VCO can be used for X-band Radar System with required tuning range.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.3
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• pp.299-306
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• 2016

In this paper, a vital sign sensor based on impedance variation of resonator is proposed to detect the respiration and heartbeat signals within near-field range as a function of the separation distance between resonator and subject. The sensor consists of an oscillator with a built-in planar type patch resonator, a diplexer for only pass the second harmonic frequency, amplifier, SAW filter, and RF detector. The cardiac activity of a subject such as respiration and heartbeat causes the variation of the oscillation frequency corresponding impedance variation of the resonator within near-field range. The combination of the second harmonic oscillation frequency deviation and the superior skirt frequency of the SAW filter enables the proposed sensor to extend twice detection range. The experimental results reveal that the proposed sensor placed 40 mm away from a subject can reliably detect respiration and heartbeat signals.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.2A
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• pp.122-128
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• 2005

In this paper, a low noise parallel feedback oscillator for harmonic suppression and a frequency doubler are designed and implemented. As the fundamental signal of the oscillator for frequency doubling is extracted between the dielectric resonator (DR) filter and the gate device of the active device, the undesired harmonics at the output of the oscillator is remarkably suppressed. The fundamental signal of the oscillator for frequency doubling directly feeds to the frequency doubler without an additional band pass filter for harmonic suppression. The second harmonic suppression of -47.7 dBc at the oscillator output is achieved, while the fundamental suppression of -37.5 dBc at the doubler output is obtained. The phase noise characteristics are -80.3 dBc/Hz and -93.5 dBc/Hz at the offset frequency of 10 KHz and 100 KHz from the carrier, respectively.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.77-80
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• 2003

We design the local oscillator system of the 100 GHz band radio receiving system for a cosmic radio observation. We use the YIG oscillator with digital driver which is the main oscillator. This oscillator has a good frequency and phase stability at some temperature variation, and the easy computer aided control characteristics. This total system designed to two subsystem, first is the oscillator system include YIG oscillator, tripler, harmonic mixer and triplexer etc., second is the PLL system to supply the precise and stable local oscillator frequency to mixer. The proposed local oscillator system in this paper can be use a single or multi pixel receiver because this system can be lock the local oscillator frequency automatically using PC.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.4
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• pp.379-385
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• 2002

In this paper, frequency trifler fur 8 GHz local oscillator was designed and fabricated using MESFET. The third order harmonic was generated by biasing the transistor on A class. The fundamental frequency and the second harmonic were suppressed by using λ$\_$g//2 stub and band pass filter. As results, conversion gain of 2.67 ㏈ at 8.31 GHz, the harmonic suppression of -41.17 ㏈c, the bandwidth of 510 ㎒ were measured.red.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.787-792
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• 2004

This paper shows the design, fabrication and performance of oscillator appled to 5.5GHz RF module for local wireless communication system. Super low noise HJ FET of NE3210S01 is used to obtain a good phase noise Performance. The design Parameters for the optimum operating performance are simulated with ADS simulation. The measured out Power is 10 dBm at 5.5GHz, the second harmonic suppression -31 dBc, and the phase noise characteristics -98.83 dBc at 100kHz offset frequency, respectively. This implemented oscillator is available to local wireless Communication system.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.96-100
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• 2004

This paper shows the design, fabrication and performance of oscillator appled to 5.5GHz RF module for local wireless communication system. Super low noise HJ FET of NE3210S01 is used to obtain a good phase noise Performance. The design Parameters for the optimum operating performance are simulated with ADS simulation. The measured out Power is 10 ㏈m at 5.5GHz, the second harmonic suppression -31 ㏈c, and the phase noise characteristics -98.83 ㏈c at 100KHz offset frequency, respectively. This implemented oscillator is available to local wireless Communication system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.2
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• pp.152-158
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• 2004

A low phase noise frequency synthesizer at X-Band which employs the subharmonic injection locking was designed and tested. The designed frequency synthesizer consists of a 1.75 GHz master oscillator - which also operates as a harmonic generator - and a 10.5 GHz slave oscillator. A 1.75 GHz master oscillator based on PLL technique used two transistors - one constitutes the active part of VCO and the other operates as a buffer amplifier as well as harmonic generator. The first stage operates a fixed locked oscillator and using the BJT transistor whose cutoff frequency is 45 GHz, the second stage is designed, operating as a harmonic generator. The 6th harmonic which is produced from the harmonic generator is injected into the following slave oscillator which also behaves as an amplifier having about 45 dB gain. The realized frequency synthesizer has a 7.4 V/49 mA, -0.5 V/4 mA of the low DC power consumption, 4.53 dBm of output power, and a phase noise of -95.09 dBc/Hz and -108.90 dBc/Hz at the 10 kHz and 100 kHz offset frequency, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.5
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• pp.437-443
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• 2004

Aperture has been employed on the ground plane in the hairpin resonator. Aperture has been fabricated by etching the part of the ground effected coupling coefficient and then quality factor of hairpin resonator has been increased. When the hairpin oscillator using aperture has been compared with the conventional hairpin oscillator using microstrip, it has been improved the phase noise about 19 ㏈c @100 ㎑. As a result of PBG connecting to the output of the employing aperture hairpin oscillator, the second and third harmonics are suppressed. In this paper, oscillator has been designed and fabricated in operating 5.8 ㎓ band. The output power has been obtained 0,67 ㏈m and the second harmonic has been suppressed about -53,67 ㏈c.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.613-624
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• 2002

Electrical characteristics of two types of 20 GHz Push-Push GaAs MESFET dielectric resonator oscillators having Wilkinson and T-junction power combiners for the output stage have been investigated and compared. So we have explained that the output power and phase noise properties of the Push-push FET DRO are depending on return loss and isolation characteristics of power combiner at the fundamental and the second harmonic frequencies. A Push-push oscillator for suppressing the fundamental frequency of 10 GHz and enhancing the second harmonic of 20 GHz has been designed and fabricated in microstrip configuration on 20 mil thick RT-Duroid($\varepsilon$$_{r}$ = 2.52) Teflon substrate. Return loss and isolation characteristics of T-junction and Wilkinson have been measured at the fundamental frequency of 10.2 GHz and the second harmonic frequency of 20.5 GHz. At the fundamental frequency, -12 dB return loss and -3.7 dB isolation have been measured for the T-junction power combiner, and -14 dB return loss and -11 dB isolation fur the Wilkinson power combiner. At the second harmonic frequency, -10 dB return loss and -7.5 dB isolation have been obtained for the T-junction power combiner, and -23 dB return loss and -22 dB isolation for the Wilkinson power combiner. As a result, we have confirmed that the oscillator based on the Wilkinson power combiner with better retrun loss and isolation characteristics produces more output power and better phase noise characteristics..