• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.370-370
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• 2011

I-III-IV2족의 Cu(In,Ga)Se2 (CIGS) 박막 태양전지는 3단계(three-stage) 동시증발공정을 통하여 약 19.9%의 최고의 효율을 보유하고 있다. 3단계 공정에 있어 IV2족 Se의 증발 속도 또는 증착압력은 우선 배향성 제어 및 표면 미세구조 영향 등에 큰 영향을 미치는 것으로 알려져 있다. 본 연구에서는 CIGS 박막 합성을 위한 3단계 공정에서 각 단계별 Se 분압의 변화를 주어, 각 공정 단계에서 Se 분압의 변화가 CIGS 박막의 미세구조 및 셀 효율에 미치는 영향을 분석하였다. 3단계 공정에서 Cu, In, Ga 분압은 고정시키고, Se 분압의 크기 순서대로 1, 2, 3으로 변화시켜 CIGS 박막을 제조하였다. 이 박막의 미세구조, 특히, 우선 배향성, 표면의 기공, 결정성을 제어 하기 위하여 3단계 공정에서 1st stage 이후 Se 분압을 증가시키는 방법($3{\rightarrow}1$, $2{\rightarrow}1$)과 1st stage 이 후 Se 분압을 감소시키는 방법($1{\rightarrow}3$, $1{\rightarrow}2$)을 적용하여 비교하였다. 그 결과 3단계에서 1st stage 이후 Se 분압을 증가시킴으로써 (220)/(204)의 우선 배향성을 촉진시키며, 결정성을 개선하였고, 1st stage 이후 Se 분압을 감소시킴으로써 CIGS 박막 표면의 기공을 제거하고, 결정성을 향상시켰다. 이렇게 1st stage이 후 Se 분압을 증가시킴으로써 (220)/(204)의 우선 배향성의 촉진과 결정성 개선은 단락 전류(Jsc)를 증가시켰으며, 1st stage 이후 Se 분압을 감소시킴으로써 CIGS 박막 표면의 기공을 제거와 결정성 개선은 개방전압(Voc)의 증가효과를 가져왔다.

• 한국재료학회지
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• 제20권8호
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• pp.434-438
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• 2010

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

• 대한수의학회지
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• 제40권2호
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• pp.403-414
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• 2000

To improve the semen production, the selenium(Se) and vitamin E(Vit. E) were administrated into Hanwoo young sire for intensification an antioxidant system and the taurine were supplemented into semen extender for improving the semen characteristics. The 16 heads ranging from twenty to thirty two months of age were randomly assigned to control group, Se-admistrated group(Se-group), Vit. E-administrated group(Vit. E-Group) and Se and Vit. E administrated group(Se and Vit. E-group). Se and Vit. E dministrated 3 times every 30 days by intramuscular injection. The administration of Se, Vit. E, and Se and Vit. E didn't affect on semen volume, sperm concentration, and total sperm number among all groups(p>0.05). Adiministration of Se improved sperm motility and viability. Motility of Se-group and control were 26.01% and 19.20%, respectively(p<0.05). Viability of Se-group(47.07%) was higher than control group(35.73%), Vit. E group(36.55%)(p<0.05). The administration of Se and Vit. E didn't affect sperm capacitation and acrosome reaction. The 100mM taurine supplement into semen extender increased the motility of frozen/thawed semen in the Vit. E-group(p<0.05) and had a beneficial effects on decreasing abnormality of frozen/thawed semen in all groups(p<0.05). These results indicate that Se administration improve sperm motility and viability, and the taurine supplement into semen extender decrease abnormality in Hanwoo young sire.

• 한국결정성장학회지
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• 제3권2호
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• pp.140-148
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• 1993

As-Se-Ge 3원계 칼코게나이드 유리의 비정질화와 결정화 및 박막화를 통하여 전기적, 광학적 특성을 평가코자 하였다. 조성의 범위는$As_{20~50}, Se_{40~70}, Ge_{10~40}$ at%였으며, Se을 40 at%로 고정시 As가 30 at%이상일 때 급격한 전기전도도의 증가를 가져왔으며,$As_{20}Se_{50}Ge_{30}$을 결정화시킨 경우, $476^{\circ}C$에서 3시간 결정을 성장시켰을 때의 전기전도도가 가장 양호하였으며, 주결정상으로 $GeSe_2와 As_2Se_3$의 흔정을 관찰할 수 있었다. 박막에서는1.8~2.4eV의 광에너지 영역에서 $2{times}10^3~7{times}10^4$의 광흡수계수를 나타냈고, 1.85eV의 광학적 에너지 갭을 나타냈다.

• 한국자기학회지
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• 제24권2호
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• pp.41-45
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• 2014

뫼스바우어 분광 법과 x선 회절 측정으로 $(Fe_{0.95}Ni_{0.05})_7Se_8$을 연구하였다. $(Fe_{0.95}Ni_{0.05})_7Se_8$의 결정구조는 NiAs 구조의 triclinic superstructure를 나타내었다. 반면에 $Fe_7Se_8$의 결정구조는 orthohexagonal structure를 나타내었다. 125 K 부근에서 $(Fe_{0.95}Ni_{0.05})_7Se_8$의 전기사중극자 분열 값의 갑작스러운 변화는 triclinic superstructure를 갖는 $Fe_7Se_8$에서 보고된 점진적인 스핀 회전 전이와는 대조적으로 갑작스럽게 스핀 회전이 발생함을 보여주었다. 실온에서 측정된 $(Fe_{0.95}Ni_{0.05})_7Se_8$의 이성질체 이동 값은 0.5~0.69 mm/s를 나타냈는데 이 값으로부터 $A_1$, $A_2$, B, C 4개의 모든 사이트가 $Fe^{2+}$ 상태임을 알 수 있었다.

• Annals of Clinical Neurophysiology
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• 제5권2호
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• pp.171-176
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• 2003

Backgrounds and Objectives: Despite of enormous clinical and laboratory researches focused on the useful markers in status epilepticus(SE), clinically applicable methods are not yet available. Although ketogenic diet (KD) is an old method of treating epilepsies, its outstanding antiepileptic effect in some epileptic patients needs re-evaluation of this methods. This study was performed to evaluate the effect of KD on the change of nitric oxide(NO) during the SE. Methods: After the determination of critical EEG stages in the pilocarpine-induced SE model, serum NO levels were measured with Griess reaction. Open cardiac puncture was done immediately after the four different EEG stages of SE in the KD rats and regular diet (RD) rats. Cessation of SE was done with the 10~20 mg/Kg of diazepam i.p. injection in each stages of SE in KD and RD rats. Results: Pilocarpine-induced SE showed reliable EEG and behavioral patterns in all rats. Also, KD did not affect the SE induced by pilocarpine in terms of the SE induction time and SE severity. Serum NO was consistently higher in KD rats than RD rats in all SE stages. Conclusions: KD significantly increases NO during the pilocarpine-induced SE. These finding might contribute the neuroprotective effect of KD in the SE.

• 한국산학기술학회논문지
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• 제16권6호
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• pp.4137-4146
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• 2015

시스템의 규모와 요구기능은 점점 대형화되고 복잡해지고 있다. 이러한 시스템 개발 프로젝트의 성공적인 수행을 위해서는 프로세스에 따른 체계적인 시스템공학(SE)과 프로젝트관리(PM) 활동이 요구되고 있다. 시스템 개발 조직에서는 SE&PM 프로세스 개선 및 능력평가 모델인 CMMI를 채택하여 SE&PM 능력 확보에 노력하고 있으며, 이를 위해 조직의 비즈니스 특성에 맞는 조직 표준 프로세스를 구축하여 적용하고 있다. 하지만 시스템 개발조직 현장에서는 CMMI 프로세스영역 간 상호연관성에 대한 충분한 이해부족으로 조직 프로세스 구축에 어려움이 따르고 있다. 또한 SE와 PM활동은 시스템 개발에 있어서 상호 밀접하게 연관되어 있기 때문에 SE와 PM 프로세스는 상호 통합 및 연계성이 확보되어야만 효과적이고 효율적인 프로젝트 수행이 될 것이다. 본 논문에서는 시스템 개발 조직에서 CMMI 기반 조직 프로세스 구축에 참조되고 활용될 수 있는 조직의 SE&PM 통합 프로세스 아키텍처를 제시한다.

• Journal of Microbiology and Biotechnology
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• 제31권4호
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• pp.529-539
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• 2021

The beet armyworm, Spodoptera exigua, is a serious insect pest infesting various vegetable crops. Two infectious insect viruses, baculovirus and iflavirus, are known to induce epizootics in S. exigua populations. Indeed, some laboratory colonies have appeared to be covertly infected by these viruses. Diagnostic PCR tests detected two different viruses: Spodoptera exigua multiple nucleopolyhedrosis virus (SeMNPV) and iflaviruses (SeIfV1 and SeIfV2). Viral extract from dead larvae of S. exigua could infect Sf9 cells and produce occlusion bodies (OBs). Feeding OBs to asymptomatic larvae of S. exigua caused significant viral disease. Interestingly, both SeIfV1 and SeIfV2 increased their titers at late larval stages. Sterilization of laid eggs with 1% sodium hypochloride significantly reduced SeMNPV titers and increased larval survival rate. Double-stranded RNA (dsRNA) specific to SeIfV1 or SeIfV2 significantly reduced viral titers and increased larval survival rate. To continuously feed dsRNA, a recombinant Escherichia coli HT115 expressing SeIfV1-dsRNA was constructed with an L4440 expression vector. Adding this recombinant E. coli to the artificial diet significantly reduced the SeIfV1 titer and increased larval survival. These results indicate that laboratory colony collapse of S. exigua is induced by multiple viral infections. In addition, either suppression of SeMNPV or SeIfV infection significantly increased larval survival, suggesting a cooperative pathogenicity between baculovirus and iflavirus against S. exigua.

• Current Photovoltaic Research
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• 제7권1호
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• pp.1-8
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• 2019

The $Cu(In,Ga)Se_2$ (CIGS) thin film obtained by two-step process (metal deposition and Se annealing) has a rough surface morphology and many voids at the CIGS/Mo interface. To solve the problem a precursor that contains Se was employer by depositing a (In,Se)/(Cu,Ga) stacked layer. We devised a two-step annealing (vacuum pre-annealing and Se annealing) for the precursor because direct annealing of the precursor in Se environment resulted in the small grains with unwanted demarcation between stacked layers. After vacuum pre-annealing up to $500^{\circ}C$ the CIGS film consisted of CIGS phase and secondary phases including $In_4Se_3$, InSe, and $Cu_9(In,Ga)_4$. The secondary phases were completely converted to CIGS phase by a subsequent Se annealing. A void-free CIGS/Mo interface was obtained by the two-step annealing process. Especially, the CIGS film prepared by vacuum annealing $450^{\circ}C$ and subsequent Se annealing $550^{\circ}C$ showed a densely-packed grains with smooth surface, well-aligned bamboo grains on the top of the film, little voids in the film, and also little voids at the CIGS/Mo interface. The smooth surface enhanced the cell performance due to the increase of shunt resistance.

• 한국환경농학회지
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• 제38권1호
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• pp.47-53
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• 2019

BACKGROUND: This experiment was conducted to examine the effects of organic Se concentration and the number of foliar applications on growth characteristics and Se content in rice. METHODS AND RESULTS: A series of multiple foliar applications were performed at (1) 3 times (maximum tillering stage + booting stage + heading stage), (2) 4 times I (effective tillering stage + maximum tillering stage + booting stage + heading stage), (3) 4 times II (maximum tillering stage + booting stage + heading stage + grain filling stage) according to the development stage. Each set of the foliar application plots was treated with 0, 10, 20, 40, 60, 100 ppm of Se and with mixed pesticide ($P^*$ + Se 40 ppm) in which the treatment time was the same as that of the treatment 4 times II. The total cultivation period of rice was 184 days. Se contents in rice (brown rice, white rice) were analyzed by ICP. CONCLUSION: The number of grains per head tended to decrease with increasing concentrations of organic Se in all treatments. However, number of panicles per hill did not show statically significant differences between the 3 times and 4 times I treatments. The grain yield decreased with the 3 times and 4 times II, but there was no significant difference in 4 times I. Se content in brown rice was the highest at 100 ppm Se (5268.64) treatment and lowest at 10 ppm Se ($1269.19{\mu}g{\cdot}kg^{-1}$) treatment. Se content in the polished rice was the highest at 100 ppm Se (5047.33) treatment and lowest at 10 ppm Se ($885.05{\mu}g{\cdot}kg^{-1}$) treatment. The higher selenium was treated, the higher Se content was found in the rice (brown rice, polished rice).