• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.162-162
• /
• 2011

Nanometer-sized noble metals can trap and guide sunlight for enhanced absorption of light based on surface plasmon that is beneficial for generation of hot electron flows. A pulse of high kinetic energy electrons (1-3 eV), or hot electrons, in metals can be generated after surface exposure to external energy, such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not at thermal equilibrium with the metal atoms. It is highly probable that the correlation between hot electron generation and surface plasmon can offer a new guide for energy conversion systems [1-3]. We show that hot electron flow is generated on the modified gold thin film (<10 nm) of metal-semiconductor (TiO2) Schottky diodes by photon absorption, which is amplified by localized surface plasmon resonance. The short-circuit photocurrent obtained with low energy photons (lower than bandgap of TiO2, ~3.1-3.2 eV) is consistent with Fowler's law, confirming the presence of hot electron flows. The morphology of the metal thin film was modified to a connected gold island structure after heating to 120, 160, 200, and 240$^{\circ}C$. These connected island structures exhibit both a significant increase in hot electron flow and a localized surface plasmon with the peak energy at 550-570 nm, which was separately characterized with UV-Vis [4]. The result indicates a strong correlation between the hot electron flow and localized surface plasmon resonance with possible application in hot electron based solar cells and photodetectors.

• Journal of IKEEE
• /
• v.24 no.1
• /
• pp.368-371
• /
• 2020

In this paper, we propose a linear tapered slot rectifying antenna for a portable UHF-band RFID system. Since the proposed rectifying antenna does not use a dielectric substrate, the planar antenna is implemented with a thin metal thickness. The rectifier circuit converts input RF power into output DC voltage using a voltage doubler circuit based on two anti-parallel schottky diodes. The rectifying antenna is integrated by the voltage doubler circuit into a linear tapered slot antenna. For conjugate impedance matching of the rectifying circuit and the linear tapered slot antenna, the source-pull method was utilized by adjusting the angle of the tapered slot and the length of the antenna feed line. The proposed antenna prototype has been verified with the electrical and radiation characteristics through RF-DC conversion and far-field radiation test in open space measurement environment. Finally, the proposed antenna is realized to 0.23-wavelength (75 mm) and 0.18-wavelength (60 mm) at 915 MHz center frequency.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2015.10a
• /
• pp.412-415
• /
• 2015

This paper presents a MPPT(Maximum Power Point Tracking) control CMOS interface circuit for vibration energy harvesting. The proposed circuit consists of an AC-DC converter, MPPT Controller, DC-DC boost converter and PMU(Power Management Unit). The AC-DC converter rectifies the AC signals from vibration devices(PZT). MPPT controller is employed to harvest the maximum power from the PZT and increase efficiency of overall system. The DC-DC boost converter generates a boosted and regulated output at a predefined level and provides energy to load using PMU. A full-wave rectifier using active diodes is used as the AC-DC converter for high efficiency, and a schottky diode type DC-DC boost converter is used for a simple control circuitry. The proposed circuit has been designed in a 0.35um CMOS process. The chip area is $950um{\times}920um$.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.3 no.1
• /
• pp.229-234
• /
• 1999

We analyzed the reliability characteristics in platinum schottky diodes with variations of n-type silicon substrates concentrations and temperature variations of measurements. The parameters of reliability measurement analysis are saturation current. turn-on voltage and ideality factor in the forward bias, the breakdown voltage in the reverse bias with device shapes. The shape of devices are square type and long rectangular type for edge effect. As a result, we analyzed that the forward turn-on voltage, barrier height, dynamic resistance and reverse breakdown voltage were decreased but ideality factor and saturation current were increased by increased concentration in platinum and n-silicon junction parts. In measurement temperature(RT, $50^{\circ}C$, $75^{\circ}C$), the extracted electrical parameter values of reliability characteristics were increased at the higher temperature under the forward and reverse bias. The long rectangular type devices were more decreased than the square type in reverse breakdown voltage by tunneling effects of edge part.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.33-33
• /
• 2000

일반적으로 GaN-based light emitting diodes(LEDs)는 Top layer위에 금속박막으로 contact을 형성하고 있으며 광소자 구성에 있어 빛은 이러한 금속 contact을 통과할 수 없다. 그러나 만약 이러한 contact이 투명전도막으로 구성될 수 있다면 보다 효율적인 광소자의 구성이 기대되어진다. 특히 GaN photodetector, GaN-based LEDs, GaN vertical cavity surface emitting lasers(VCSELs)등의 소자형성에 있어 투명전도막 contact은 매우 중요하며 그 응용에 앞서 기본적인 구조적, 전기적, 광학적 특성에 대한 연구가 반드시 선행되어져야 한다. 따라서 본 실험에서는 이러한 투명전도막으로써 Indium Tin Oxide(ITO)를 사용하였으며 박막형태의 contact으로 제조하여 n-GaN, p-GaN와 corning glass위에 e-beam evaporation법로써 제조하였다. 또한 각 n-, p-type과 corning glass위에 증착된 ITO박막의 구조적 특성을 분석하기 위하여 x-ray diffractometry(XRD)와 Auger electron spectroscopy(AES)등을 사용하였으며 전기적 특성을 측정하기 위하여 four point probe를 사용하였고 그들의 I-V 곡선을 측정하였다. 또한 UV spectrometry를 사용하여 그들의 광학적 특성을 측정하고자 하였다. ITO 박막의 제조에 있어 기판은 초음파 유기세정 후 HCl과 H2O2(1:1)의 혼합용액을 사용하여 GaO2를 제거하고자 하였으며 이후 초순수로 세척하여 사용하였다. 초기 진공도는 3$\times$10-5 Torr이하였으며 기판온도 50$0^{\circ}C$에서 0.6 /s의 증착속도로 약 2000 증착하였다. 이렇게 제조된 ITO 박막은 5$\times$10-5 Torr이하의 진공분위기에서 $600^{\circ}C$로 열처리를 실시하였으며 열처리 시간의 변화에 따른 그들의 전기적, 구조적, 광학적 특성을 측정하였다. 열처리 과정을 통한 ITO박막은 투과도는 420nm의 영역에서 80%이상을 나타내었으며 이때의 면저항은 약 50ohm/ 이었다. 또한 I-V 곡선 측정에 의한 contact특성의 측정결과 열처리 전의 ITO contact은 n-GaN와 n-GaN에 대해 각각 ohmic과 schottky contact의 일반적인 contact 특성을 나타내었다. 그러나 이러한 contact 특성은 열처리 시간의 변화에 따라 변화하는 것을 확인할 수 있었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2014.10a
• /
• pp.267-270
• /
• 2014

This paper presents a CMOS interface circuit for vibration energy harvesting. The proposed circuit consists of an AC-DC converter and a DC-DC boost converter. The AC-DC converter rectifies the AC signals from vibration devices(PZT), and the DC-DC boost converter generates a boosted and regulated output at a predefined level. A full-wave rectifier using active diodes is used as the AC-DC converter for high efficiency, and a schottky diode type DC-DC boost converter is used for a simple control circuitry. A MPPT(Maximum Power Point Tracking) control is also employed to harvest the maximum power from the PZT. The proposed circuit has been designed in a 0.35um CMOS process. The chip area is $530um{\times}325um$. Simulation results shows that the maximum efficiencies of the AC-DC converter and DC-DC boost converter are 97.7% and 89.2%, respectively. The maximum efficiency of the entire system is 87.2%.

• Journal of IKEEE
• /
• v.27 no.4
• /
• pp.556-560
• /
• 2023

In this study, the impact of Nitrogen implantation process on deep-level defects and lifetime in 4H-SiC Epi surfaces was comparatively analyzed. Deep Level Transient Spectroscopy (DLTS) and Time Resolved Photoluminescence (TR-PL) were employed to measure deep-level defects and carrier lifetime. As-grown Schottky Barrier Diodes (SBDs) exhibited energy levels at 0.16 eV, 0.67 eV, and 1.54 eV, while for implantation SBD, defects at 0.15 eV were observed. This indicates a reduction in defects associated with energy levels Z_1/2 and EH_6/7, known as lifetime killers, as impurities from nitrogen implantation replace titanium and carbon vacancies.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.10
• /
• pp.45-52
• /
• 2008

We investigated the design of an RF-powered, wireless temperature sensor tag chip using $0.18-{\mu}m$ CMOS technology. The transponder generates its own power supply from small incident RF signal using Schottky diodes in voltage multiplier. Ambient temperature is measured using a new low-power temperature-to-voltage converter, and an 8-bit single-slope ADC converts the measured voltage to digital data. ASK demodulator and digital control are combined to identify unique transponder (ID) sent by base station for multi-transponder applications. The measurement of the temperature sensor tag chip showed a resolution of $0.64^{\circ}C/LSB$ in the range from $20^{\circ}C$ to $100^{\circ}C$, which is suitable for environmental temperature monitoring. The chip size is $1.1{\times}0.34mm^2$, and operates at clock frequency of 100 kHz while consuming $64{\mu}W$ power. The temperature sensor required a -11 dBm RF input power, supported a conversion rate of 12.5 k-samples/sec, and a maximum error of $0.5^{\circ}C$.

• Journal of IKEEE
• /
• v.20 no.1
• /
• pp.45-53
• /
• 2016

This paper presents a CMOS interface circuit for vibration energy harvesting with MPPT (Maximum Power Point Tracking). In the proposed system a PMU (Power Management Unit) is employed at the output of a DC-DC boost converter to provide a regulated output with low-cost and simple architecture. In addition an MPPT controller using FOC (Fractional Open Circuit) technique is designed to harvest maximum power from vibration devices and increase efficiency of overall system. The AC signal from vibration devices is converted into a DC signal by an AC-DC converter, and then boosted through the DC-DC boost converter. The boosted signal is converted into a duty-cycled and regulated signal and delivered to loads by the PMU. A full-wave rectifier using active diodes is used as the AC-DC converter for high efficiency, and a DC-DC boost converter architecture using a schottky diode is employed for a simple control circuitry. The proposed circuit has been designed in a 0.35um CMOS process, and the designed chip occupies $915{\mu}m{\times}895{\mu}m$. Simulation results shows that the maximum power efficiency of the entire system is 83.4%.