• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.253-253
• /
• 2009

Electrospinning is one of the simple, cost- efficient methods to produce long continuous semiconducting oxide nanofibers. Polyvinyl Alcohol (PVA) and zinc acetate were used. PVA/Zinc acetate aqueous solutions were electrospun into nonwoven webs. CCD camera, with a lens of long working distance and digital video board were used in capturing the drop and web deposition. The diameter and morphology of nanofibers were analyzed with a Field-emission scanning electron microscopy (FE-SEM). In this study, the average diameter and morphology of nanofibers have been explorered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.442-443
• /
• 2009

We prepared and characterized particle based CIGS thin film using a thermal evaporator. CIGS powder were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$, Se powder in solvent. The CIGS thin film deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Vis-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.429-429
• /
• 2009

Nanoporous anodic alumina membranes (NAAM) with high-density through-hole pores fabricated by hard anodization of aluminum in 0.3 M oxalic acid under the applied voltage of 40 (mild anodization), 80, 100, 120 and 140 V were investigated. The current-time responses monitored using a PC-controlled anodization cell and the corresponding pore structures attainable from field-enhanced scanning electron microscopy (FE-SEM) were analyzed in order to establish the optimum fabrication process. The nanoporous structure can be produced for all the voltage conditions, while the stabilized through-hole pore formation seems to occur at 40, 80 and 140 V. The growth rate under 140 V hard anodization was over 30 times higher than under 40 V mild anodization (1.5 um/hr).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.10
• /
• pp.835-844
• /
• 2001

In this paper, we report the successful growth of crystalline carbon nitride films in Si(100) by a laser-electric discharge method. The laser ablation of the target leads to vapor plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy(AES) were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films with a deposition time of 2 hours is studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.224-227
• /
• 2001

ZnO buffer layers were used to grow ZnO films on c-plane sapphire substrates. The role of ZnO buffer layers in the growth of ZnO thin films on sapphire substrates was investigated by scanning electron microscopy, X-ray diffraction, and Photolumminescence(PL) measurements. At the optimized ZnO buffer layer thickness of 100 $\AA$, FWHM of $\theta$ -rocking curve of ZnO thin films was minimized to 0.73 degrees and room temperature PL spectra showed that deep level emission was not hardly seen. The optimization of the ZnO buffer layer thickness resulted in improvements of the surface morphology and crystalline quality of ZnO thin films.

• Electrical & Electronic Materials
• /
• v.9 no.3
• /
• pp.240-245
• /
• 1996

Non-ozone layer destructive Chlorofluorocarbon(CFC) altematives(CHCIF$_{2}$ and $C_{2}$H$_{2}$F$_{4}$) have been initially used for laser-induced thenrmochemical etching of GaAs. High etching rate up to 188.mu.m/sec and an aspect ratio of 2.7 have been achieved by a single scan of laser beam, respectively. The etching rate at constant ambient gas pressure was found to saturate for beam power. The chemical compositions of the reaction products deposited on the etched groove were measured by Auger electron microscopy(AES). Etched profile, depth and width were observed by scanning electron microscope(SEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.886-889
• /
• 2002

This paper describes the characteristic analyses and a new design of the bushing for the pole transformers. The mechanical breakdown of the upper part of the bushing was frequently occurred. This caused the leakage of mineral oil, resulted in the interruption of electric power. Therefore, the bushings were investigated by the material analytical method and Finite Element Method. The analyses were performed by the Induced Coupled Plasma(ICP), X-ray diffraction(XRD), Scanning Electron Microscopy(SEM), and Dielectric Thermal Analyzer(DETA). Also, the Von-Mises stress of the top part of bushing was determined by using ANSYS program. The Von-Mises stress of the newly designed bushing was reduced about 50%. Therefore, if we apply the newly designed bushing, the number of mechanical breakdown may be decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.694-698
• /
• 2002

Ti films were deposited onto $100{\times}100$ mm alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T. ${\sim}400^{\circ}C$, annealing temperature of $100{\sim}400^{\circ}C$ and sputtering gas pressure of $1.3{\sim}3.0{\times}10^{-2}$ Torr. And the films were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties obtained by substrate temperature of ${\sim}200^{\circ}C$, target-substrate distance of ~14 cm and sputtering pressure of $1.3{\sim}1.7{\times}10^{-2}$ Torr. Also at that condition the most excellent adhesion was observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.290-291
• /
• 2006

We prepared the multilayer with Al doped ZnO (AZO)/Ag/AZO structure. The multilayer were deposited with various thickness of Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. To investigate the electrical, optical and structural properties, we used Hall Effect measurement system, four-point probes. UV-VIS spectrometer with a wavelength of 300 - 100nm, X-ray Diffractometer(XRD) and scanning electron microscopy (SEM). We obtained multilayer thin film with the low resistivity $5,9{\times}10^{-5}{\Omega}cm$ and the average transmittance of 86% m the visible range (400 - 800nm).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.3
• /
• pp.203-207
• /
• 1998

After etching Al-Cu alloy films using $SiCl_4/Cl_2/He/CHF_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS (X-ray photoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, the $SF_6$ plasma treatment subsequent to the etch has been carried out. A passivation layer is formed by fluorine-related compounds on etched Al-Cu alloy surface after $SF_6$ treatment, and the layer suppresses effectively the corrosion on the surface as the RF power of $SF_6$ treatment increases. The corrosion could be suppressed successfully with $SF_6$ treatment in the RF power of 150watts.