• 한국ITS학회 논문지
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• 제6권2호
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• pp.34-44
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• 2007

현재 국내의 각 지방자치 단체에서는 지능형 교통체계(ITS)사업이 활발히 시행되고 있다. 이중 많은 지역에서 효율적인 교통관리를 위하여 실시간 신호제어시스템을 구축하여 운영 중에 있으며, 지점검지기인 루프검지기를 설치하여 실시간으로 검지기정보를 수집하고 있다. 검지기에서 수집되어 신호제어에 이용되는 자료는 교통량, 점유시간/비점유시간, 포화도, 지점속도, 대기길이 등이 있다. 본 논문에서는 실시간 신호제어시스템 검지기 정보가 링크소통상태를 파악하는 정보로 활용될 수 있는지를 분석 평가하였다. 평가를 위하여 대상구간의 통행시간을 실측하여 검지기 수집정보와의 상관관계를 다양하게 평가하였다. 분석 결과 고려된 변수들 중 대기길이가 구간통행시간과 가장 높은 상관관계를 나타내었다. 그리고 지점속도 자료를 이용하여 구간통행 정보를 추정한 결과, 오차율이 비교적 크게 나타나 실시간 신호제어시스템검지정보를 직접적으로 구간통행정보 추정에 사용하는 것은 적절치 않다고 판단된다. 그러나 COSMOS 검지기는 포화도와 대기길이와 같은 링크의 교통상황에 대해 설명하는 정보를 실시간으로 수집하기 때문에 이를 구간검지기의 보완용으로 사용될 수 있다고 판단된다. 따라서 본 논문에서는 신호제어시스템에서 가공되는 포화도와 대기길이정보를 활용하여 정성적 소통정보인 혼잡도를 산출하는 방안을 제시하였다.

• 대한방사선기술학회지:방사선기술과학
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• 제10권1호
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• pp.75-83
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• 1987

The insulating oil used for X-ray tube housing were degraded by X-ray irrdiation, high temperature and high anode voltage for normal operation. This study was measured the conduction current-X-ray dose, heating degradation, time, temperature and electric field characteristics and the dependense of electrode materials and gap length in the X-ray irradiatied insulating oil under of D.C voltage. The obtained results can be summarized as following. 1. The conduction current of X-ray irradiated insulating oil is more about $2.5{\sim}3$ times as large as than that of non x-ray irradiated, and is become saturation phenomena after some degree. 2. The conduction current of many times heating x-ray irradiated insulating oil is more than that of a few times heating. 3. The higher temperature x-ray irradiated insulating oil is increased, the more conduction current, and that is increased about ten times as large as when it's temperatures is increased to $80^{\circ}C\;at\;30^{\circ}C$, twenty five times at $100^{\circ}C$. 4. The dependence of electrode materials is appeared at the low electric field, and the small gap length with Fe > Cu > Al. 5. The low electric field than 3000 v/cm is appeared Ohm's law region, and the high is become saturation region at the I-E characteristics. 6. The larger gap length is become, the more conduction current is increased at the same electric field.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2006년도 하계학술발표대회 논문집
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• pp.68-73
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• 2006

The present paper deals with an experimental study of boiling heat transfer characteristics of R-290, and is focused on pressure gradient and heat transfer coefficient of the refrigerant flow inside horizontal smooth minichannel with inner diameter of 3.0 mm and length of 2000 mm. The direct heating method applied for supplying heat to the refrigerant where the test tube was uniformly heated by electric current which was applied to the tube wall. The experiments were conducted with R-290 with purity of 99.99% at saturation temperature of 0 to $10^{\circ}C$. The range of mass flux is $50{\sim}250kg/m^2s$ and heat flux is $5{\sim}20kW/m^2$. The heat transfer coefficients of R-290 increases with increasing mass flux and saturation temperature, wherein the effect of mass flux is higher than that of the saturation temperature, whereas the heat flux has a low effect on increasing heat transfer coefficient. The significant effect of mass flux on heat transfer coefficient is shown at high quality, the effect of heat flux on heat transfer coefficient at low quality shows a domination of nucleate boiling contribution. The heat transfer coefficient of the experimental result was compared with six existing heat transfer coefficient correlation. Zang et al.'s correlation(2004) gave the best prediction of heat transfer coefficient.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.176-176
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• 2003

The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

• 대한교통학회지
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• 제1권1호
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• pp.56-63
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• 1983

Intersection control has dual-purposes; increasing capacity and reducing delay. The primary concern of efficient intersection control under oversaturated condition as in Korea is to increase capacity. Prevailing intersection operation technique permits thru traffic to utilize left turn lane, because the intersection without left turn pocket has left turn signal interval. In this situation, it seems not to be valid to calculate capacity, delay, and signal timings by conventional methods. By critical lane technique, capacity increases as cycle length increases. However, when thru traffic utilize LT lane, the capacity varies according to LT volume, LT interval as well as cycle length, which implies that specific cycle length and LT interval exist to maximize capacity for given LT volume. The study is designed is designed to calculate utilization factors of LT lane for thru traffic and capacities, and identify signal timings to yield maximum capacity. The experimental design involved has 3 variables; 1)LT volumes at each approach(20-300 vph), 2)cycle lengths (60-220 sec), and 3)LT intervals(2.6-42 sec) for one scenario of isolated intersection crossing two 6-lanes streets. For LT volume of 50-150 vph, capacity calculated by using the utilization factor is about 25% higher than that by critical lane method. The range of optimum cycle length to yield maximum capapcity for LT volume less than 120 vph is 140-180 sec, and increases as LT volume increases. The optimum LT interval to yield maximum capacity is longer than the intrval necessary to accommodate LT volume at saturation flow rate.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권3호
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• pp.213-223
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• 2013

A unified channel thermal noise model valid in all operation regions is presented for short channel MOS transistors. It is based on smooth interpolation between weak and strong inversion models and consistent physical model including velocity saturation, channel length modulation, and carrier heating. From testing for noise benchmark and comparing with published noise data, it is shown that the proposed noise model could be useful in simulating the MOSFET channel thermal noise in all operation regions.

• 한국지능시스템학회:학술대회논문집
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• 한국퍼지및지능시스템학회 1996년도 추계학술대회 학술발표 논문집
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• pp.198-207
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• 1996

Electro sensitive traffic system can't consider passenger car unit, so, it causes start up delay time and passenger waiting time. In this paper, it antecedently creates optimal traffic cycle of passenger car unit at the bottom traffic intersection. But, sometimes it can make mistakes due to changes in car weight, car speed, and control of feed-back data. Moreover, to prevent spillback, it can adapt control even though upper traffic intersection has a different saturation rate, road length, road slope and road width.

• Journal of Magnetics
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• 제21권3호
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• pp.437-441
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• 2016

Dipole model based analytical expression is proposed to estimate the length and depth of the rectangular defect on ferromagnetic pipe. Among the three leakage profiles of Magnetic Flux Leakage (MFL), radial and axial leakage profiles are considered in this work. Permeability variation of the specimen is ignored by considering the flux density as close to saturation level of the inspected specimen. Comparing the profile of both the components, radial leakage profile furnishes the better estimation of defect parameter. This is evident from the results of error percentage of length and depth of the defect. Normalized pattern of the proposed analytical model radial leakage profile is good agreement with the experimentally obtained profile support the performance of proposed expression.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.189-192
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• 2001

We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.

• 대한교통학회지
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• 제9권1호
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• pp.47-56
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• 1991

With respect to stochastic delays at linked signals the solid quantitative information has not been available as yet. On the basis of field data the values of "I" (variance-mean ration of flow) were related with the rate of flow. The stochastic delays with specific "I" values were obtained from the distribution of overflow queue, which were calculated by the use of Markov chains. This examination of the results led to the derivation of a simple method for calculating stochastic dclays through the introduction of "I" into Miller's model. The good agreement was shown between the model and the field. The relationships between the cycle lengths and delays were examinated in a large number of conditions with regard to degree of saturation. signal split and link length. Within the practical range of cycle length uniform delays were dominant and no critical point was found in terms of minimum, delay. In highly saturated conditions however the weight of stochastic delay is noticeable.