• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.54-60
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• 1994

In this paper, we present the analytical models for the change of the lateral electric field distribution and the velocity saturation region length with the electron trapping of stressed SC-PMOSFET in the saturation region. To derive the hot-electron-induced lateral electric field of stressed SC-PMOSFET. Ko's pseudo two dimensional box model in the saturation region which illustrates the analysis of the velocity saturation region is modified under the condition of electron trapping in the oxide near the drain region. From the results, we have the following lateral electric field in the y-direction, that is, E(y) ES1satT.cosh(y/l) qNS1tT.sinh(y/l)/lCox. It is shown that the trapped electrons influence the field in the drain region. decreasing the lateral electric field. Calculated velocity saturaion length increases with the trapped electrons. increasing the drain current of stressed SCPMOSFET. This results well explain the HEIP phenomenon of PMOSFET's.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.1
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• pp.14-21
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• 1998

In the conventional GaAs MESFET circuit simulation, the DC and transient simulation results are often failed due to the discontinuities of the first and second order derivatives arising from the use of separate models in linear, saturation, and transition regions. In this paper, we propose a unified drain current-voltage model by using a unified channel length modulation effect that is derived by extending the channel length modulation effect in the saturation region to the linear region. Calculated results from the proposed drain current-voltage model agree well with the results of Shur model. Also, we propose a unified capacitance model for linear, transition, and saturation regions by using a unified channel length modulation effect. Its results from the proposed capacitance model agree well with 2-D device simulation results. Thus, the proposed models are expected to be useful in circuit simulations.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.9
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• pp.55-59
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• 2013

A new method using RF Ids determined from measured S-parameters is proposed to extract the gate-voltage dependent effective carrier velocity of bulk MOSFETs in the saturation region without additional dc Ids measurement data suffering parasitic resistance effect that becomes larger with continuous down-scaling to sub-$0.1{\mu}m$. This method also allows us to extract the carrier velocity in the saturation region without the difficult extraction of bias-dependent parasitic gate-source capacitance and effective channel length. Using the RF technique, the electron velocity overshoot exceeding the bulk saturation velocity is observed in bulk N-MOSFETs with a polysilicon gate length of $0.065{\mu}m$.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1243-1249
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• 2004

This study is focused on the comparison between the internal saturation temperature of the working fluid and the surface temperature of adiabatic zone of two-phase closed thermosyphons with various helical grooves. Distilled water, methanol and ethanol have been used as the working fluid. In the present work, a copper tube of the length of 1200mm and 14.28mm of inside diameter is used as the container of the thermosyphon. Each of the evaporator and the condenser section has a length of 550mm, while the remaining part of the thermosyphon tube is adiabatic section. A experimental study was carried out for analyzing the performances of having 50, 60, 70, 80, 90 helical grooves. A plain thermosyphon having the same inner and outer diameter as the grooved thermosyphons is also tested for the comparison. The results show that the numbers of grooves and the type of working fluids are very important factors for the operation of thermosyphons. A good agreement between the internal saturation temperature of working fluid and the surface temperature of adiabatic zone of two-phase closed thermosyphons with various helical grooves is obtained.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2000.10a
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• pp.377-386
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• 2000

Hybrid mass dampers consist of passive tuned mass dampers and active mass dampers. They have the advantage that passive tuned mass dampers are still operated even when active mass dampers are stopped by excessive disturbances or power failure. This paper begins first with the comparative analysis of tuned mass dampers, hybrid mass dampers, and active mass dampers. Next more detailed study is carried out on the hybrid mass dampers: cascade hybrid mass dampers (CHMD) and active tuned mass dampers (ATMD). CHMD is regarded as more reasonable device because of its lighter active mass than ATMD's. However CHMD can not neglect stroke saturation problem caused by the length limitation of active damper mass. We compensate the saturation problem with nonlinear restoring force. The restoring force is calculated based on the states and phases of active mass dampers and added to the control force. It is shown that the presented compensation method prevents CHMD from saturation behavior without apparent changes of control force and responses compared to those in case of not considering the saturation problem.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.21-28
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• 2008

In this paper, we suggest an analytical model that can derive the I-V characteristics in the saturation region of a short channel GaAs MESFET. Instead of the pinch-off concept that has been used in the conventional models we can derive the two-dimensional potential in the depletion region in order that the velocity saturation region cannot be pinched-off and the current continuity condition can be satisfied. Obtained expression for the velocity saturation length is expressed in terms of the total channel length, channel doping density, gate voltage, and drain voltage. Compared with the conventional channel length shortening models, the present model seems to be considerably accurate and more reasonable in explaining the Early effect.

• The Journal of the Korea Contents Association
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• v.16 no.8
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• pp.671-680
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• 2016

This research suggested a new real-time traffic signal control algorithm using fusion data of the travel time and the occupancy rate. This research applied the travel time data of traffic information system to traffic signal operation, and developed the signal control process using the degree of saturation that was estimated from the travel time data. This algorithm estimates a queue length from the travel time based on a deterministic delay model, and includes the process to change from the queue length to the degree of saturation. In addition, this model can calculate the traffic signal timings using fusion data of the travel time and the occupancy rate based on the saturation degree. The micro simulation analysis was conducted for effectiveness evaluation. We checked that the average delay decreased by up to 27 percent. In addition, we checked that this signal control algorithm could respond to a traffic condition of oversaturation and detector breakdown effectively and usefully. This research has important contribution to apply the traffic information system to traffic signal operation sectors.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.333-336
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• 2001

The transient response in PDFA(Praseodymium-Doped Fiber Amplifier) is theoretically investigated. The PDFA has the spectral gain band in 1.3${\mu}{\textrm}{m}$. The transient model includes the transient buildup of the population inversion, the pump power, and the signal power and their transient variation along the fiber amplifier. The numerical analysis of transient model can predict the gain saturation, the variation of pump power and the gain as a function of the fiber length. It also shows the gain saturation and recovery effects depending on the pumping rate lead to distortion and saturation in the amplification of optical pulse. The results of numerical analysis, for the case of the Pr ion concentration of 1000ppm and the pump power of 0.5W the gain saturation is obtained 30dB at the length of 5m and the saturation time of upper level is 250 $mutextrm{s}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.281-285
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• 2020

Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.5
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• pp.531-539
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• 1991

We develop an analytical model of the static and the dynamic characteristics of amorphous silicon thin film transistors (a-Si TFTs) in order to incorporate into a widely used circuit simulator such as SPICE. The critical parameters considered in our analytical model of a-Si TFT are the power factor (XN) of saturation source-drain current and the effective channel length (L') at saturation region. The power factor, XN must not always obey so-called