• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.181-184
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• 2003

Quench and recovery process of high-temperature -superconductor (HTS) film deposited on the sapphire substrate is studied numerically. The quench is developed by fault current and the superconductivity is recovered by convection of heat into coolant. After the fault current, the HTS film experiences the quench state, current sharing state, and finally recovers the superconductivity. Numerical results of this study are compared to the previous experimental results, and shows that this numerical work can explain the mechanism of quench/recovery characteristics of HTS film.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.164-164
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• 2012

청색 발광 다이오드의 광추출 효율 향상 및 전기적 특성 향상을 위하여 기판이 되는 사파이어에 마이크로급 패턴을 형성하는 공정이 일반적으로 사용되고 있다. 기존의 공정과는 달리, 저가의 간단한 공정을 통해 쉽게 유사한 성능 향상을 얻기 위하여, 나노임프린트 리소그래피 공정을 도입하여 사파이어 기판 상에 일정한 주기와 형태를 갖는 나노 패턴을 형성하였으며, 이를 이용하여 제작한 발광 다이오드의 성능이 전기적, 광학적 측면에서 크게 향상되었음을 확인할 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.142-142
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• 2011

Epitaxial $CuCrO_2$ thin films have been grown on single crystal substrate of c-plane $Al_2O_3$, $SrTiO_3$, YSZ and Quarts by laser ablation of a $CuCrO_2$ target using 266nm radiation from a Nd:YAG laser. X-ray measurements indicate that the $CuCrO_2$ grows epitaxially on all substrate, with its orientation dependent on the kinds of substrates. Most of the layer were polycrystalline with (001), (015) and random as the dominant surface orientation on c-plane YSZ, $SrTiO_3$ and quarts substrate, respectively. (001) orientated $CuCrO_2$ grows on C-plane $Al_2O_3$ and YSZ substrate, (015) orientated $CuCrO_2$ films are found on c-plane $SrTiO_3$ substrate and random orientated $CuCrO_2$ films grows on quarts substrate. These data are compared with the in-plane orientation and the mismatch of the $CuCrO_2$ and each substrate lattices in an attempt to relate the preferred orientation to the plane of the sapphire on which it is grown. Further characterization show that the grain size of the films increases for a substrate temperature increase, whereas the electrical properties of $CuCrO_2$ thin films depend upon their crystalline orientation.

• Journal of the Optical Society of Korea
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• 제7권3호
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• pp.166-173
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• 2003

This paper presents micromachining results on planar-lightwave-circuit (PLC) chips with Si substrate and the quartz substrate by using Ti:Sapphire femtosecond-pulsed laser. The ablation process with femtosecond laser pulses generates nothing of contamination, molten zone, microcracks, shock wave, delamination and recast layer. We also showed that the micromachine for PLC using femtosecond pulsed lasers is superior to that using nanosecond pulsed lasers. The insertion loss and the optical return loss of the 1 ${\times}$ 8 optical power splitters packaged with micromachined input- and output-port U-grooves were less than 11.0 ㏈ and more than 55 ㏈, respectively. The wavelength dependent loss (WDL) was distributed within $\pm$0.6 ㏈ and the polarization dependent loss (PDL) was less than 0.2 ㏈.

• 한국통신학회논문지
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• 제21권1호
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• pp.206-213
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• 1996

The spectral-domain methos has been applied to an analysis of a open microstrip line on a dielectrically biaxial anisotropic substrate which takes into account both weak and tight anisotropy effect, which are very important in high-requency applications such as optical modulator, MMIC, etc.. Numerical results of propagation characteristics are validated against the data previously published for special dielectrically weak anisotropic cases(sapphire, Epsilam-10) and New data are calculated for dielectrically tight anisotropic case(LiNb $O_{3}$). Data are for these anisotropic substrates presented to illustrate the effect of three different orientations of the principle dielectric axes. It can be derived from the calculated data in this paper that component of dielectric tensor(.epsilon.$_{vv}$ ) in y-axis which is normal to microstrip-laid plane is important factor in propagation characteristics.

• 한국세라믹학회지
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• 제44권3호
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• pp.142-146
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• 2007

High-quality one-dimensional GaN nanorods and nanowires were synthesized on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffraction, scanning and transmission electron microscopy, and photoluminescence techniques. Full substrate coverage of densely packed, uniform, straight and aligned one-dimensional GaN nanowires with a diameter of 80nm were grown at $700{\sim}900^{\circ}C$. The X-ray diffraction patterns, transmission electron microscopic image, and selective area electron diffraction patterns indicate that the one-dimensional GaN nanostructures are a pure single crystalline and preferentially oriented in the [001] direction. We observed high optical quality of GaN nanowires by photoluminescence analysis.

• 한국정보시스템학회지:정보시스템연구
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• 제20권3호
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• pp.111-127
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• 2011

This study is intended for international cooperation in the field of LED were analyzed. The results, LED wide coverage areas, and a promising future is expected to grow fast enough to occupancy for a major national technology is a competitive situation. Chip Scale Package, including our country, such as LED manufacturing technology that might be competitive in parts, but new technologies such as renal substrate R&D and technology development still active preemption is not the situation. Renal substrate, particularly, large-diameter sapphire, large size/large LED manufacturers, such as a promising area for future research and development support will be needed. To do this, previous research in this area and the U.S., Japan cooperation in such studies also will need to expand. Bibliometrics way through this study, analytical techniques and analytical tools used in the integrated analysis of the usefulness and necessity of the system development were found.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.888-890
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• 1999

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition using a Nd:YAG laser with the wavelength of 355 nm at an oxygen pressure of 350 mTorr. In order to investigate the effect of the substrate temperature on the properties of ZnO thin films, the experiment has been performed at various substrate temperatures in the range of $200^{\circ}C$ to $700^{\circ}C$. According to XRD, (002) textured ZnO films of high crystalline quality have been obtained by pulsed laser deposition technique. However, the intensity of UV emission is mostly depending on the stoichiometry of ZnO films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.54-57
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266 m. During deposition, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $400^{\circ}C$ and flow rate of 350 sccm, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by diffraction (XRD), SEM and the optical of the ZnO were characterized by photoluminescence (PL).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.95-98
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• 1999

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films at an oxygen pressure of 350 mTorr, the experiment has been Performed at various substrate temperatures in the range of 20$0^{\circ}C$ to $700^{\circ}C$. According to XRD, (002) textured ZnO films of high crystalline quality have been obtained and the intensity of UV emission was the highest at 40$0^{\circ}C$ substrate temperature.