• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.365-368
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• 2001

입사면에서 발생하는 열을 효율적으로 제거하기 위하여 Yb:YAG 결정의 표면에 sapphire 창을 부착하여 레이저를 발진 시켰다. Yb:YAG 결정에서 발생하는 열이 sapphire 창을 통하여 구리판으로 전달되는 경우 와 Yb:YAG 결정의 측면에서 냉각하는 경우의 레이저 출력을 측정하여 각각의 레이저 발진 특성을 비교하여 보았다. 여기면을 sapphire 창으로 냉각하는 micro-chip Yb:YAG 레이저의 레이저 에너지 전환 효율은 38%였으며 레이저 발진 문턱값은 4 kw/mm$^2$, slope efficiency는 56%로 측정되었다. Sapphire 창을 사용하는 경우 표면에서의 열전달도는 10 W/mm$^2$이상으로 관측되었다. Yb:YAG의 도핑율, 출력경의 반사율 등을 레이저 변수를 최적화할 경우 같은 구조에서 50 W급 레이저도 발진 가능할 것으로 예상된다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.157-159
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• 1998

Sapphire crystals were grown by Horizontal Bridgman method. The effects of sliding rate (growth rate) of Molybdenum container, growth atmosphere, temperature gradient and orientation of see on crystal qualities were investigated. The size of the crystals grown was up to 150-200 mm in length, 90 mm in width and 25-35 mm in thickness. Crystals grown under the optimum conditions were colorless, transparent and could not be observed and macroscopic defects, such as bubbles, cracks, twins and mosaic structure. With the grown crystals, prototypes of sapphire substrate for blue wafers were characterized. As a result, we can get hight quality of sapphire wafers with c-axis, 1.5 inches in diameters and 0.33 mm in thickess.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.238-239
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• 2001

sub-30fs 펄스폭의 상용 Ti：sapphire 레이저시스템에 대한 펄스압축기 및 2차 조화파 발생기를 제작하여 특성을 평가하였다. 그림la에서 82MHz의 주파수로 모드록되는 상용 Ti：sapphire 레이저 (Spectra-Physics Millennia/Tsunami laser)의 출력이 반사경 Ml, M2를 거쳐 펄스압축기에 입사되고 압축되어 나온 펄스가 다시 M6, M7를 거쳐 2차 조화파발생기로 입사되는 2단구조로 설계되었다. 압축기에 입사되기전 평균파워는 파장 800nm에서 520mW로 측정되었으며, 측정된 스펙트럼 반치폭 47nm에 (그림 2a)에 대해 chirp-free sech$^2$t 펄스로 가정할 경우 본 레이저시스템의 변환한계 펄스폭은 14.5fs로 계산된다. (중략)

• Journal of the Optical Society of Korea
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• v.12 no.3
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• pp.186-191
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• 2008

A phase retrieval method using an error reduction algorithm is developed for reconstructing a wavefront aberration of an 100-TW Ti:sapphire laser pulse from the measurement of a focal spot. The phase retrieval method can successfully reconstruct a wavefront aberration of a 100-TW Ti:sapphire laser pulse, and the reconstructed wavefront aberration shows a good agreement with the wavefront aberration measured with a wavefront sensor. The effect of the dynamic range and the intensity noise on the reconstruction is also investigated in reconstructing a wavefront aberration of an 100-TW Ti:sapphire laser pulse.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.6
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• pp.240-243
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• 2006

The significant color enhancement in low quality Australian natural sapphire has been achieved by a hydrothermal method. The optimal conditions for the color enhancement of Australian natural sapphire were as follows; hydrothermal reaction temperature: $320{\sim}350^{\circ}C$, duration : 3 days, hydrothermal solvent: 2 M NaOH solution. After the hydrothermal treatment, Australian natural sapphires of transparent colors were obtained, and their grades were found to be improved from commercial to middle/top grade by value chart analysis.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.6
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• pp.241-245
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• 2003

ZnO thin films on (l00) p-type Si and sapphire substrates have been deposited by a pulsed laser deposition technique using an Nd:YAG laser with a wavelength of 266 nm. The influence of the deposition parameters such as oxygen pressure, substrate temperature and laser energy density on the properties of the grown films was studied. The experiments were performed for substrate temperatures in the range of 200∼50$0^{\circ}C$ and oxygen pressure in the range of 100∼700 sccm. All of the films grown in this experiment show strong c-axis orientation with (002) textured ZnO peak. With increasing substrate temperature, the FWHM (full width at half maximum) and surface roughness were decreased. In the case of using sapphire substrate, the intensity of PL spectra increased with increasing ambient oxygen flow rate. We investigated the structural and morphological properties of ZnO thin films using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM).

• Journal of Magnetics
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• v.7 no.2
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• pp.51-54
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• 2002

The crystallization of amorphous Ba-ferrite/sapphire(001) thin films was studied in real-time synchrotron x-ray scattering experiments. In the sputter-grown amorphous films, we found the existence of epitaxial $Fe_3O_4$ interfacial crystallites (50-${\AA}$-thick), well aligned $[0.03^circ$full-width at half-maximum (FWHM)] to the sapphire [001] direction. The amorphous precursor was crystallized to epitaxial Ba-ferrite and \alpha-Fe_2O_3$grains in two steps; i) the nucleation of crystalline \alpha-Fe_2O_3$ phase started at $300^circ{C}$ together with the transformation of the $Fe_3O_4$ crystallites to the \alpha-Fe_2O_3$ crystallites, ii) the nucleation of Ba-ferrite phase occurred at temperature above $600^circ{C}$. In the crystallized films irrespective of the film thickness, the crystal domain size of the \alpha-Fe_2O_3$grains was about 250 ${\AA}$ in the film plane, similar to that of the Ba-ferrite grains.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.784-788
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• 2000

The Vickers microhardness was measured on the basal (0001) plane of sapphire single crystals in the temperature range from 25$^{\circ}C$to 1000$^{\circ}C$. The substructure surrounding the indents was investigated using selective chemical polishing and etching, optical microscopy, and trasmission electron microscopy (TEM). At room temperature, cracks were predominant, and at intermediate temperatures (400$^{\circ}C$and 600$^{\circ}C$), extensive rhombohedral twinning was observed. On the other hand, at higher temperatures, prism plane slip bands on prism plane {1120}(원문참조) were dominant in the microstructure. TEM observations revealed that the dislocation substructure at the vicinity of the indents consisted of fairly straight dislocations lying in basal and/or prism planes and aligned along the <1100> and <1120> directions. The details of the glide dissociation of perfect <110> screw dislocations into three collinear 1/3<1100> partials on the prism plane and the Peierls potential for sapphire single crystals were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.106-107
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• 2007

We fabricated anodic aluminium oxides (AAO) on Si and sapphire substrates from the electrochemical reactions of thin AI films in an aqueous solution of oxalic acid. The thin AI films have deposited on Si and Sapphire substructure by using E-beam evaporation and thermal evaporation, respectively. The formation of AAO structures has investigated from FE-SEM measurement image and showed randomly distributed phase of nanoholes instead of the periodic lattice of photonic crystals. The AAO structure on sapphire shows the double layers of nanoholes.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.