• Proceedings of the Korean Society of Potoscience Conference
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• spring
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• pp.35-35
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• 1996

• Maxillofacial Plastic and Reconstructive Surgery
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• v.42
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• pp.22.1-22.6
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• 2020

Introduction: Facial fractures (FFs) occur after high- and low-energy trauma; differences in associated injuries and outcomes have not been well articulated. Objective: To compare the epidemiology, management, and outcomes of patients suffering FFs from high-energy and low-energy mechanisms. Methods: We conducted a 6-year retrospective local trauma registry analysis of adults aged 18-55 years old that suffered a FF treated at the Santa Barbara Cottage Hospital. Fracture patterns, concomitant injuries, procedures, and outcomes were compared between patients that suffered a high-energy mechanism (HEM: motor vehicle crash, bicycle crash, auto versus pedestrian, falls from height > 20 feet) and those that suffered a low-energy mechanism (LEM: assault, ground-level falls) of injury. Results: FFs occurred in 123 patients, 25 from an HEM and 98 from an LEM. Rates of Le Fort (HEM 12% vs. LEM 3%, P = 0.10), mandible (HEM 20% vs. LEM 38%, P = 0.11), midface (HEM 84% vs. LEM 67%, P = 0.14), and upper face (HEM 24% vs. LEM 13%, P = 0.217) fractures did not significantly differ between the HEM and LEM groups, nor did facial operative rates (HEM 28% vs. LEM 40%, P = 0.36). FFs after an HEM event were associated with increased Injury Severity Scores (HEM 16.8 vs. LEM 7.5, P <0.001), ICU admittance (HEM 60% vs. LEM 13.3%, P <0.001), intracranial hemorrhage (ICH) (HEM 52% vs. LEM 15%, P <0.001), cervical spine fractures (HEM 12% vs. LEM 0%, P = 0.008), truncal/lower extremity injuries (HEM 60% vs. LEM 6%, P <0.001), neurosurgical procedures for the management of ICH (HEM 54% vs. LEM 36%, P = 0.003), and decreased Glasgow Coma Score on arrival (HEM 11.7 vs. LEM 14.2, P <0.001). Conclusion: FFs after HEM events were associated with severe and multifocal injuries. FFs after LEM events were associated with ICH, concussions, and cervical spine fractures. Mechanism-based screening strategies will allow for the appropriate detection and management of injuries that occur concomitant to FFs. Type of study: Retrospective cohort study. Level of evidence: Level III.

• Proceedings of the Optical Society of Korea Conference
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• 1995.06a
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• pp.161-168
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• 1995

Nonlinear optical absorption in solid films of poly(3-octyl thiophene) (P3OT) sensitized with methanofullerene was inverstigated for wacelengths from 620 to 960nm. The nonlinear absorption is ehnanced over that in either of the component materials by more than two orders orders of magitude at 760nm. The large nonlinearity results from effient photoinduced interm olecular charge transfer from P3OT to methanofullerene, followed by absorption in the charge separated excited state. P3OT/fullerene films are promising as reverse saturable absorbers and the optical limiting performance is demonstrated at 760nm.

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.90-90
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• 1997

• Proceedings of the Korean Biophysical Society Conference
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• 2003.06a
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• pp.67-67
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• 2003

Filamentous actin (F-actin) is a two stranded long helix that performs structural function in eukaryotic cells. F-actin had been assembled from Alexa-labeled G-actin and had been confined in microchannel. The fluctuation of single filaments was observed by fluorescence optical microscopy. We measured Tangent-tangent Correlation Function G(s) (where s is the distance along the contour of the chain), which tells us the confining wall effect of wormlike semi-flexible polymers as well as the flexural rigidity, such as persistence length.

• Optical Science and Technology
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• v.9 no.4
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• pp.32-39
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• 2005

• Journal of Broadcast Engineering
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• v.5 no.1
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• pp.23-30
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.14-14
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• 2011

AlInN has been studied extensively over the past few years due to its interesting material properties that are not present in other ternary nitrides. However, basic material study of AlInN has not been reported as much compared to device applications due to the difficulty in the growth. We have performed the material studies from various aspects. A secondary ion mass spectrometry (SIMS) has shown high oxygen content above $1{\times}10^{18}\;cm^{-3}$ with its insensitivity to the growth conditions. While the free carrier concentration observed by the capacitance-voltage (C-V) measurements was about $3{\times}10^{17}\;cm^{-3}$, the activation energy measured by temperature dependent C-V was only about 4 meV. Si doped AlInN (Si level ${\sim}2{\times}10^{18}\;cm^{-3}$) showed almost no carrier freeze-out at carrier density of $1{\times}10^{18}\;cm^{-3}$. More studies were carried out with a transmission electron microscopy, time-resolved photoluminescence and other analytical techniques to understand the results from SIMS and C-V studies. In this report, we will discuss the possible correlations between the abnormal characteristics in AlInN.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.43-44
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• 1997

We repport the effects of active nitrogens on the low-tempperature growth of GaN by a remote pplasma-enhanced metal-organic chemical vappor depposition method. the emission intensities of active nitrogens increase with fr ppower and nitrogen flow rate, but decrease with total reactor ppressure. Low-tempperature growth of GaN are greatly affected by the concentrations of active nitrogens and its concentrations are closely related with the emission intensities.

• Water for future
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• v.16 no.2
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• pp.92-105
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• 1983