• Korean Journal of Materials Research
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• v.8 no.7
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• pp.591-595
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE) and its some properties were investigated. The GaN substrate, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 100$\textrm{mm}^2$ area, were obtained by HVPE growth of thick film GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of $C_o$= 5.18486 $\AA$ and a FWHM of DCXRD was 650 arcsec for the single crystalline GaN substrate. The low temperature PL spectrum consist of three excitonic emission and a deep D- A pair recombination at 1.8eV. The Raman E, (high) mode frequency was 567$cm^{-1}$ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283$cm^3$<\ulcornerTEX>/ V.sand 1.1$\times$$10^{18}cm^{-3}$, respectively.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.9-12
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• 2003

The electrical properties of stabilized amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. Carrier mobility was measured using time-of-flight (TOF) measurements to investigate the transport properties of holes and electrons in stabilized a-Se film. A laser beam with pulse duration of 5 ns and wavelength of 350nm was illuminated on the surface of a-Se with thickness of 400 $\mu\textrm{m}$. The photo induced signals of a-Se film as a function of time were measured. The measured transit times of hole and electron were about 8.73${\mu}\textrm{s}$ and 229.17${\mu}\textrm{s}$, respectively. The hole and electron drift mobilities decreases with increase of electric field up to 4V/$\mu\textrm{m}$. Above 4V/$\mu\textrm{m}$, the measured drift mobilities exhibited no observable dependence with respect to electric field. The experimental results showed that the hole and electron drifting mobility were 0.04584 $\textrm{cm}^2$ V$\^$-1/s$\^$-1/ sand 0.00174 $\textrm{cm}^2$V$\^$-1/s$\^$-1/ at 10 V/$\mu\textrm{m}$.

• Journal of Korean Society of Environmental Engineers
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• v.39 no.3
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• pp.155-163
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• 2017

Membrane filtration has become more popular in drinking water treatment recently, since the filtration can control not only particulate matters but also pathogenic microorganisms such as giardia and cryptosporidium very effectively. Pilot-scale ($120m^3/d$ of treatment capacity) and test-bed ($25,000m^3/d$ of treatment capacity) microfiltration experiments were conducted to find optimum operating mode and the critical flux. Optimum operating mode of pilot-test was assessed as inflow 1.0 min, filtration 36.5 min, air backwash 0.9 min, backwash 1.0 min and outflow 1.0 min with 50 LMH ($L/min{\cdot}m3^$) of critical flux. Critical Flux was calculated to be $50L/m^2-h$ (within TMP 0.5 bar) based on the increase formula of the transmembrane pressure difference according to the change of time at Flux 20, 40, 56 and 62 LMH in pilot operation. Chemical cleaning was first acid washed twice, and alkali washing was performed secondarily, and a recovery rate of 95% was obtained in the test-bed plant. The results of operating under these appropriate conditions are as follows. Turbidity of treated water were 0.028, 0.024, 0.026 and 0.028 NTU in spring, summer, autumn and winter time, respectively. Microfiltration has superior treatment capability and performance characteristics in removing suspended solids and colloidal materials, which are the main cause of turbidity and important carrier of metal elements, and it has shown great potential in being an economically substitute to traditional processes (sand filtration).