• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.423-426
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• 2000

The 3-D $31.5$\times$31.5$\times$2.5mm$^3$model of contour vibration mode piezoelectric transformer with Pb($Ni_{1/2}$$W_{1/2}$)$O_3$-Pb(Zr,Ti)$O_3$ ceramics was simulated by ANSYS according to the dot size 17, 18, 19, 20, 21 $mm\phi$ and analyzed the results. The mechanical quality factor of the 3-D model was decreased with the dot size and increased as 2605 at 20 $mm\phi$ and after then decreased again. The output voltage of that sample was 74123 [V] and the maximum stress of the dot electrode at that sample was 288[$10^7$N/$m^2$] and the maximum displacement of the ring electrode at that sample was 128 [$\mu\textrm{m}$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.108-109
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• 2006

ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowires and nanorods have received intensive attention because of their potential applications in various fields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of the vertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si (111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at $400^{\circ}C$ and their effect on the formation of ZnO nanorods at $300^{\circ}C$ was evaluated by FESEM, XRD, and PL. The synthesized ZnO nanorods on the ZnO film show a high quality, a large-scale uniformity, and a vertical alignment along the [0001]ZnO compared to those on the Si substrates showing the randomly inclined ZnO nanorods. For sample using ZnO buffer layer, 1D ZnO nanorods with diameters of 150-200 nm were successively fabricated at very low growth temperature, while for sample without ZnO buffer the ZnO films with rough surface were grown.

• Journal of Korean Society of Transportation
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• v.23 no.1
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• pp.93-102
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• 2005

An Origin-Destination (O/D) is considered as one of the important information in route choices and trip assignments. A household interview survey is deemed to be the traditional and the most widely used method in making sample O/D and its conversion to the total O/D. Some researchers have studied to estimate dynamic O/D from the relationship between link volumes and trip assignment model. Nowadays, owing to the recent rapid spread of cellular phones. Location information of the cellular phone through the Base Station(BS) is considered as an alternative to O/D estimation. In this study, the methodology of generating BS-based O/D and the methodology of converting this O/D into an administrative district-based O/D are proposed. The information of GPS positions and cellular BS positions have acquired by establishing GPS equipment and cellular phone on taxies in Cheongju. Three weeks data are collected and used in estimating O/D by matching them on a digital map. Scatter diagram and sample correlation coefficients are used to investigate the similarity of the GPS-based O/D pattern among weeks, among days, and among times in day. The results show that there are few significant differences among weeks. But there is a difference in O/C pattern between weekday and weekend. Furthermore, there is a difference between morning peak and afternoon peak. Two methodologies are proposed to convert BS-based O/D into an administrative district-based O/D. The first one is to use the distribution pattern of GPS coordinates, the other is to use the coverage area of the BSs. To validate such converted O/D, GPS O/D is used as a true value. The statical analyses through scatter diagram, MAE and RMSE shows that there is few significant defference of pattern between the estimated BS-based O/D and GPS O/D. In the case of using only cellular information, the methodology using coverage area of the BSs is recommended for estimating O/D.

• Progress in Superconductivity
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• v.9 no.1
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• pp.18-22
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• 2007

For interlayer tunneling spectroscopy using a small stack of $Bi_2Sr_2CaCu_2O_{8+x}$ (Bi-2212) intrinsic junctions in a high-bias range, large self-heating takes place due to the poor thermal conductivity of Bi-2212. In this study, we numerically estimate the self-heating around a Bi-2212 sample stack for I-V or dI/dV-V measurements. Our results show that the temperature discrepancy between the Bi-2212 sample stack and top Au electrodes due to bias-induced self-heating is small enough along the c-axis direction of Bi-2212. On the other hand, the lateral temperature discrepancy between the sample stack and the Bi-2212 on-chip thermometer stack can be as large as ${\sim}20\;K$ for the highest bias required to observe the pseudogap hump structure. We thus suggest a new in-situ ac thermometry, employing the Au current-bias electrode itself deposited on top of the sample stack as the resistive thermometer layer, which is supposed to allow safe temperature measurements for the interlayer tunneling spectroscopy.

• Journal of the Optical Society of Korea
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• v.17 no.6
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• pp.543-547
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• 2013

A temperature dependent (10K-290K) photoluminescence (PL) study for two differently prepared ZnO thin films (as-grown and O-plasma treated) is presented. Four characteristic peaks were identified for both samples: (i) neutral donor-bound excitons ($D^oX$), (ii) two electron satellites (TES), (iii) phonon replica of $D^oX$ ($D^oX$-1LO), and (iv) donor-acceptor pair transition (DAP). As the sample temperature increased, $D^oX$-1LO and DAP transitions became indistinct. This was accompanied by newly-rising emission of free electron-acceptor transitions (e, $A^o$). The spectral evolution with temperature for as-grown samples also showed the optical emission from free excitons, which became dominant at higher temperatures. Some features related to O-plasma were identified in PL spectra: (i) different positions of TES transitions (28meV lower than $D^oX$ for as-grown samples and 35meV for O-plasma treated samples), (ii) the decrease of spectral intensity in both emissions of $D^oX$ and DAP after O-plasma treatment, and (iii) no noticeable transition from free excitons after the O-plasma treatment.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.103-106
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• 2000

We have studied the magnetic properties in Bi$_2$Sr$_2$CaCu$_2$O$_8$ single crystal with columnar defects using micro Hall-probe array. We found that fold profiles inside sample were similar to the Bean's critical state model from the magnetic hysteresis measurement. In the magnetic relaxation measurement, the normalized relaxation rates were maximum near the center and decreased toward the edge of the sample expect zero gauss. The relaxation rates as a function of the temperature were maximum near the 40K and rapidly decreased both sides of the peak.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.360-366
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• 2006

We have performed density functional theory calculations for the surface structure of O/Pd(100)-p($2{\times}2$), formed by the adsorption of oxygen atoms of 0.25 ML. The oxygen atoms adsorb preferentially at the fourfold hollow site, and the calculated O-Pd bond length is $2,15{\AA}$, The first interlayer spacing ($d_{12}$) of Pd(100) expands by +0.8% due to the oxygen adsorption, which differs from the experimental value of +3.6% reported by a previous LEED study. Assuming that the LEED sample was possibly contaminated by hydrogen atoms, we also examined the effect of hydrogen impurities on the surface structure. Hydrogen atoms adsorbed on O/Pd(100)-p($2{\times}2$) are found to result in large expansions of $d_{12}$ of Pd(100). Our analysis estimates the amount of hydrogen atoms remaining on the LEED sample as -0.3 ML.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.8 s.99
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• pp.842-847
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• 2005

In this paper, we fabricated sheet-type EM wave absorbers for mobile phones by using sendusts and tested EM wave absorption of it. The band-width of EM wave absorbers coated with $Al_2O_3$ were larger than non-coated EM wave absorbers. Particle size decreased with increasing milling time, which made the result of increasing of EM wave absorption. The fabricated EM wave absorbers show a reflection coefficient 17.4 dB at 946 MHz for a 4 mm sample and 5 dB at 1.8 GHz for a 1 mm sample.

• Journal of Biomedical Engineering Research
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• v.11 no.1
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• pp.147-156
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• 1990

A two-dimensional pulsed doppler system for ultrasonic blood velocity doppler signals is studied and implemented. The second-order sampling method and serial data processing procedures are utillized in the sys- tem, which eliminates the untuning problems at phase channels in the quadrature detection method as well as in the channels of parallel data processing. rho digital signal processor used in this system allows a hardware savings and flexible design options. The efficiency of the various mean frequency estimators in the second-order sampling system is examined by computer simulation as a function of the intersequence sample delay time. The temporal delay for the quadrature component is changed from $1/(4f_o){\;}to{\;}3/(4f_o){\;}and{\;}5/(4f_o)$ where to is the center frequency of the transducer, It is found that autocorrelator is the optimum frequency estimator for the second-order sampling: with !he intersequence sample delay of $1/(4f_o){\;}to{\;}3/(4f_o){\;}and{\;}5/(4f_o)$. The qualitative variation and information proportional to blood velocity in the vessel system are obtained in the VIVO experiments.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.162-166
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• 2016

0.75BF-0.25BT ceramics were prepared by sintering at $980-1040^{\circ}C$ in air or under atmosphere powder. A sample with 1 mole %-excess $Bi_2O_3$ was also prepared to compensate for $Bi_2O_3$-evaporation. Physical and piezoelectric properties of these three samples were compared. When the sintering temperature increased from $980^{\circ}C$ to $1040^{\circ}C$, the density of the sample sintered in air decreased continuously due to Bi-evaporation. Due to the suppression of Bi-evaporation, the sample sintered under atmosphere powder had a higher density at sintering temperatures above $1000^{\circ}C$ than did the sample sintered in air. The addition of 1 mole %-excess $Bi_2O_3$ successfully compensated for Bi-evaporation and kept the density at the higher value until $1020^{\circ}C$. Grain size increased continuously when the sintering temperature increased from 980 to $1040^{\circ}C$, irrespective of the sintering atmosphere. When the sintering temperature increased, the piezoelectric constant ($d_{33}$) and the electromechanical coupling factor ($k_p$) increased for all samples. The sample with 1 mole % excess-$Bi_2O_3$ showed the highest density and the best piezoelectric properties at sintering temperature of $1020^{\circ}C$.