• 제목/요약/키워드: SUBSTRATE SIZE

검색결과 1,595건 처리시간 0.032초

처짐저감을 위한 OLED 증착 마스크-프레임 구조체

  • 문병민;정남희;조창상;김국원
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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    • pp.164-168
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    • 2007
  • Deformation of a shadow mask is one of the problems encountered during the deposition of organic materials for manufacturing large size OLED. The larger the glass substrate, the larger the shadow mask becomes. But as the size of the shadow mask increases, its deformation becomes more severe, thereby making it difficult to deposit organic materials in a precise pattern on a substrate. In this paper, a new type mask-frame structure is proposed. The proposed mask-frame structure making a curved mask has the ability of reducing drooping of mask. The test frame is fabricated and evaluation experiments are performed.

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아르곤 플라즈마처리에 의한 다결정 $Si_{1-x}Ge_x$박막의 표면거칠기 개선 (The Improvement of Surface Roughness of Poly-$Si_{1-x}Ge_x$Thin Film Using Ar Plasma Treatment)

  • 이승호;소명기
    • 한국세라믹학회지
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    • 제34권11호
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    • pp.1121-1128
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    • 1997
  • In this study, the Ar plasma treatment was used to improve the surface roughness of Poly-Si1-xGex thin film deposited by RTCVD. The surface roughness and the resistivity of Si1-xGex thin film were investigated with variation of Ar plasma treatment parameters (electrode distance, working pressure, time, substrate temperature and R.F power). When the Ar plasma treatment was used, the cluster size decreased by the surface etching effect due to the increasing surface collision energy of particles (ion, neutral atom) in plasma under the conditions of decreasing electrode distance and increasing pressure, time, temperature, and R. F power. Although the surface roughness value decreased by the reduction of the cluster size due to surface etching effect, however, the resistivity increased. This may be due to the surface damage caused by the increasing surface collision energy. It was concluded that the surface roughness could be improved by the Ar plasma treatment, while the resistivity was increased by the surface damage on the substrate.

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졸-겔법에 의한 PLZT 박막의 결정화 및 균열 생성 (Crystallization and Crack Formation in Sol-Gel PLZT Thin Films)

  • 안기철;이전국;김호기;노광수
    • 한국세라믹학회지
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    • 제29권3호
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    • pp.216-222
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    • 1992
  • PLZT thin films were prepared using sol-gel spin coating. The films mainly consisted of perovskite phase when heat treated at 600$^{\circ}C$ and in O2 or air atmosphere for 2 hours after 7 coating cycles. Cracks were formed when smaller than after 9 coating cycles. When ITO interlayer existed between Corning 7059 glass substrate and the film, cracks were not formed after 9 coating cycles, but cracks were formed after 11 coating cycles because of large volume change of the film contracting on the substrate during the heat treatment. In the observation of microstructure, the thin films have perovskite phase of about 2 $\mu\textrm{m}$ grain size and pyrochlore phase of 100∼200${\AA}$ grain size.

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플렉시블 디스플레이 백플레인 기술 (Backplane Technologies for Flexible Display)

  • 이용욱
    • 진공이야기
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    • 제1권2호
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    • pp.24-29
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    • 2014
  • Display is a key component in electronic devices. OLED is growing very fast recently due to the explosion of the smart phone market although still LCD is the dominating display technology in the display market at the moment. Also needs for the large area and high resolution TVs and flexible displays are increasing these days. Especially flexible display is expected to be one of the key technologies in mobile devices requiring small device size and large display size. Contrary to the conventional displays, flexible display requires organic materials for the substrate, the active driving element and also for the display element. Plastic film as a substrate, organic semiconductor as an active component of the transistor and organic light emitting materials or electronic paper as a display element are studied actively. In this article, mainly backplane technologies such as substrates and the transistor materials for flexible display will be introduced.

기판바이어스 인가에 따른 반응성 마그네트론 스퍼터링에 의한 TiN 코팅 (TiN Coatings by Reactive Magnetron Sputtering Under Various Substrate Bias Voltages)

  • 서평섭;전성용
    • 한국표면공학회지
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    • 제41권6호
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    • pp.287-291
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    • 2008
  • Reactively magnetron sputtered TiN films were deposited on Si wafers under varying bias voltage and characterized by X-ray diffraction, field-emission scanning electron microscopy and Nanoindentation. The films deposited under an Ar + $N_2$ atmosphere exhibited a mixed (200)-(111) orientation with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. The changes in texture and grain size of the TiN thin films are due to one or a combination of factors such as strain energy, surface free energy, surface diffusivity and adatom mobility. The influence of each factor depends on the processing conditions. The average deposition rate and grain size were calculated from FE-SEM images of the films indicating that the deposition rate was lower at the films deposited under bias voltage.

Patterned free-standing diamond field emitters for iarge area field emission display applications

  • Kim, Sung-Hoon
    • Journal of Korean Vacuum Science & Technology
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    • 제3권1호
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    • pp.10-15
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    • 1999
  • Using micro-wells on the Mo substrate, we could obtain various tubular-volcano-types of free-standing diamond field emitters by depositing a diamond film detaching the film and turning the film upside down. The field emission characteristics of these structures were investigated as a function of size, shape and the number density of the tubular-volcano-type diamond field emitters. The field emission characteristics, especially the current density, were greatly enhanced with increasing the number density of the tubular-volcano-type diamond field emitters on the Mo substrate. Based on these results, we suggest that the reduction of the well size can give better field emission characteristics by the increase in the number density of the tubular-volcano-type diamond field emitters. Finally, we suggest the feasibility of fabricating a large-area field emission display using our patterned tubular-volcano-type free-standing diamond field emitters.

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Ultra Thin 실리콘 웨이퍼를 이용한 RF-MEMS 소자의 웨이퍼 레벨 패키징 (Wafer Level Packaging of RF-MEMS Devices with Vertical feed-through)

  • 김용국;박윤권;김재경;주병권
    • 한국전기전자재료학회논문지
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    • 제16권12S호
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    • pp.1237-1241
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    • 2003
  • In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes lot vortical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. The packaged RF device has a reflection loss under 22 〔㏈〕 and a insertion loss of -0.04∼-0.08 〔㏈〕. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.

Co-Cr(-Ta) 층의 결정성 및 자기적 특성에 미치는 하지층 효과 (Underlayer effects on crystallographic and magnetic characteristics of Co-Cr(-Ta) layer)

  • 금민종;공석현;가출현;손인환;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.208-211
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    • 2000
  • We prepared Co-Cr-Ta and Co-Cr-Ta/Ti thin film for perpendicular magnetic recording media by facing targets sputtering system (FTS system). Ti underlayer effects on crystallographic and magnetic characteristics of Co-Cr-Ta perpendicular magnetic recording media have been investigated. Crystallgraphic and magnetic characteristic of prepared thin films were evaluated by x-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement. The coercivity and anisotropy field increase by introduced Ti underlayer when substrate temperature is higher than 150$^{\circ}C$. The c-axis dispersion angle and grain size of Co-Cr-Ta/Ti thin film is decrease than Co-Cr-Ta when substrate temperature is higher than 100$^{\circ}C$. Consequently, the use of a Ti underlayer highly orientated can be improved crystallographic and magnetic characteristics of Co-Cr -Ta perpendicular media layer.

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기판온도에 따른 ZnO박막의 결정구조 및 전기적 특성 (The effect of substrate temperature on crystallography and electrical properties of ZnO thin films)

  • 금민종;성하윤;손인환;장경욱;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.415-418
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    • 1999
  • In this paper we studied that the effect of substrate temperature on crystallography and electrical properties of ZnO thin films. Facing Targets Sputtering system can deposit thin films in plasma-free situation and change the deposition condition in wide range. And prepared thin film\`s c-axis orientation and grain size were analyzed by XRD(x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

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The Mechanism of Gold Deposition by Thermal Evaporation

  • Mark C. Barnes;Kim, Doh-Y.;Nong M. Hwang
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 2000년도 Proceedings of 2000 International Nano Crystals/Ceramics Forum and International Symposium on Intermaterials
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    • pp.127-142
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    • 2000
  • The charged cluster model states that chemical vapor deposition (CVD) begins with gas phase nucleation of charged clusters followed by cluster deposition on a substrate surface to form a thin film. A two-chambered CVD system, separated by a 1-mm orifice, was used to study gold deposition by thermal evaporation in order to determine if the CCM applies in this case. At a filament temperature of 1523 and 1773 K, the presence of nano-meter sized gold clusters was found to be positive and the cluster size and size distribution increased with increasing temperature. Small clusters were found to be amorphous and they combined with clusters already deposited on a substrate surface to form larger amorphous clusters on the surface. This work revealed that gold thin films deposited on a mica surface are the result of the sticking of 4-10 nm clusters. The topography of these films was similar to those reported previously under similar conditions.

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