• Journal of the Korean Magnetics Society
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• v.1 no.2
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• pp.1-8
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• 1991

The electronic and magnetic structure of Fe overlayers on W(110) is determined by means of the all-electron local spin density full potential linearized augmented plane wave (FLAPW) method with a single slab approach. Charge and spin densities, magnetic moments, contact hyperfine fields, and layer projected density of states (LDOS) are presented. For bilayer Fe coverage, we find magnetic moments to be 2.90 and 2.30 ${\mu}_B$ for the surface and subsurface Fe layers, respectively, corresponding to a 18% enhancement of the total magnetization compared with the calculated bulk value (2.22${\mu}_B$);For monolayer coverage the moment is 2.56 ${\mu}_B$ which is enhanced by 16% compared to bulk. Unusual changes in the magnetic hyperfine interaction are found in going from a monolayer to a bilayer coverage. Comparison of the results to the theoretical ones of the clean Fe(110) to discuss the hybridization and the negative pressure effects. We discuss our results by comparing them to experimental results.

• Journal of the Korean Magnetics Society
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• v.23 no.3
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• pp.98-103
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• 2013

The magnetic easy axis of the ferromagnetic layer for the dual-type GMR-SV (giant magnetoresistance-spin valve) having NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe multuilayer structure controlled by the post annealing treatment. The magnetoresistive curves of a dual-type IrMn based GMR-SV depending on the direction of the magnetic easy axis of the free and the pinned layers are measured by the different angles for the applied fields. By investigating the switching process of magnetization for an arbitrary measuring direction, the optimum annealing temperature having a steady and isotropy magnetic sensitivity of 2.0 %/Oe was $105^{\circ}C$. This result suggests that the in-plane orthogonal magnetization for the dual-type GMR-SV film can be used by a high sensitive biosensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.195-201
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• 2024

The low-temperature deposition of BaNi_(2-x)Co_xFe₁₆O₂₇ thin films with a Ba hexaferrite structure for electromagnetic shielding was studied. The BaNi_(2-x)Co_xFe₁₆O₂₇ thin films produced through the spin spray process were suitable for thin film deposition on a flexible substrate because it crystallized well at low temperature below 90℃. The change in shielding characteristics depending on the Co content of the BaNi_(2-x)Co_xFe₁₆O₂₇ thin film was investigated, and excellent shielding characteristics with S21 of -1 dB were obtained in a wide frequency range of 26~40 GHz when the Co content was 0.4 or more. The purpose of this study is to analyze changes in shielding properties caused by change in Co content in relation to phase changes in BaNi_(2-x)Co_xFe₁₆O₂₇ and obtain basic data for developing excellent flexible electromagnetic wave shielding materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.336-336
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• 2013

Zinc oxide (ZnO) based transparent oxide semiconductors have been studied due to their high transmittance and electrical conductivity. Pure ZnO have unstable optical and electrical properties at high temperatures but doped ZnO thin films can have stable optical and electrical properties. In this paper, transparent oxide semiconductors of Y-doped ZnO thin films prepared by sol-gel method. The ionic radius of $Y^{3+}$ (0.90 A) is close to that of $Zn^{2+}$ (0.74 A), which makes Y suitable dopant for ZnO thin films. The Sn-doped ZnO thin films were deposited onto quartz substrates with different atomic percentages of dopant which were Y/Zn = 0, 1, 2, 3, 4, and 5 at.%. These thin films were pre-heated at $150^{\circ}C$ for 10 min and then annealed at $500^{\circ}C$ or 1 h. The structural and optical properties of the Y-doped ZnO thin films were investigated using field-emission scanning electronmicroscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.42-45
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• 2001

The high permittivity are applied to DRAM and FRAM. (Ba,Sr)$TiO_3$ (EST) thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on $Pt/SiO_2/Si$ substrate at 4000 [rpm] for 10 seconds in a time coating. Coated specimens were dried at $90[^{\circ}C]$ for 5 minutes. Coating process was repeated from 3 times to 5 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2600-2800[$\AA$] in 3 times. Dielectric constant of thin films was little decreased at 1[KHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current was stable When the applied voltage was 0~3[V] Leakage current was $10^{9}\sim10^{11}$[A] at 0~3[V].

• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.695-700
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• 1993

In this study, we prepared Pb-Ti stock solution by sol-gel processing and deposited PbTiO3 thin film on a Pt coated SiO2/Si wafer by spin coating using the stock solution. We used lead acetate trihydrate and titanium isopropoxide. The stock solution was partially hydrolized and finally a 0.25M coating solution was prepared. We achieved spin coating at 4000rpm for 30 seconds and heated the thin film at 375$^{\circ}C$ for 5 minutes and at $600^{\circ}C$ for 5 minutes successively, first and second heating state. And the thin film was finally sintered at 90$0^{\circ}C$ for 1 hour in the air. The upper electrode of the thin film was made by gold sputtering and was cricle shape with radius 0.4mm. Measured dielectric constant, dissipation factor and phase transition temperature(Cuire Temp.) were about 275, 0.02 and 521$^{\circ}C$ respectively. To observe ferroelectric characteristics we calculated Pr(remnant polarization) and Ec(coercive field) byhysteresis curve. Ec was 72kV/cm and Pr was 11.46$\mu$C/$\textrm{cm}^2$.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.516-519
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• 2011

Indium tin oxide (ITO) coatings were made using an ITO slurry and an ITO sol. This was achieved by dispersing nanosized ITO powder in a mixed solvent without any dispersant and developing an adhesive ITO sol from indium acetate and tin tetrachloride in a mixture of DMF and n-butanol. Coating was carried out in one step by spin coating an ITO slurry, which was then followed by an ITO sol over it. Here, the sol penetrates into the nano ITO particle layers to make them adhere to each other as well as to a glass substrate. This is then followed by sintering at 500$^{\circ}C$ for 1 h to produce a uniform film consisting of ITO particles of about 50 nm and 10 nm. ITO films were obtained with sheet resistances from 450 to 1500 ohm/${\Box}$ by varying spin speed and concentration. Transmittance is higher than 90% at 550 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.366-366
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• 2010

Single crystalline Fe/NiO bilayers were epitaxially grown on Ag(001) and on MgO(001), and investigated by Low Energy Electron Diffraction (LEED), Magneto-Optic Kerr Effect (MOKE), and X-ray Magnetic Linear Dichorism (XMLD). We find that while the Fe film has an in-plane magnetization in both Fe/NiO/Ag(001) and Fe/NiO/MgO(001) systems, the NiO spins switch from out-of-plane direction in Fe/NiO/MgO(001) to in-plane direction in Fe/NiO/Ag(001). These two different NiO spin orientations generate remarkable different effects that the NiO induced magnetic anisotropy in the Fe film is much greater in Fe/NiO/Ag(001) than in Fe/NiO/MgO(001). XMLD measurement shows that the much greater magnetic anisotropy in Fe/NiO/Ag(001) is due to a 90o-coupling between the in-plane NiO spins and the in-plane Fe spins which causes a switching of the NiO spins during the Fe magnetization reversal.

• Bulletin of the Korean Chemical Society
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• v.22 no.1
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• pp.63-67
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• 2001

The photophysical properties and the singlet oxygen generation efficiency of tetrathiarubyrin have been investigated to elucidate the possibility of its use as a photodynamic therapy (PDT) photosensitizer by steady-state and time-resolved spectroscopic methods. The observed photophysical properties were affected by various molecular aspects, such as extended ${\pi}conjugation$, structural distortion, and internal heavy atom. The steady-state electronic absorption spectrum was red-shifted due to the extended $\pi-conjugation$, and the spin orbital coupling was enhanced by the structural distortion and the internal heavy atom effect. As a result of the enhanced spin orbital coupling, the triplet quantum yield increased to 0.90 $\pm$ 0.10 and the triplet state lifetime was shortened to 7.0 $\pm$ 1.2 ${\mu}s$. Since the triplet state decays at a relatively faster rate, the efficiency of the oxygen quenching of the triplet state decreases. The singlet oxygen quantum yield was estimated to be 0.52 $\pm$ 0.02, which is somewhat lower than expected. On the other hand, the efficiency of singlet oxygen generation during the oxygen quenching of triplet state, $f{\Delta}^T$, is near unity. Such high efficiency of singlet oxygen generation can be explained by the following two possible factors: The hydrogen bonding of ethanol which impedes the deactivation pathway of the charge transfer complex with oxygen to the ground state, the less probability of the aggregation formation.

• Korean Journal of Food Science and Technology
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• v.34 no.6
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• pp.1062-1066
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• 2002

Low field NMR was employed to discriminate the geographical origin of sesame seeds from Sudan, China, and Korea. Sudan sesame seeds had the lowest contents of moisture and crude fat. Chemical components of Korean and Chinese sesame seeds were similar, whereas relaxation times $(T_1-IR,\;T_1-SR)$ measeured through spin-lattice relaxation pluse techniques using 20 MHz NMR showed significant difference (p0.05). Canonical discriminant analysis could be used to identify the habitat of sesame seeds with over 90% accuracy of NMR results. Non-destructive and fast NMR techniques can be applied to classify Korean sesame seeds from those of other origins.