• Title/Summary/Keyword: SPICE simulation

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A Simulation-Based Analog Cell Synthesis with Improved Simulation Efficiency (시뮬레이션 효율을 향상시킨 시뮬레이션 기반의 아날로그 셀 합성)

  • 송병근;곽규달
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.10
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    • pp.8-16
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    • 1999
  • This paper presents a new simulation-based analog cell synthesis approach with improved simulation efficiency For the hierarchical synthesis of analog cells we developed the sub-circuit optimizers such as current mirror and differential input stage. Each sub-circuit optimizer can be used for synthesis of analog cells such as OTA(operational transconductance amplifier), 2-stage OP-AMP and comparator. To reduce the time spending of the simulation-based synthesis we propose 2-stage searching scheme and simulation data reusing scheme. With those schemes the synthesis time spending of OTA was reduced from 301.05sec to 56.52sec by 81.12%. Since our synthesis system doesn't need other additional physical parameters except SPICE parameters, and is independent of the process and its model level, the time spending to port to other process is minimized. We synthesized OTA and 2-stage OP-AMP respectively with our approach to show its usefulness.

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Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A

  • Jeon, Yong-Woo;Hur, In-Seok;Kim, Yong-Sik;Bae, Min-Kyung;Jung, Hyun-Kwang;Kong, Dong-Sik;Kim, Woo-Joon;Kim, Jae-Hyeong;Jang, Jae-Man;Kim, Dong-Myong;Kim, Dae-Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.3
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    • pp.153-161
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    • 2011
  • In this work, we report the physics-based SPICE model of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and demonstrate the SPICE simulation of amorphous InGaZnO (a-IGZO) TFT inverter by using Verilog-A. As key physical parameter, subgap density-of-states (DOS) is extracted and used for calculating the electric potential, carrier density, and mobility along the depth direction of active thin-film. It is confirmed that the proposed DOS-based SPICE model can successfully reproduce the voltage transfer characteristic of a-IGZO inverter as well as the measured I-V characteristics of a-IGZO TFTs within the average error of 6% at $V_{DD}$=20 V.

A SPICE-based 3-dimensional circuit model for Light-Emitting Diode (SPICE 기반의 발광 다이오드 3차원 회로 모델)

  • Eom, Hae-Yong;Yu, Soon-Jae;Seo, Jong-Wook
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.2
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    • pp.7-12
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    • 2007
  • A SPICE-based 3-dimensional circuit model of LED(Light-Emitting Diode) was developed for the design optimization and analysis of high-brightness LEDs. An LED is represented as an array of pixel LEDs with small preassigned areas, and each of the pixel LEDs is composed of circuit networks representing the thin-film layers(n-metal, n- and p-type semiconductor layers, and p-metal), ohmic contacts, and pn-junctions. Each of the thin-film layers and contact resistances is modeled by a resistance network, and the pn-junction is modeled by a conventional pn-junction diode. It has been found that the simulation results using the model and the corresponding parameters precisely fit the measured LED characteristics.

Design of a Silicon Neuron Circuit using a 0.18 ㎛ CMOS Process (0.18 ㎛ CMOS 공정을 이용한 실리콘 뉴런 회로 설계)

  • Han, Ye-Ji;Ji, Sung-Hyun;Yang, Hee-Sung;Lee, Soo-Hyun;Song, Han-Jung
    • Journal of the Korean Institute of Intelligent Systems
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    • v.24 no.5
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    • pp.457-461
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    • 2014
  • Using $0.18{\mu}m$ CMOS process silicon neuron circuit of the pulse type for modeling biological neurons, were designed in the semiconductor integrated circuit. Neuron circuiSt providing is formed by MOS switch for initializing the input terminal of the capacitor to the input current signal, a pulse signal and an amplifier stage for generating an output voltage signal. Synapse circuit that can convert the current signal output of the input voltage signal, using a bump circuit consisting of NMOS transistors and PMOS few. Configure a chain of neurons for verification of the neuron model that provides synaptic neurons and two are connected in series, were performed SPICE simulation. Result of simulation, it was confirmed the normal operation of the synaptic transmission characteristics of the signal generation of nerve cells.

A Study on the RF and Microwave Circuit Analysis in the SPICE (SPICE에서의 RF와 Microwave회로 해석에 관한 연구)

  • 김학선;이창석;이형재
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.7 no.1
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    • pp.83-91
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    • 1996
  • The SPICE circuit analysis program has a limited math capability and, in general, cannot be used for RF and microwave simulation because a complex arithmetic is required to compute S-parameters from node voltages. This paper presents two test bench models that can be used to obtain node voltages proportional to incident, reflected, and transmitted signals. From SPICE computed node voltages, S-parameters are computed using the math capability of the PSPICE post processor, PROBE, as an example for a low-pass filter consisting of transmission line sections. The results of this example are compared with another high frequency circuit analysis program, TOUCHSTONE. The difference between the results of these two programs in magnitude was less than 0.003 and in phase was a few tenths of a degree. By using these test benchs to simulate a filter, RF and microwave analysis can be made with the SPICE, which can be a cost-effective and readily available computational tool for educators and practicing engineers.

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Modeling of Poly-Si TFT and Circuit Simulation for the Analysis of TFT-LCD Characteristics (TFT-LCD 특성 분석을 위한 poly-Si TFT 소자 모델링 및 회로 시뮬레이션)

  • Son, Myung-Sik;Ryu, Jai-Il;Shim, Seong-Yung;Jang, Jin;Yoo, Keon-Ho
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.314-317
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    • 2000
  • In order to analyze the characteristics of complicated TFT-LCD (Thin Film Transistor-Liquid Crystal Display) circuits, it is indispensible to use simulation programs. In this study, we present a systematic method of extracting the input parameters of poly-Si TFT for Spice simulation. This method is applied to two different types of poly-Si TFTs fabricated in our group with good results. Among the Spice simulators, Pspice has the graphic user interface feature making the composition of complicated circuits easier. We added successfully a poly-Si TFT model on the Pspice simulator, which would contribute to efficient simulations of poly-Si TFT-LCD pixels and arrays.

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A study on Mode ling of the Power LIGBT (POWER LIGBT의 모델링에 관한 연구)

  • Lim, K.M.;Jeong, S.J.;Lee, H.S.;Cho, H.Y.;Kim, Y.S.;Sung, M.Y.
    • Proceedings of the KIEE Conference
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    • 1991.11a
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    • pp.249-252
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    • 1991
  • I-V characteristics of LIGBT is studied by SPICE simulation which includes device parameters and process parameters. Analysis and modeling of ON-resistance are discussed in this paper. Compare with experimental values, SPICE simulation and modeling results show that our simulation is valid for LIGBT.

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Switch Level Logic Simulator Using Polynomial MOS Delay Model (다형식 MOS 지연시간 모델을 이용한 스윗치레벨 논리 시뮬레이터)

  • Jun, Young-Hyun;Jun, Ki;Park, Song-Bai
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.6
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    • pp.700-709
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    • 1988
  • A new technique is proposed for switch-level logic simulation for NMOS and CMOS logic circuits. For the simple inverter the rise or fall delay time is approximated by a product of polynomials of the input waveform slope, the output loading capacitance and the device configuration ratio, the polynomial coefficients being so determined as to best fit the SPICE simuladtion results for a given fabrication process. This approach can easily and accurately be extened to the case of multiple input transitions. The simulation results show that proposed method can predict the delay times within 5% error and with a speed up by a factor of three orders of magnitude for several circuits tested, as compared with the SPICE simulation.

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Charge/Discharge Characteristics Analysis of Li-Polymer battery (리튬 폴리머 전지의 충방전 특성해석)

  • 최해룡;강병희;목형수;최규하;신우석
    • Proceedings of the KIPE Conference
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    • 1999.07a
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    • pp.222-225
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    • 1999
  • Started upon it discovery by Wright et al in 1973, studies on the solid polymer electrolyte are being carried out vigorously. So, models of Li-polymer battery have been developed through R-L-C components combination and P-spice functional block in this paper. The impedance characteristics of Li-polymer battery with R-L-C components are presented. Simulation results using P-spice functional model are compared with measured charge/discharge characteristics.

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Characteristic Analysis of LDO Regulator According to Process Variation (공정변화에 따른 LDO 레귤레이터의 특성 분석)

  • Park, Won-Kyeong;Kim, Ji-Man;Heo, Yun-Seok;Park, Yong-Su;Song, Han-Jung
    • 전자공학회논문지 IE
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    • v.48 no.4
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    • pp.13-18
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    • 2011
  • In this paper, we have examined electrical characteristics of LDO regulator according to the process variation using a 1 ${\mu}m$ 20 V high voltage CMOS process. The electrical analysis of LDO regulator have been performed with three kind of SPICE parameter sets (Typ : typical, FF : fast, SS : slow) by process variation which cause change of SPICE parameter such as threshold voltage and effective channel length of MOS devices. From simulation results, we confirmed that in case of SS type SPICE parameter set, the LDO regulator has 3.6 mV/V line regulation, 0.4 mV/mA load regulation and 0.86 ${\mu}s$ output voltage settling time. And in case of Typ type SPICE parameter set, the LDO regulatorhas 4.2 mV/V line regulation, 0.44 mV/mA load regulation and 0.62 ${\mu}s$ output voltage settling time. Finally, in the FF type SPICE parameter set, the LDO regulator has 7.0 mV/V line regulation, 0.56 mV/mA load regulation and 0.27 ${\mu}s$ output voltage settling time.