• Journal of Sensor Science and Technology
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• v.5 no.6
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• pp.7-14
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• 1996

In order to develop gas sensor operating at low temperature, thick film $Co_{3}O_{4}$ sensor was fabricated. $Co_{3}O_{4}$ powder was prepared by precipitation from cobalt nitrate solution and the powders containing ethylene glycol as a binder was screen-printed on alumina substrate. Characteristics of sensitivity, response time, and recovery were investigated in terms of binder content and heat treating conditions. The $Co_{3}O_{4}$ sensor contained 15% ethylene glycol and heat-treated at $300^{\circ}C$ for 24hr showed the highest sensitivity at the operating temperature of $250^{\circ}C$. Its sensitivity of 1.1 to 5000ppm butane gas was very high, as compared with $0.8{\sim}0.85$ at the operating temperature of $350{\sim}400^{\circ}C$ for a commercial $SnO_{2}$ gas sensor. It is found that response time was fast, but recovery was poor for the sensor.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.37-45
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• 2008

In this study, reliabilities of Cu (60 um)/SnAg (20 um) double-bump flip chip assemblies were investigated for the flip chip interconnections on organic substrates with 100 um pitch. After multiple reflows at $250^{\circ}C\;and\;280^{\circ}C$, bump contact resistances were almost same regardless of number of reflows and reflow temperature. In the high temperature storage test, there was no bump contact resistance change at $125^{\circ}C$ up to 2000 hours. However, bump contact resistances slightly increased at $150^{\circ}C$ due to Kirkendall voids formation. In the electromigration test, Cu/SnAg double-bump flip chip assemblies showed no electromigration until about 600 hours due to reduced local current density. Finally, in the thermal cycling test, thermal cycling failure mainly occurred at Si chip/Cu column interface which was found out the highest stress concentration site in the finite element analysis. As a result, Al pad was displaced out under thermal cycling. This failure mode was caused by normal compressive strain acting Cu column bumps along perpendicular direction of a Si chip.

• Restorative Dentistry and Endodontics
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• v.22 no.1
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• pp.1-33
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• 1997

The objective of this study was to analyze the in vitro and in vivo corrosion products of low and high copper amalgams. The four different types of amalgam alloy used in this study were Fine cut, Caulk spherical, Dispersalloy, and Tytin. After each amalgam alloy and Hg were triturated according to the directions of the manufacturer by means of the mechanical amalgamator(Amalgam mixer. Shinhung Co. Korea), the triturated mass was inserted into a cylindrical metal mold which was 12mm in diameter and 10mm in height. The mass was condensed by 150Kg/cm compressive force. The specimen was removed from the mold and aged at room temperature for about seven days. The standard surface preparation was routinely carried out by emery paper polishing under running water. In vitro amalgam specimens were potentiostatically polarized ten times in a normal saline solution at $37^{\circ}C$(potentiostat : HA-301. Hukuto Denko Corp. Japan). Each specimen was subjected to anodic polarization scan within the potential range -1700mV to+400mV(SCE). After corrosion tests, anodic polarization curves and corrosion potentials were obtained. The amount of component elements dissolved from amalgams into solution was measured three times by ICP AES(Inductive Coupled Plasma Atomic Emission Spectrometry: Plasma 40. Perkim Elmer Co. U.S.A.). The four different types of amalgam were filled in occlusal and buccal class I cavities of four human 3rd molars. After about five years the restorations were carefully removed after tooth extraction to preserve the structural details including the deteriorated margins. The occlusal surface, amalgam-tooth interface and the fractured surface of in vivo amalgam corrosion products were analyzed. In vivo and in vitro amalgam specimens were examined and analyzed metallographically by SEM(Scanning Electron Microscope: JSM 840. Jeol Co. Japan) and EDAX(Energy Dispersive Micro X-ray Analyser: JSM 840. Jeol Co. Japan). 1. The following results are obtained from in vitro corrosion tests. 1) Corrosion potentials of all amalgams became more noble after ten times passing through the in vitro corrosion test compared to first time. 2) After times through the test, released Cu concentration in saline solution was almost equal but highest in Fine cut. Ag and Hg ion concentration was highest in Caulk spherical and Sn was highest in Dispersalloy. 3) Analyses of surface corrosion products in vitro reveal the following results. a)The corroded surface of Caulk spherical has Na-Sn-Cl containing clusters of $5{\mu}m$ needle-like crystals and oval shapes of Sn-Cl phase, polyhedral Sn oxide phase. b)In Fine cut, there appeared to be a large Sn containing phase, surrounded by many Cu-Sn phases of $1{\mu}m$ granular shapes. c)Dispersalloy was covered by a thick reticular layer which contained Zn-Cl phase. d)In Tytin, a very thin, corroded layer had formed with irregularly growing Sn-Cl phases that looked like a stack of plates. 2. The following results are obtained by an analysis of in vivo amalgam corrosion products. 1) Occlusal surfaces of all amalgams were covered by thick amorphous layers containing Ca-P elements which were abraded by occlusal force. 2) In tooth-amalgam interface, Ca-P containing products were examined in all amalgams but were most clearly seen in low copper amalgams. 3) Sn oxide appeared as a polyhedral shape in internal space in Caulk spherical and Fine cut. 4) Apical pyramidal shaped Sn oxide and curved plate-like Sn-Cl phases resulted in Dispersalloy. 5) In Tytin, Sn oxide and Sn hydroxide were not seen but polyhedral Ag-Hg phase crystal appeared in internal space which assumed a ${\beta}_l$ phase.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.209-209
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• 2003

The adventages of Li alloys have attracted the attention of many research groups, many of which have investigated tin-based alloys [1-2], Despite interesting performances of these, the irreversible capacity loss systematically observed on the first cycle for these compounds is a main drawback for their use as anode materials in lithium ion cells. Not only Sn is efficient in forming alloys with Li, Si can also react with Li to form alloys with a high Li/Si ratio, like Li$\_$22/Si$\_$5/ at 400$^{\circ}C$. It corresponds to a capacity of 4200mAh/g. Electrochemical Li-Si reaction occurs between 0 and 0.3 V against Li/Li$\^$+/, so that high-energy density battery can be realized. Despite the high theoretical capacity of elements like Si, however, particles of the alloys crack and fragment due to the repeated alloying and do-alloying which occurs as cell are charged and discharged. The research groups of Muggins [3] and Besenhard [4] have proposed that the volume expansion due to the insertion of Li can be reduced in micro- and submicro-structured matrix alloys. For this reason, the research group of J.R. Dahn investigated Sn/Mo sequential sputter deposition to prepare nanocomposites [5]. In this study, we investigated the characterization and the electrochemical characteristics of sequentially sputtered Si/Mo multilayer for microbattery anode.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.93-93
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• 2011

The Indium Zinc Tin Oxide (IZTO) and Indium Tin Oxide (ITO) thin films are grown on PI substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt.%, ZnO 15 wt.%, SnO2 15 wt.%) and ITO (In2O3 90wt.%, SnO2 10wt.%). The structural, electrical, and optical properties are investigated. The IZTO thin films deposited at low temperature showed relatively low electrical resistivity compared to ITO thin films deposited at low temperature. As a result, we could prepare the IZTO thin films with the resistivity as low as $5.6{\times}10^{-4}({\Omega}{\cdot}m)$. Both of the films deposited on PI substrate showed an average transmittance over 80% in visible range (400.800nm). Overall, IZTO thin film is a promising candidate as an alternative TCO material to ITO in flexible and OLED devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.33.1-33.1
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• 2009

Lead-free (1-x)$(Na_{0.5}K_{0.5})NbO_3$-xBa($Ti_{0.9}Sn_{0.1})O_3$ [NKN-BTS-100x] ceramics doped with 1 mol% $MnO_2$ have been prepared by the conventional solid state method and their structural and piezoelectric properties were investigated. The NKN-BTS-100x ceramics exhibited a dense and homogeneous microstructure when they were sintered at $1030-1150^{\circ}C$. Grain growth was observed for the specimen sintered at relatively low temperature of $1050^{\circ}C$. A tetragonal/orthorhombic morphotropic phase boundary (MPB) in the perovskite structure was also appeared for the NKN-BTS-100x ceramics (0.04$1050^{\circ}C$. The enhanced piezoelectric properties in the NKN-BTS ceramics with a MPB composition were obtained. Especially, for the NKN-BTS-6 ceramics, a high dielectric constant (${\varepsilon}^T_3/\varepsilon_0=1,400$), piezoelectric constant ($d_{33}=237$) and electromechanical coupling factor ($k_p=0.42$) were obtained.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.4
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• pp.235-241
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• 2005

Thermal creep properties of the advanced zirconium fuel claddings named by HANA alloys which were developed for high burn-up application were evaluated. The creep test of HANA cladding tubes was carried out by the internal pressurization method in temperature range from 350 to $400^{\circ}C$ and in the hoop stress range from 100 to 150 MPa. Creep tests were lasted up to 800 days, which showed the steady-state secondary creep rate. The creep resistance of HANA fuel claddings was affected by final annealing temperature and various factors, such as alloying element, applied stress and testing temperature. From the results the microstructure observation of the samples before and after creep test by using TEM, the dislocation density was increased in the sample of after creep test. The Sn as an alloying element was more effective in the creep resistance than other elements such as Nb, Fe, Cr and Cu due to solute hardening effect of Sn. In case of HANA fuel claddings, the improved creep resistance was obtained by the control of final heat treatment temperature as well as alloying element.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1794-1798
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• 2018

We have grown famatinite $Cu_3SbS_4$ films by using sulfurization of Cu/Sb stack film. Sulfurization at $500^{\circ}C$ produced famatinite $Cu_3SbS_4$ phase, while $400^{\circ}C$ and $450^{\circ}C$ sulfurization exhibited unreacted and mixed phases. The fabricated $Cu_3SbS_4$ film showed S-deficiency, and secondary phase of $Cu_{12}Sb_4S_{13}$. The secondary phase was confirmed by X-ray diffraction, Raman spectroscopy, photoluminescence and external quantum efficiency measurements. We have also fabricated solar cell in substrate type structure, ITO/ZnO/(Zn,Sn)O/$Cu_3SbS_4$/Mo/glass, where $Cu_3SbS_4$ was used as a absorber layer and (Zn,Sn)O was employed as a Cd-free buffer. Our best cell showed power conversion efficiency of 0.198%. Characterization results of $Cu_3SbS_4$ absorber indicates deep defect (due to S-deficiency) and low shunt resistance (due to $Cu_{12}Sb_4S_{13}$ phase). Thus in order to improve the cell efficiency, it is required to grow high quality $Cu_3SbS_4$ film with no S-deficiency and no secondary phase.

• Journal of Sensor Science and Technology
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• v.31 no.6
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• pp.371-375
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• 2022

Antimony-doped tin oxide (ATO) thin films, one type of transparent conductive oxide (TCO) films, were prepared on a SiO₂-coated glass substrate with different substrate temperatures by a radio-frequency magnetron sputtering system. Structural, optical, and electrical characteristics of the deposited ATO films were analyzed using X-ray diffraction, scanning electron microscopy, alpha-step, ultraviolet-visible spectrometer, and Hall effect measurement. The substrate temperature during deposition did not affect the basic crystal structure of the films but changed the grain size and film thickness. The optical transmittance of the ATO films deposited at different substrate temperatures was over 70%. The lowest sheet resistance and resistivity were 8.43 × 10² Ω/sq, and 0.3991 × 10^-2 Ω·cm, respectively, and the highest carrier concentration and mobility were 2.36 × 10²¹ cm^-3 and 6.627 × 10^-2 cm²V^-1s^-1, respectively, at a substrate temperature of 400 ℃.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.422-429
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• 2000

To investigate the effect of annealing temperature and time on the recrystallization behavior and microstructure of Zr-based alloys, the specimens of Zr-0.8Sn-0.4Nb-0.4Fe-0.2Cu, Zr-1Nb, Zircaloy-4, and unalloyed Zr were cold-worked and annealed at 400, 500, 600, 700, 800, $900^{\circ}C$ for 30 to 5000 minutes. The hardness, microstructure and precipitate of the specimens were investigated by using micro-hardness tester, optical microscope and transmission electron microscope, respectively. The recrystallization of Zr-based alloys occurred between $400^{\circ}C$ and $600^{\circ}C$. As the content of alloying elements increased, the hardness and recrystallization temperature of the alloys increased though the grain sizes after recrystallization decreased. It was supposed that the hardness of Zr-based alloy with Fe or Cu increased during recovery by the formation of Fe or Cu precipitates.