• Journal of fish pathology
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• v.22 no.3
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• pp.375-382
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• 2009

Integration and expression of a target gene into chromosomal genomes of host cell by retrovirus mediated gene transfer system usually require complicate and laborious procedures. In the present study, we investigate a simple method to integrate a target gene into genome of BF-2 cells using ultraviolet (UV)-inactivated snakehead retrovirus (SnRV), a fish retrovirus. First of all, an optimization of transfection condition was determined with BF-2 cells using Lipofectamine 2000 and Transome. Using 0.5 $\mu\ell$ Lipofectamine 2000 resulted in 33.8, 40.6 and 40.2% of transfection efficacy with high survival rate (minimum 80%) in 0.5, 1 and 2 $\mu{g}$ DNA, respectively, and those of Transome were all less than 5%. It was confirmed that UV-treatment for 5 min was enough to inactivate infectivity of SnRV. Next, a cassette composed of GFP (green fluorescent protein) gene flanked by LTR (long terminal repeats) sequences derived from SnRV was constructed and transfected into BF-2 cells followed by treatment with UV-inactivated SnRV for optimization of integration and expression of the cassette gene. As the results, the fluorescence was expressed in BF-2 cells treated with UV-inactivated SnRV 3 and 5 times, while there was no expression in BF-2 cells with once and non treatment. Accordingly, it was confirmed that GFP gene was integrated into chromosomal genome of BF-2 cells with UV-inactivated SnRV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.658-662
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• 2000

The microstructure, adhesion strength and conductivity of electroplated Sn-Cu Films on Alloy42 lead Frame were measured for comparison. In the case of electroplated 90Sn10Cu, 99Sn1Cu, Cu$\sub$10/Sn$_3$Phase was formed and Ni$_3$Sn$_2$Phase was formed after 200$^{\circ}C$, 30min annealing. In the case of electroplated 99Sn1Cu, Cu$\sub$10/Sn, Ni$_3$Sn phases were formed and Ni$_3$Sn$_4$, Ni$_3$Sn$_4$phases were formed after 200$^{\circ}C$, 30min annealing. 90Sn10Cu film was measured better uniformity, adhesion strength and conductivity than 99Sn1Cu.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.74.2-74.2
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.155.2-155
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• 2000

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1315-1322
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• 1988

$SnO_X$/Pt thin film gas sensors were fabricated and their performance characteristics were measured. The $SnO_X$/Pt films were deposited by vacuum evaporating the $SnO_2$ target mixed with 2 wt% Pt. The conductivity showed the temperature dependence and the sensitivity to CO gas was proportional to the square root of gas concentration below 2000 ppm. The optimum operating temperature of the fabricated devices was about 300$^{\circ}$C and the response time in 5000 ppm CO gas was about 20 sec.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1135-1139
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• 2000

본 연구에서는 Pt/Sn $O_2$박막의 CO 감지특성을 향상시키기 위하여 표면 형상을 제어하였다. Pt/Sn $O_2$계 박막센서의 최적 동작온도는 175$^{\circ}C$이었다. Pt가 12초 동안 증착된 Sn $O_2$가 200ppm의 CO 가스에 대하여 1.23의 최대감도를 나타내었고, 그 이상의 Pt 증착시간 증가에 따라 Sn $O_2$위의 Pt의 coverage가 증가하여 센서의 감도를 감소시켰다. 다층박막(multi-layer thin film)의 단층의 Pt/Sn $O_2$복합체 위에 다시 Sn $O_2$및 Pt의 cluster 층들을 연속적으로 증착함으로서 제작되었다. 단지 하나의 Pt 층만을 증착한 Sn $O_2$막보다 다층의 Pt/Sn $O_2$막이 더욱 우수한 감도( $R_{air}$/ $R_{co}$=1.72, CO: 200 ppm)를 나타내었다. Pt/Sn $O_2$다층박막의 우수한 감도의 원인은 Pt와 Sn $O_2$사이의 계면적 증대 때문인 것으로 생각되어 진다.다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.141-141
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• 2000

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.37-44
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• 1995

A coprecipitation method was used for preparing Ca and Pt doped $SnO_{2}$-based material. Crystallite size and specific surface area were investigated by TEM, XRD and BET analysis. $SnO_{2}(Ca)/Pt$ based thick film devices were prepared by a screen printing technique for hydrocarbon gas detecting. Then the electrical and sensing characteristics of devices were investigated. As Ca and Pt addition, the crystal growth of $SnO_{2}$ was suppressed during calcining and sintering, and the sensitivity of $SnO_{2}(Ca)/Pt$ thick film to gas was enhanced. Also any difference in the sensing properties has to be attributed to the Pt and Au electrode. For the 2000 ppm $CH_{4}$, the sensitivity of $SnO_{2}(Ca)/Pt$ thick film devices were about 83% at an operating temperature of $400^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.19-24
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• 2000

To make stacked chip packages far high-density packaging of memory chips used in workstations or PC severs, several lead-frames are to be connected vertically. Fer this purpose. Sn or Sn/Ag were electrochemically deposited on Cu lead-frames and their microstructures were examined by XRD and SEM. Then, two specimens were annealed at $250^{\circ}C$ for 10 min. and pressed to be joined. The shear stresses of joined lead-frames were measured fur comparison. In the case of Sn only, $Cu_3Sn$ was formed by the reaction of Sn and Cu lead-frames. In the case of Sn/Ag, besides $Cu_3Sn$. $Ag_3Sn$ was formed by the reaction of Sn and Ag. Compared to joined specimens made from Sn only, those made from Sn/Ag showed 1.2 times higher shear stress. This was attributed to the $Ag_3Sn$ phase formed at the joined interface.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.38-43
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• 1996

A coprecipitation method was used for preparing Ca and Pt doped $SnO_2$ fine powder. Components of the powder were investigated by XPS and SIMS. Crystallite size and specific surface area were investigated by TEM, XRD, and BET analysis. $SnO_2$(Ca)/Pt based thick film devices were prepared by a screen printing technique for methane gas detection. Then sensing characteristics of the devices were investigated. As Ca and Pt added, the crystal growth of $SnO_2$ was suppressed during calcining and sintering, and the sensitivity of $SnO_2$(Ca)/Pt thick film to methane gas was enhanced. For the Pt doped $SnO_2$ fine particle, the thick film device shows sensitivity of about 83% to 2000 ppm methane gas at an operating temperature of >$400^{\circ}C$.