• Journal of Powder Materials
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• v.24 no.5
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• pp.400-405
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• 2017

The addition of a large amount of alloying elements reduces the compactibility and increases the compacting pressure, thereby shortening the life of the compacting die and increasing the process cost of commercial PM steel. In this study, the characteristic changes of Fe-Mo-P, Fe-Mn-P, and Fe-Mo-Mn-P alloys are investigated according to the Si contents to replace the expensive elements, such as Ni. All compacts with different Si contents are fabricated with the same green densities of 7.0 and $7.2g/cm^3$. The transverse rupture strength (TRS) and sintered density are measured using the specimens obtained through the sintering process. The sintered density tends to decrease, whereas the TRS increases as the Si content increases. The TRS of the sintered specimen compacted with $7.2g/cm^3$ is twice as high as that compacted with $7.0g/cm^3$.

• Journal of Power System Engineering
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• v.20 no.5
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• pp.20-28
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• 2016

This study has developed an organic/inorganic hybrid solution by addition of $SiO_2$ polysilicate and Melamine to the urethane. The three types of cold rolled steel were evaluated a corrosion resistance properties by using these solutions. The urethane solution(U) and the urethane solution with $SiO_2$ polysilicate($US_7$) were generate a lot of corrosion. The urethane solution with $SiO_2$ polysilicate and melamine($US_7M_3$) was excellent in corrosion resistance, regardless of the steel type. In addition, corrosion resistance has been shown to depend on the tensile strength. The appearance of coating by U and $US_7$ solution is bumpy surface, and were a lot of fine defects. $US_7M_3$ solution is made a sophisticated molecular cross-linking structure inside the coating, it was a slick surface. Other characteristics are exhibited the excellent property for all solutions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.487-493
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• 1997

Ti/sic(4H) Schottky barrier diodes were fabricated. The donor concentration and the built-in potential obtained by capacitance-voltage(C-V) measurement was about $2.0{\times}10^{15}{\textrm}{cm}^{-3}$ and 0.65 V, respectively. The ideality factor of 1.07 was obtained from the slope of current-voltage(I-V) characteristics at low current density. The breakdown field under the reverse bias voltage was about $1.7{\times}10^3V/{\textrm}{cm}$ and was very high. The barrier height of Ti for SiC(4H) was 0.91 V, which was determined by the analysis of the saturation current-temperature and the C-V characteristics.

• Asian Pacific Journal of Cancer Prevention
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• v.15 no.3
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• pp.1403-1410
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• 2014

Epigenetic regulators like histone deacetylases (1 and 2), and viral onco-proteins (E6/E7) are known to be overexpressed in cervical cancer cells. The present study was designed to investigate the effect of curcumin on HDACs (1 and 2) and HPV E6/E7 in the cervical cancer cell line SiHa and a drug resistant clone $SiHa^R$ (derived from SiHa). It was further intended to investigate whether curcumin could sensitize the cells towards cisplatin induced cell killing by modulation of multi drug resistant proteins like MRP1 and Pgp1. Curcumin inhibited HDACs, HPV expression and differentially increased acetylation and up-regulation of p53 in SiHa and $SiHa^R$, leading to cell cycle arrest at G1-S phase. Up-regulation of pRb, p21, p27 and corresponding inhibition of cyclin D1 and CDK4 were observed. Cisplatin resistance in $SiHa^R$ due to over-expression of MRP1 and Pgp1 was overcome by curcumin. Curcumin also sensitized both the cervical cancer cells towards cisplatin induced cell killing. Inhibition of HDACs and HPVs led to cell cycle arrest at G1/S phase by alteration of cell cycle regulatory proteins. Suppression of MRP1 and Pgp1 by curcumin resulted in sensitization of cervical cancer cells, lowering the chemotherapeutic dose of the drug cisplatin.

• Journal of Korea Foundry Society
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• v.38 no.1
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• pp.1-8
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• 2018

In this study, we focused on the correlation between the solidification structure, heat treatment and mechanical properties of the A356 alloy according to the conditions of Sr modification. The microstructural evolution of the eutectic Si and ${\alpha}-Al$ phase in the A356 alloy castings depending on the amount of Sr were investigated during solid solution heat treatment using an optical microscope, a scanning electron microscope and an image analyzer. In addition, tensile tests on the heat treated materials examined the relationship between the microstructure and the fracture surface. The as-cast A356 alloys under 40 ppm Sr showed an undermodified microstructure, but that of the added 60-80 ppm Sr had well modified structure of fine fibrous silicon. After solid solution treatment, the microstructure of the undermodified A356 alloy exhibited a partially spheroidized morphology, but the remainder showed the fragmentation of fibrous shaped silicon. The spheroidization of the eutectic silicon in the modified A356 alloys was completed during heat treatment, which was very effective in increasing the elongation. This is supported by the fracture surface in the tensile test.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.7
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• pp.1132-1137
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• 2003

This study dealt with the suppression of interfacial reaction between Nb and MoSi$_2$ for the fabrication of high toughness Nb/MoSi$_2$ laminate composites, based on the results of a thermodynamical estimation. Especially, the effect of ZrO$_2$ particle on the interfacial reaction of Nb/MoSi$_2$ bonding materials has been examined. Nb/MoSi$_2$ bonding materials have been successfully fabricated by alternatively stacking matrix mixtures and Nb sheets and hot pressing in the graphite mould. The addition of ZrO$_2$ particle to MoSi$_2$ matrix is obviously effective for promoting both the interfacial reaction suppression and the sintered density of Nb/MoSi$_2$ bonding materials, since it is caused by the formation of ZrSiO$_4$ in the MoSi$_2$-ZrO$_2$ matrix mixture. The interfacial shear strength of Nb/MoSi$_2$ bonding materials also decreases with the reduction of interfacial reaction layer associated with the content of ZrO$_2$ particle and the fabrication temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.79-80
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-base fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC poly types, 4H-SiC is the most attractive poly type due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, $0.01{\sim}0.025\;{\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50%. The height of the fabricated oxide pattern ($1{\sim}3\;nm$) on SiC is similar to that of typically obtained on Si ($10^{15}{\sim}10^{17}\;cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. Whereas the simulated electric field on Si surface is constant ($5\;{\times}\;10^7\;V/m$), the electric field on SiC surface increases with increasing the doping concentration from ${\sim}10^{15}$ to ${\sim}10^{17}\;cm^{-3}$. We demonstrated that a specific electric field ($4\;{\times}\;10^7\;V/m$) and a doping concentration (${\sim}10^{17}\;cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• Korean Journal of Crystallography
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• v.1 no.1
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• pp.19-28
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• 1990

6H-SiC is a promising material (Eg=3.0eV) for blue light-emitting doide and high-temperature semiconducting device. In the experiment, single crystals of a-SiC have been grown by the sublimation method to fabricate blue light~emitting diode. During the growth of a-SiC single crystals, a temperature Vadient, yonh temperature and pressure ranges were kept 44℃/cm , 1800-1990℃ and 50-1000 mTorr, respectively. Single crystals obtained in Acheson furnace were used as seed crystals. Polarizing microscopy and back-reflection X-ray Laue diffraction showed that the a-SiC crystal was epitaxially and on the seed crytal. It was found by XRD analysis that when other growth conditions were the same, a-SiC was grown at the temperature above 1840℃ and 3C-SiC was gown at lower temperature or under low supersaturation of vapor. The carrier type. concentration and mobility were measured be hole(p-type), 7.6x1014cm-3 and 19cm2V-1sec-1, respectively, by van der Pauw method.

• Journal of the Korean Ceramic Society
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• v.44 no.7
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• pp.381-386
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• 2007

A porous reaction bonded silicon carbide (RBSC) was fabricated by a molten Si infiltration method. The porosity and flexural strength of porous RBSC fabricated in this study were dependent upon the amount of carbon source used in the SiC/carbon preform as well as the amount of Si infiltrated into the SiC/carbon preform. The porosity and flexural strength of porous RBSC were in the range of $20 vo1.{\sim}49 vo1.%$ and $38{\sim}61 MPa$, respectively. With increase of carbon contents and molten Si for infiltration, volume fraction of the pores was gradually decreased, and flexural strength was increased. The porous RBSCs fabricated with the same amount of molten Si show less residual Si around neck with increase of carbon source, as well as a new SiC was formed around neck which resulted in the decreased porosity and improvement of the flexural strength. In addition, decrease of the porosity and increase of the flexural strength were also obtained by increase of the amount of molten Si with the same amount of carbon source. However, it was found that the flexural strength of porous RBSC depends on the porosity rather than the amount of the newly formed SiC in neck phase between SiC particles used as a starting material.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.