• Korean Journal of Materials Research
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• v.26 no.4
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• pp.212-215
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• 2016

In this paper, cerium doped lutetium pyrosilicate (LPS) powders with cerium content (0.05 and 0.07 mol%) were prepared by sol-gel process. The formation of lutetium pyrosilicate (LPS) phase was confirmed by XRD analysis for the powders heated at $1,200^{\circ}C$; in these powders, a single phase of $Lu_2Si_2O_7$ (LPS) was observed. Cerium doped lutetium pyrosilicate (LPS) powder was agglomerated and constituted of small spherical particles with diameters of about 300 nm. The photoluminescence spectra of the $Lu_2Si_2O_7:Ce^{3+}$ powders showed the characteristic of excitation and there was an emission spectrum for $Ce^{3+}$ in the host of $Lu_2Si_2O_7$. The emission spectrum shows a broad band in the range of 350-525 nm; the broad wavelength on the right side of the spectra should be ascribed to the same 5d-4f transitions of $Ce^{3+}$, as in the case of cerium doped $Lu_2Si_2O_7$ single crystals.

• Journal of the Korean Ceramic Society
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• v.44 no.11
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• pp.645-649
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• 2007

The $La_{0.7}Sr_{0.3}MnO_3$ was deposited on $SiO_2/Si$ substrate by RF magnetron sputtering. The oxygen gas flow rate was changed from 0 to 80 sccm and the substrate temperature was $350^{\circ}C$. The oxygen gas flow rate was changed to control the growth orientation and crystalline state of the film. Relatively high TCR (temperature coefficient of resistance) value (-2.33%/K) was obtained when comparing with the reported values of the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were observed when grain size of the film increased with the increase of oxygen gas flow rate.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.355-357
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• 1995

Pt(80nm)/$SiO_2$(150nm)/Si 기판위에 $Ba_{0.7}Sr_{0.3}TiO_3$ 박막을 rf-magnetron Sputtering 방법을 이용하여 기판온도 590$^{\circ}C$에서 33nm 두께를 증착했을 때 비유전율은 268 이었다. 비유전율이 3.9인 $SiO_2$와 비교했을 때 유효 두께인 Tox는 0.45nm 이었다. 누설 전류 밀도는 1.5V 전압을 인가했을 때 $4.21\times10^{-7}A/cm^2$이었다.

• Proceedings of the Microbiological Society of Korea Conference
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• 2008.05a
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• pp.62-64
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• 2008

A major hurdle to the development of RNA interference as therapy for HIV infection is the delivery of siRNA to T lymphocytes which are difficult cells to transfect even in vitro. We have employed a single chain antibody to the pan T cell surface antigen CD7 was conjugated to an oligo-9-arginine peptide (scFvCD7-9R) for T cell-specific siRNA delivery in NOD/SCIDIL2${\gamma}$-/- mice reconstituted with human peripheral blood lymphocytes (Hu-PBL). Using a novel delivery, we first show that scFvCD7-9R efficiently delivered CD4 siRNA into human T cells in vitro. In vivo administration to Hu-PBL mice resulted in reduced levels of surface CD4 expression on T cells. Mice infected with HIV-1 and treated on a weekly basis with scFvCD7-9R-siRNA complexes targeting a combination of viral genes and the host coreceptor molecule CCR5 successfully maintained CD4/CD3 T cell ratios up to 4 weeks after infection in contrast to control mice that displayed a marked reduction in CD4 T cell numbers. p24 antigen levels were undetectable in 3 of the 4 protected mice. scFvCD7-9R/antiviral siRNA treatment also helped maintain CD4 T cell numbers with reduced plasma viral loads in Hu-PBL mice reconstituted with PBMC from donors seropositive for HIV, indicating that this method can contain viral replication even in established HIV infections. Our results show that scFvCD7-9R could be further developed as a potential therapeutic for HIV-1 infection.

• Korean Journal of Materials Research
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• v.23 no.7
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• pp.359-365
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• 2013

We investigated the nanostructural, chemical and optical properties of nc-Si:H films according to deposition conditions. Plasma enhanced chemical vapor deposition(PECVD) techniques were used to produce nc-Si:H thin films. The hydrogen dilution ratio in the precursors, [$SiH_4/H_2$], was fixed at 0.03; the substrate temperature was varied from room temperature to $600^{\circ}C$. By raising the substrates temperature up to $400^{\circ}C$, the nanocrystalite size was increased from ~2 to ~7 nm and the Si crystal volume fraction was varied from ~9 to ~45% to reach their maximum values. In high-resolution transmission electron microscopy(HRTEM) images, Si nanocrystallites were observed and the crystallite size appeared to correspond to the crystal size values obtained by X-ray diffraction(XRD) and Raman Spectroscopy. The intensity of high-resolution electron energy loss spectroscopy(EELS) peaks at ~99.9 eV(Si $L_{2,3}$ edge) was sensitively varied depending on the formation of Si nanocrystallites in the films. With increasing substrate temperatures, from room temperature to $600^{\circ}C$, the optical band gap of the nc-Si:H films was decreased from 2.4 to 1.9 eV, and the relative fraction of Si-H bonds in the films was increased from 19.9 to 32.9%. The variation in the nanostructural as well as chemical features of the films with substrate temperature appears to be well related to the results of the differential scanning calorimeter measurements, in which heat-absorption started at a substrate temperature of $180^{\circ}C$ and the maximum peak was observed at ${\sim}370^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.6
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• pp.1158-1165
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• 2004

This paper describes the design of a two stage 1V power supply SiGe Low Noise Amplifier operating at 5.25㎓ for 802.lla wireless LAN application. The achieved performance includes a gain of 17㏈, noise figure of 2.7㏈, reflection coefficient of 15㏈, IIP3 of -5㏈m, and 1-㏈ compression point of -14㏈m. The total power consumption of the circuit was 7㎽ including 0.5㎽ for the bias circuit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.616-621
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• 2009

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.135-136
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• 2008

이 실험에서는 비휘발성 메모리에서의 블로킹 층으로 $SiN_x$ 박막을 사용하였다. ELA (poly-Si) 기판위에 $SiO_xN_y$ 박막을 성장하기 전에 BHF를 이용해 자연 산화막을 제거하였다. 터널 층을 위해 2.7nm두께의 $SiO_xN_y$를 ICP-CVD 장비를 이용해 유리기판위에 증착하였다. 다음으로 $SiH_4/H_2$기체를 이용， ICP-CVD장비를 이용해 전하 저장을 위한 a-Si 박막을 증착하고, 마지막으로 a-Si층 위에 $SiN_x$ 층을 형성하였다. $SiN_x$ 박막을 형성하는데 최적의 조건을 찾기 위해 가스의 구성 비율 및 증착시간을 변화시키고 온도와 RF power도 바꿔주었다. 굴절률이 1.79 고 두께가 30 nm 인 $SiN_x$는 블로킹 층으로 사용하기 위한 것이다. 제작된 NSO-NVM 소자의 전기적 메모리 특성은 on current가 약 $10^{-5}$ A 이고 off current가 약 $5\times10^{-13}$ A로 전류 점멸비$(I_{ON}/I_{OFF})$는 약 $1\times10^7$ 이고 Swing 값은 0.53V/decade 이다. 1ms 동안의 programming/erasing 결과 약 3.5 V의 넓은 메모리 윈도우 크기를 가진다는 것을 확인할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.271-271
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• 2013

The defect states of a Ar-sputtered SiO2 surface on Si (001) were investigated using Auger electron spectroscopy (AES) and reflection electron energy loss spectroscopy (REELS). The REELS spectra at the primary electron energy of 500 eV showedthat three peaks at 2.5, 5.1, and 7.2 eV were found within the band gap after sputtering. These peaks do not appear at the primary electron energies of 1,000 and 1,500 eV, which means that the defect states are located at the extreme surface of a SiO2/Si thin film. According to the calculations, two peaks at 7.2 and 5.1 eV are related to neutral oxygen vacancies. However, the third peak at 2.5 eV has never been previously reported and the theories proposed that this defect state may be due to Si-Si bonding. Our Auger data showed that a peak for Si-Si bonding at 89 eV appears after Ar ion sputtering on the surface of the sample, which is consistent with the theoretical models.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.7
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• pp.1255-1258
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• 2010

In this paper, the $CoSi_2$ thin films with thicknesses of about $5{\mu}m$ were deposited on n-type silicon (111) substrates by RF magnetron sputtering method using a $CoSi_2$ target (99.99%). The flow rate of argon of 50 sccm, substrate temperature of $100^{\circ}C$, RF power of 60 watts, deposition time of 30 minutes, and the vacuum of $1\times10^{-6}$ Torr. The annealing treatments of the $CoSi_2$ thin film were performed from 500, 700 and $900^{\circ}C$ for 1h in air ambient by an electric furnace. In order to investigate the $CoSi_2$ thin film X-ray diffraction patterns were measured using the X-ray diffractometer (XRD). The structure of the thin films were investigated by using scanning the electron microscope (SEM) were used for review. The surface morphology of the thin films was measured with a atomic force microscopy (AFM). Temperature dependence of sheet resistivity and property of Hall effect was measured in the $CoSi_2$ thin film.