• Journal of Korea Foundry Society
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• v.17 no.5
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• pp.458-464
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• 1997

Mg-Cu-Si과 Mg-Cu-Ge계 3원 합금에서 비정질 생성범위와 열적, 기계적 성질을 조사하였다. Mg-Cu-Si계에서는 $15{\sim}45%Cu$, $0{\sim}10%Si$, Mg-Cu-Ge계에서는 $15{\sim}45%Cu$, $0{\sim}5%Ge$의 조성범위에서 각각 비정질 단상이 생성되었고, $15{\sim}22.5%Cu$, 2.5%Si(or Ge)의 조성범위에서 생성되는 비정질상은 180도 밀착굽힘을 하여도 파단되지 않는 양호한 인성을 가지고 있었으며, $Mg_{82.5}Cu_{15}Ge_{2.5}$비정질합금의 최대인장강도는 800 MPa로 결정질 Mg기 합금의 최대치인 300 MPa에 비해 월등히 높은 값을 나타내었다. 그러고 비정질합금의 결정화는 다음과 같은 과정으로 일어났다. 1) Si(or Ge) ${\le}$ 2.5%: 비정질 ${\to}$ 비정질+$Mg_2Cu$+Mg ${\to}$ $Mg_2Cu$+Mg+$Mg_2Si$(or Ge), 2) Si(or Ge)=5%: 비정질 ${\to}$ $Mg_2Cu$+Mg+$Mg_2Si$(or Ge), 3) Si=10%: 비정질 ${\to}$ 비정질+$Mg_2Si$ ${\to}$ $Mg_2Si$+$Mg_2Cu$+Mg.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.738-741
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• 2000

Univorm epitaxial $CoSi_2$layers have been grown in situ on a (100) Si substrate at temperatures near$ 600^{\circ}C$ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, (Co(η(sup)5-C(sub)5H(sub)5) ($CO_2$). The growth kinetics of an epitaxial $CoSi_2$layer on al Si(100) substrate was investigated at temperatures ranging from 575 to $650^{\circ}C$. In initial deposition stage, plate-like discrete $CoSi_2$spikes were nucleated along the <111> directions in (100) Si substrate with a twinned structure. The discrete $CoSi_2$plates with both {111} and (100) planes grew into an epitaxial layer with a flat interface on (100) Si. For epitaxial $CoSi_2$growth on (100) Si, the activation energy of the parabolic growth was found to be 2.82 eV. The growth rate seems to be controlled by the diffusion of Co through the $CoSi_2$layer.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.57-64
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• 2007

New Chip-on-glass technology to attach an Si chip directly on the glass substrate of LCD panel was studied with local heating method of the Si chip by using thin film heater fabricated on the Si chip. Square-shaped Cu thin film heater with the width of $150\;{\mu}m$, thickness of $0.8\;{\mu}m$, and total length of 12.15 mm was sputter-deposited on the $5\;mm{\times}5\;mm$ Si chip. With applying current of 0.9A for 60 sec to the Cu thin film heater, COG bonding of a Si chip to a glass substrate was successfully accomplished with reflowing the Sn-3.5Ag solder bumps on the Si chip.

• Journal of the Optical Society of Korea
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• v.18 no.1
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• pp.45-49
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• 2014

Well-crystallized $BaSi_2O_5:Eu^{2+}$ phosphor films were synthesized by heat treatment of spin-coated BaO:Eu on $SiO_2$ glass. We investigated luminescence-structure properties of these phosphor films as a function of heat-treatment temperature. From x-ray diffraction patterns, our $BaSi_2O_5:Eu^{2+}$ phosphor films revealed that (111)- and (204)-crystal planes of $BaSi_2O_5$ crystal were dominantly increased with an increase of heat-treatment temperature. Photoluminescence intensities of $BaSi_2O_5:Eu^{2+}$ phosphor films were increased with amount of these crystal planes. It can be explained that $Eu^{2+}$ ions were stably occupied at specific crystal orientation of $BaSi_2O_5$ crystal, enhancing the luminescent intensities of $BaSi_2O_5:Eu^{2+}$ phosphor films. In addition, our $BaSi_2O_5:Eu^{2+}$ phosphor films had transmittance of 70% at 510 nm,.due to the dense morphology and specific crystallinity of $BaSi_2O_5:Eu^{2+}$ phosphor films.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.512-518
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• 2001

It has been well known that 6.5wt% Si steel sheets have excellent magnetic properties such as low core loss. high maximum permeability and low magnetostriction. In this work, we studied a method for producing 6.5wt% Si steel sheets using a chemical vapor deposition (CVD) method. The following is the procedure adopted in this work to produce 6.5wt% Si steel sheets; SiCl$_4$ gas is applied onto a low content-Si steel sheet placed in a tube furnace. Silicon atoms resulted from the decomposition of SiCl$_4$ are permeated through the surface of the steel sheet. Finally, by the diffusion process maintaining it under a high temperature the silicon atoms diffuse uniformly into the sheet. Through this process, 6.5wt% Si steel sheets can be obtained. The manufactured Fe-6.5wt% Si steel sheet with a thickness of 0.5mm exhibited a high frequency core loss (W$_{2}$1k/) of 8.92 W/kg. Its permeability increased from 37,100 to 53,300 at 1 tesular(T). The mechanical properties of the manufactured steel sheets were also estimated and the result showed that the workability was significantly improved by annealing in vacuum at 773k. Increased plastic deformation was also observed prior to fracture and the amount of grain boundary rupture was reduced.

• Journal of Korea Foundry Society
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• v.29 no.5
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• pp.225-232
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• 2009

For comprehensive understanding of the formation behavior of $\beta-Al_5FeSi$ phase in Al-Si-Cu alloys with the existence of Fe element, microstructure characterizations were performed using combined analysis of OM, SEM-EDS, XRD. Especially, experimental and predictive works on solidification events of $\beta-Al_5FeSi$ phase as well as other phases formed together with $\beta-Al_5FeSi$ have been carried out by using DSC analysis and Java-based Materials Properties software (J. Mat. Pro.). Primary and eutectic $\beta-Al_5FeSi$ phases were able to distinguish from each other on microstructures by their morphological features. Primary $\beta-Al_5FeSi$ phase was seen to have rough surface perpendicular to growth direction, indicating free attachment of solute atoms in liquid state. On the other hand, the eutectic $\beta-Al_5FeSi$ phase was formed with plain and straight surface during eutectic reaction together with $\alpha$-Al phase. The eutectic reaction of $\beta-Al_5FeSi$ and $\alpha$-Al phases was seen to be able to separate into each formation depending on cooling rate.

• Journal of Korea Foundry Society
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• v.32 no.5
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• pp.219-224
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• 2012

The effects of Mg and Si contents on the microstructure and mechanical properties in Al-Mg alloy (ALDC6) were investigated. The results showed that phase fraction and size of $Mg_2Si$ and $Al_{15}(Fe,Mn)_3Si_2$ phase in the microstructure of Al-Mg alloy were increased as the Mg and Si contents were raised from 2.5 to 3.5 wt%. With Si content of 1.5 wt%, freezing range of the alloy was significantly reduced and solidification became more complex during the final stage of solidification. While there was no significant influence of Mg contents on mechanical properties, Si contents up to 1.5 wt%, strongly affected the mechanical properties. Especially elongation was reduced by about a half with more than 1.0 wt%Si in the alloy. The bending and impact strength were decreased with increased amount of Si in the alloy, as well. The lowered mechanical properties are because of the growth of particle shaped coarse $Mg_2Si$ phase and precipitation of the needle like $\beta$-AlFeSi in the microstructure at the last region to solidify due to presence of excess amount of Si in the alloy.

• Korean Journal of Materials Research
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• v.10 no.8
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• pp.558-563
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• 2000

$Y_2SiO_5:Ce$ phosphor was coated with $In_2O_3$, $Al_2O_3$ and $SiO_2$ and then their cathodoluminance(CL)proper-ties required in field emission display were investigated. It was found that luminance efficiency and aging p개perty of $Y_2SiO_5:Ce$ phosphor was decreased with $In_2O_3$coating. For the case of coating, the luminance intensity was in blue phosphor was dramatically increased with $SiO_2$ coating. And also the aging property of $Y_2SiO_5:Ce$ Phosphor coated with $SiO_2$ was significantly improved compared to non-coated sample.

• Journal of the Korean Ceramic Society
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• v.29 no.9
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• pp.729-738
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• 1992

The glass formation and structural change with the glass compositions were investigated in the CaO-P2O5-SiO2 system with less than 40 wt% of P2O5. The glass formation range was determined by XRD, SEM and EDS techniques for water quenched specimens. The structural analyses were made for binary CaO-SiO2 glasses and ternary CaO-P2O5-SiO2 glasses by using FT-IR and Raman spectroscopy. The glass formation was affected by CaO/SiO2 mole ratio, P2O5 content and primary crystalline phase. The stable glass formation range was found when the transformed CaO/SiO2 mole ratio (new factor derived from structural changes) was in the range of 0.72~1.15 with less than 10 mol% of P2O5. The structural analyses of CaO-SiO2 glasses indicated that as the CaO/SiO2 ratio was increased, the nonbridging oxygens in the structural unit of the glasses were increased. With addition of P2O5 to CaO-SiO2 glasses, the P2O5 enhanced the polymerization of [SiO4] tetrahedra unit in CaO-SiO2 glasses, which contained a large portion of nonbridging oxygen. The phosphate eliminated nonbridging oxygens from silicate species, forcing polymerization of silicate structures and produced in [PO4] monomer in glasses. When added P2O5 was kept constant, the structural change with various CaO/SiO2 ratio was very similar to that of CaO-SiO2 glasses.

• Korean Chemical Engineering Research
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• v.53 no.2
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• pp.247-252
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• 2015

ZSM-5 crystals grew on the surface of ${\alpha}$-SiC and ${\beta}$-SiC particles by hydrothermal synthesis method. SiC particles which were > $50{\mu}m$ of size were used, and oxide layer were developed on the surface of the particles to induce growth of ZSM-5 from the surface. Then, synthesis time and temperature condition were considered growing ZSM-5. In this study, oxide layer was formed on ${\beta}$-SiC at $900^{\circ}C$ in air, and it was controlled to grow ZSM-5 grew from the ${\beta}$-SiC surface with $150^{\circ}C$ synthesis condition. This is due to Si-O-Si or Si-O-Al bond, which is basic framework of ZSM-5 can be easily formed, from the silicon oxide film on the surface of ${\beta}$-SiC. When the synthesis temperature was $200^{\circ}C$, the size of ZSM-5 was increased, and it covered much area of the SiC surface with better crystal shapes with longer synthesis time.