• 한국세라믹학회지
• /
• 제35권11호
• /
• pp.1190-1196
• /
• 1998

Ultrafine ${\beta}$-SiC powders were synthesized by the vapor phase reaction of TMS[Si(CH3)4] in hydrogen The reaction temperature and TMS concentration were varied from 1000 to 1400$^{\circ}C$ and from 1 to 10% respectively. The average particle size and phase of the powders were analyzed by TEM and XRD. Ultrafine ${\beta}$-SiC powders were synthesized above 1000$^{\circ}C$ and the crystallinity of the powders increased with increasing reaction temperature. Shape of the particles were spherical and had average size of about 20 nm which showed no difference as the reaction temperature and TMS concentration increased. From the FT-IR analysis the absorption bands of Si-C of the powders shifted to higher wavenumber as the reaction temperature increased,. Under the condition of total gas flow above 1500cc/min ${\beta}$-SiC and poly-Si powders were obtained simultaneously. The Si-O bond intensity was increased under the condition of total gas flow rate above 1000cc/min which might be due to oxidation formed on poly-Si.

• 한국세라믹학회지
• /
• 제23권1호
• /
• pp.67-73
• /
• 1986

SiC and $SiC-Si_3N_4$ powder were synthesized via the carbiding and carbiding-nitriding reaction of Jecheon quartz respectively using graphite as a reducing agent. $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ composite was obtained by the carbiding-nitriding reaction of Jecheon quartz-graphite mixture at 1, 35$0^{\circ}C$ in $H_2$ atmosphere. $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ composite was obtained by the carbidint-nitriding reaction of Jecheon quartz-graphite mixture at 1, 35$0^{\circ}C$ in $N_2-H_2$ atmosphere. The ratio of $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ content in a produced composite could be controlled by adjusting the reaction time and gaseous mixture.

• 한국세라믹학회지
• /
• 제47권6호
• /
• pp.572-577
• /
• 2010

Reaction-bonded $Si_3N_4$ has cost-reduction merit because inexpensive silicon powder was used as a start material. But its density was not so high enough to be used for structural materials. So the sintered reaction-bonded $Si_3N_4$techniques were developed to solve the low density problem. In this study the sintered reaction-bonded $Si_3N_4$ manufacturing method by using polymer precursor which recently attained significant interest owing to the good shaping and processing ability was proposed. The formations, properties of reaction-bonded $Si_3N_4$ from silicon and polysilazane mixture were investigated. High density reaction-bonded $Si_3N_4$ was manufactured from silicon and silicon-containing preceramic polymers and post-sintering technique. The mixtures of silicon powder and polysilazane were prepared and reaction sintered in $N_2$ atmosphere at $1350^{\circ}C$ and post-sintered at 1600~$1950^{\circ}C$. Density and phase were analyzed and correlated to the resulting material properties.

• International Journal of Ocean Engineering and Technology Speciallssue:Selected Papers
• /
• 제3권1호
• /
• pp.35-39
• /
• 2000

The present study dealt with the relationships among the interfacial shear strength, the thickness of interfacial reaction layer and the impact value of $Nb/MoSi_2$ laminate composites. In addition, the tensile test was conducted to evaluate the fracture strain of $Nb/MoSi_2$ laminate composites. To change the thickness of the reaction layer, $Nb/MoSi_2$ laminate composites alternating sintered MoSi2 layers and Nb foils were fabricated as the parameter of hot press temperature. It has been found that the growth of the reaction layer increases the interfacial shear strength and decreases the impact value by localizing a plastic deformation of Nb foil. There also exist appropriate shear strength and the thickness of the reaction layer, which are capable of maximizing the fracture energy of $Nb/MoSi_2$.

• 한국분말재료학회지
• /
• 제6권1호
• /
• pp.18-35
• /
• 1999

Phase equilibria in the system Si3N4-TiC-TiCxN1-x-C-N were determined by thermodynamic calculations (CALPHAD-method). The reaction peaction paths for Si3N4-TiC and SiC-TiC composites in the Ti-Si-C-n system were simulated at I bar N2-pressure and varying terpreatures. At a temperature of 1923 K two tie-triangles (TiC0.34N0.66+SiC+C and TiC0.13N0.87+SiC+Si3N4) and two 2-phase fieds (TiCxN1-x+SiC; 0.13

• 한국복합재료학회:학술대회논문집
• /
• 한국복합재료학회 2000년도 춘계학술발표대회 논문집
• /
• pp.109-115
• /
• 2000

In the present study, (10%$Al_2O_3$+5%Si)/AZ91 Mg hybrid composite was fabricated using the squeeze casting method. During squeeze casting, molten Mg was infiltrated into the preform of 10%$Al_2O_3$+5%Si and reaction product of $Mg_2Si$ intermetallic compound was formed by the reaction between molten Mg and Si powder. Microstructure has been observed and mechanical properties were evaluated for the reaction squeeze cast (RSC) hybrid composite. It was found that Si powder totally reacted with molten Mg to form $Mg_2Si$. Reinforcement ($Al_2O_3$) and the reaction product ($Mg_2Si$) are fairly uniformly distributed in Mg matrix for the squeeze cast hybrid composite. Mechanical properties were improved with hybridization of reinforcements, namely higher hardness and enhanced wear resistance comparing squeeze cast (15%$Al_2O_3$)/AZ91 Mg composite.

• 한국결정학회지
• /
• 제9권1호
• /
• pp.44-47
• /
• 1998

가정용 2.45GHz 마이크로파 오븐을 사용하여 A1 금속분말과 SiO2 분말간에 SHS방법에 의하여 산화/환원 반응을 통한 Al2O3 분말과 Si분말간의 복합체를 얻을 수 있었다. 분말간의 반응을 일으키기 위한 온도까지 승온시키기 위하여는 SiC 분말을 susceptor로 이용한 마이크로파 복합가열(Microwave Hybrid Heating)방법을 사용하여 분당 100℃의 승온 속도로 가열하였으며 반응은 850℃ 근처에서 일어났으며 가열 속도는 반응이 시작되면서 분당 200℃ 이상의 온도상승이 일어나면서 원하는 반응을 얻을 수 있었다.

• 한국세라믹학회지
• /
• 제37권1호
• /
• pp.44-49
• /
• 2000

Silicon nitride powders, were synthesized by the vapor phase reaction using SiH4-NH3 gaseous mixture. The reaction temperature, ratio of NH3 to SiH4 gas and the overall gas quantity were varied. The synthesized powders were characterized using X-ray, TEM, FT-IR and EA. The synthesized silicon nitride powders were in amorphous state, and the average particle size was about 100nm. TEM analysis revealed that the particle size decreased with increasing reaction temperature and gas flow quantity. As-received amorphous powders were annealed in nitrogen atmosphere at 140$0^{\circ}C$ for 2h, then the powders were completely crystallized at 0.2 ratio of NH3 to SiH4.

• 대한전자공학회논문지SD
• /
• 제43권2호
• /
• pp.13-17
• /
• 2006

Pentacene channel PTFT(organic thin film transistor)을 SiOC 절연박막 위에서 thermal evaporation 방법을 이용하여 성장시켰다. CVD 방법으로 증착시킨 SiOC 절연막은 조성비에 따라 특성이 달라지므로 절연막 위에서의 펜타센의 화학적 반응을 조사하기 위해서 inorganic-type인 $O_2/(BTMSM+O_2)=0.5$의 비율을 갖는 SiOC 박막을 사용하였다. 펜타센 분자의 말단에서 SiOC 표면에서 Diels-Alder 반응에 의한 이중결합이 깨어지면서 안정된 성장을 하지만 온도가 높아감에 따라 표면에서의 $SN_2(bimolecular nucleophilic substitution)$ 반응과 연쇄적인 화학반응에 의해 .펜타센의 성장을 방해하는 것으로 나타났다.

• 한국세라믹학회지
• /
• 제25권5호
• /
• pp.473-478
• /
• 1988

In order to obtain the high purity $\beta$-SiC powder that possesses the excellent sinterability and is close to the spherical shape, the carbon black was mixed into the composition of Si(OC2H5)4-H2O-NH3-C2H5OH which the monodispersed spherical fine particles is formed the hydrolysis of Ethylsilicate and the mixture was carbonized under an argon atmosphere. Particle shpae, size and the yield of $\beta$-SiC powder were investigated according to the molar ratio of carbon/alkoxide and variations of reaction temperature and reaction time. The results of this study are as follow ; 1) The yield of $\beta$-SiC gained from the reaction for one hour at 150$0^{\circ}C$ almost got near 100% and the particle size of $\beta$-SiC from the reaction for 15 hrs at 150$0^{\circ}C$ was 0.2${\mu}{\textrm}{m}$ on the average and close to the spherical shape agglomerate state. 2) When the molar ratio carbon/alkoxide is over 3.1 and the reaction occurs at 145$0^{\circ}C$ for 5hrs, the carbon content has not an effect on the kind of crystal of product.