• 한국세라믹학회지
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• 제31권4호
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• pp.399-406
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• 1994

The SiC/MoSi2 composite material was prepared by infiltration with the mixture of metal Si and MoSi2 into the preform of $\alpha$-SiC and graphite under the vacuum atmosphere of 10-1 torr. The mechanical properties, phases and microstructural characteristics have been investigated by employing an universal testing machine, scanning electron microscope and X-ray diffractometer. With the increase of MoSi2/Si mixing content, the quantity of the residual silicon phase was decreased and the hardness and fracture toughness of composite materials were increased. Also, as the infiltration temperature increased, a lot of fine-grained $\beta$-SiC phases, which were produced from the reaction of graphite and liquid silicon melt, were transformed to $\alpha$-SiC phases.

• 한국표면공학회지
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• 제29권5호
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• pp.407-414
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• 1996

We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the $O_2$ adsorption by terminating dangling bonds with H atoms. Moreover, the existence of Si-H bonds on Si(100) surfaces enhances the structural relaxation of Si-O-Si bonds due to a charge transfer from Si-Si back bonds. In the heteroepitaxial growth of a Si/Ge/Si(100) system, H atoms suppress the segregation of Ge atoms into Si overlayers since the exchange of Ge atoms with Si atoms bound with H must be accompanied with breaking of Si-H bonds. However, 3-dimensional island growth is also promoted by atomic H irradiation, which is considered to result from the suppression of surface migration of adsorbed reaction species and from the lowering of step energies by the H termination of dangling bonds.

• 한국세라믹학회지
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• 제32권4호
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• pp.429-435
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• 1995

Al2O3-SiC-C(ASC) refractory materials were prepared from kaolin using thermit reaction. The mixed powder (A-K) for the thermit reaction was composed of Hadong kaolin, C(graphite) and Al. A-S(SiO2＋C＋Al) composition was also employed to compare with A-K in respect to reactability. As a result of XRD patterns of A-K sample after thermit reaction, and firing at 140$0^{\circ}C$ for 3hrs in Ar atmosphere, it was possible to use as a ASC refractory materials.

• 한국세라믹학회지
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• 제43권6호
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• pp.376-382
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• 2006

In the $Al(OH)_3-SiO_2-AlF_3$ system, leaf-shaped fluorotopaz was first formed at $800^{\circ}C$ and mullite whisker was formed at $1,100^{\circ}C$. The mass transportation of Al and Si as gas phase, the fast reaction and growth, and the absence of liquid phase existence in mullite whisker showed that the formation and growth of mullite was from the solid-vapor reaction.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2004년도 추계학술대회
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• pp.280-283
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• 2004

Effect of H2 spillover rate as function of reduction temperature on reaction kinetics was evaluated. Reaction kinetics including yield, conversion, activation energy and selectivity of 1-butene isomerization over Pt/HxMoO/SiO were measured as reaction temperature was increased. While conversion of 1-butane was decreased, yield of iso-butene was increased. Two kinds of reaction mechanism were proposed from the change of selectivity as function of temperature.

• 한국세라믹학회지
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• 제40권9호
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• pp.891-896
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• 2003

IGCC 발전 시스템에 사용되는 고온 가스 필터에 대하여 용융 Si 침윤공정 방법을 사용한 고강도 반응소결 탄화규소 고온 가스 필터 제조 공정이 개발되었다. 용융 Si 침윤 반응으로 제조된 반응소결 탄화규소의 상온 및 고온 파괴강도는 약 50-123, 60-66 MPa이었으며, 반응소결 탄화규소 다공체의 평균기공크기 및 기공율의 범위는 각각 60- 70 $\mu\textrm{m}$ 및 약 34 vol%이었다. 용융 Si 침윤 방법으로 제조된 반응 소결 탄화 규소 다공체에서는 SiC 입자 사이에 SiC/Si으로 이루어진 기지 상이 형성되어 고온 파괴 강도가 점토 결합 탄화 규소 다공체보다 우수하였다. 소결된 지지층 위에 Si 분말이 첨가되지 않은 slurry를 사용하여 여과층을 제조하였다. 여과층에 사용된 Sic 입자의 크기가 10$\mu\textrm{m}$에서 34 $\mu\textrm{m}$로 증가됨에 따라 SiC 입자 사이에 형성된 기지상의 두께가 증가하였다. 분진이 포함된 유체의 face velocity 변화에 따른 압손의 관계는 US filter사 Schumacher type 20 filter의 기체 유동 특성과 비슷하게 나타났으며, 분진여과 측정시 4분 내에 누출 분진의 크기가 1 $\mu\textrm{m}$ 크기 이하로 감소되었다.

• 한국결정성장학회지
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• 제1권1호
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• pp.92-99
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• 1991

$Si(OC_2H_5)_4$ 로부터 $SiO_24$ 미립자를 얻는 반응은 가수분해반응과 종합반응의 두 단계로 이루어지며 중합반응은 $Si(OC_2H_5)_4$의 농도에 대하여 1차 반응이었다. 중합반응의 반응속도상수는 물의 농도와 촉매의 농도가 증가할수록 그리고 반응온도가 높아질수록 커지는 경향을 나타내고 있다. 생성된 실리카의 직경은 $0.06-0.27\mu\textrm{m}$이었으며 직경은 $Si(OC2H5)4$의 초기농도가 작아질수록 온도가 시간에 따라 입자가 성장해가는 속도는 전화율의 함수로 d=a.ln(Xa)+b 의 형태로 나타낼 수 있으며 최종 실리카의 직경은 사수 b값에 접근하였다.

• 한국분말재료학회지
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• 제12권4호
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• pp.273-278
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• 2005

Nanostructured TiN/$TiB_2$/$TiSi_2$ and TiN/$TiB_2$/$Ti_5Si_2$ composite powders have been prepared by mechanochemical reaction from mixtures of Ti, BN, and $Si_3N_4$ powders. The raw materials have reacted to form a uniform mixture of TiN, $TiB_2$ and $TiSi_2$ or $Ti_5Si_3$ depending on the amount of $Si_3N_4$ used in the starting mixtures, and the reaction proceeded through so-called mechanically activated self-sustaining reaction (MSR). Fine TiN and $TiB_2$ crystallites less than a few tens of nanometer were homogeneously dispersed in the amorphous $TiSi_2$ or $Ti_5Si_3$ matrix after milling for 12 hours. These amorphous matrices became crystalline phases after annealing at high temperatures as expected, but the original microstructure did not change significantly.

• 에너지공학
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• 제5권1호
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• pp.65-71
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• 1996

Ni-Cu를 SiO$_2$에 담지시켜 공간속도(Space Velocity; S.V), 메탄올 분압, 반응온도 및 Ni-Cu 조성비에 따른 메탄올 분해 반응의 활성을 조사하였다. S.V는 10,000~30,000h$^{-1}$, 반응온도는 150~40$0^{\circ}C$까지 변화시켰으며 Cu/(Ni＋Cu)비는 0, 0.25, 0.5, 0.75, 1로 변화시켜 보았다. Ni 단일 촉매의 경우 온도가 상승하면서 전환율이 100%에 도달함에 따라 CO의 선택도가 급감소하는 반면 Ni에 Cu를 첨가함으로써 높은 선택도를 유지하였다. 반응의 주생성물로서 CO와 H$_2$가 생성되었고 $CO_2$와 CH$_4$가 부생성물로서 주로 생성되었다.

• Bulletin of the Korean Chemical Society
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• 제28권4호
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• pp.529-532
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• 2007

Combined temperature programmed reaction (TPR) and infrared (IR) spectroscopic studies for Fischer- Tropsch reaction have been performed over Ru/SiO2 and Ru-Ag/SiO2 supported catalysts. Reaction of linearly absorbed CO with hydrogen starts at 375 K over Ru/SiO2 catalyst and reaches maximum at 420 K accompanied with an intensity decrease of linear CO absorption. The reaction with bridged absorbed CO peaks around 510-535 K. Addition of Ag yields mixed Ru-Ag bimetallic sites while it suppresses the formation of bridged bonded CO. Formation of methane on this modified surface occurs at 390 K and reaches maximum at 444 K. Suppression of hydrogen on the Ag-doped surface also occurs resulting in the formation of unsaturated hydrocarbons and of CHx intermediates not observed with Ru/SiO2 catalyst. Such intermediates are believed to be the building blocks of higher hydrocarbons during the Fischer-Tropsch synthesis. Linearly absorbed CO is found to be more reactive as compared to bridged CO. The Ag-modified surface also produces CO2 and carbon. On this surface, hydrogenation of CO begins at 390 K and reaches maximum at 494 K. The high temperature for hydrogenation of absorbed CO and C over Ru-Ag/SiO2 catalyst as compared to Ru/SiO2 catalyst is due to the formation of Ru-Ag bimetallic surfaces impeding hydrogen adsorption.